Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

High-quality III–V quantum structures, advanced epitaxial technologies, and characterization methods are essential to drive the development of infrared optoelectronic materials and devices. As an important component of type II superlattices, InAs/InxGa1−xAsySb1−y would play an important role in the...

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Veröffentlicht in:	Applied physics letters 2024-06, Vol.124 (25)
Hauptverfasser:	Shi, Chao, Wang, Dengkui, Li, Weijie, Fang, Xuan, Zhang, Bin, Wang, Dongbo, Hao, Yu, Fang, Dan, Zhao, Hongbin, Du, Peng, Li, Jinhua
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier lifetime Columns (structural) Imaging techniques Indium arsenides Infrared detectors Minority carriers Optical properties Optoelectronic devices Quantum phenomena Quaternary alloys Superlattices Ternary alloys Thickness
Online-Zugang:	Volltext
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