Fabrication of a sharp Si protrusion with a faceted apex grown from a surface-melted silicon wafer under high electric and magnetic fields: application to field emission electron sources

A silicon (Si) protrusion, grown on a narrow path of a Si(001) wafer by surface melting via resistive heating, was sharpened by applying a local high electric field under a magnetic field during the growth. The electric field caused local stress to the surface-melted Si, which was pulled upward alon...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2024-06, Vol.63 (6), p.065505
Hauptverfasser:	Nishimura, Takashi, Tomitori, Masahiko
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric fields Electric potential Electron sources electrostatic stress faceted apex Field emission field emission electron source Magnetic fields Silicon Solidification surface melt growth Voltage
Online-Zugang:	Volltext
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