Study of optical properties of porous silicon by DFT, comparison to experimental and effective medium approximation methods
In this study, the optical properties of porous silicon (PSi), such as the dielectric function, absorption coefficient, bandgap, reflectivity and refractive index, were studied as a function of porosities ranging from 3% to about 40% by using a supercell model in an ab-initio pseudo-potential plane...
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description | In this study, the optical properties of porous silicon (PSi), such as the dielectric function, absorption coefficient, bandgap, reflectivity and refractive index, were studied as a function of porosities ranging from 3% to about 40% by using a supercell model in an
ab-initio
pseudo-potential plane wave (PP-PW) method based on density functional theory (DFT). To validate these theoretical results, various PSi samples were prepared by varying the etching parameters to achieve similar porosities. The PSi samples were subjected to UV–vis spectrophotometry in order to measure their reflectivity. The refractive indexes predicted by DFT were compared to those obtained by the Fresnel equation and the effective medium approximation methods (EMA), particularly Bruggeman’s, Looyenga’s and del Rio's model (dRZW). These studies showed that the PSi dielectric constant decreases with increasing porosity, which is consistent with a decrease in the refractive index. In addition, as the porosity of PSi rises, the bandgap energy values increase, which is closely related to the decrease in the refractive index. For low porosity, DFT and Looyenga refractive indexes fit better than dRZW or Bruggeman. Furthermore, when the porosity is increased, DFT gives similar results as dRZW and is better than the Bruggeman method. Moreover, at medium porosity (28 or 40%), DFT and EMA models agree well with the experimental refractive indexes of PSi. |
doi_str_mv | 10.1007/s12034-024-03189-1 |
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ab-initio
pseudo-potential plane wave (PP-PW) method based on density functional theory (DFT). To validate these theoretical results, various PSi samples were prepared by varying the etching parameters to achieve similar porosities. The PSi samples were subjected to UV–vis spectrophotometry in order to measure their reflectivity. The refractive indexes predicted by DFT were compared to those obtained by the Fresnel equation and the effective medium approximation methods (EMA), particularly Bruggeman’s, Looyenga’s and del Rio's model (dRZW). These studies showed that the PSi dielectric constant decreases with increasing porosity, which is consistent with a decrease in the refractive index. In addition, as the porosity of PSi rises, the bandgap energy values increase, which is closely related to the decrease in the refractive index. For low porosity, DFT and Looyenga refractive indexes fit better than dRZW or Bruggeman. Furthermore, when the porosity is increased, DFT gives similar results as dRZW and is better than the Bruggeman method. Moreover, at medium porosity (28 or 40%), DFT and EMA models agree well with the experimental refractive indexes of PSi.</description><identifier>ISSN: 0973-7669</identifier><identifier>ISSN: 0250-4707</identifier><identifier>EISSN: 0973-7669</identifier><identifier>DOI: 10.1007/s12034-024-03189-1</identifier><language>eng</language><publisher>Bangalore: Indian Academy of Sciences</publisher><subject>Absorptivity ; Approximation ; Chemistry and Materials Science ; Density functional theory ; Effective medium theory ; Energy gap ; Energy value ; Engineering ; Etching ; Materials Science ; Morphology ; Optical properties ; Plane waves ; Porosity ; Porous silicon ; Reflectance ; Refractivity ; Silicon wafers ; Simulation ; Spectrophotometry</subject><ispartof>Bulletin of materials science, 2024-06, Vol.47 (3), p.128, Article 128</ispartof><rights>Indian Academy of Sciences 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c200t-fdc17c906b827c51be65d2f7db05e4adda6c8b1d58a2fa3876a71eaa400e68373</cites><orcidid>0000-0001-9685-7495</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12034-024-03189-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12034-024-03189-1$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,781,785,27929,27930,41493,42562,51324</link.rule.ids></links><search><creatorcontrib>Lachenani, H</creatorcontrib><creatorcontrib>Ouir, S</creatorcontrib><creatorcontrib>Boudeffar, F</creatorcontrib><creatorcontrib>Achacha, S</creatorcontrib><creatorcontrib>Menari, H</creatorcontrib><creatorcontrib>Krea, M</creatorcontrib><creatorcontrib>Gabouze, N</creatorcontrib><title>Study of optical properties of porous silicon by DFT, comparison to experimental and effective medium approximation methods</title><title>Bulletin of materials science</title><addtitle>Bull Mater Sci</addtitle><description>In this study, the optical properties of porous silicon (PSi), such as the dielectric function, absorption coefficient, bandgap, reflectivity and refractive index, were studied as a function of porosities ranging from 3% to about 40% by using a supercell model in an
ab-initio
pseudo-potential plane wave (PP-PW) method based on density functional theory (DFT). To validate these theoretical results, various PSi samples were prepared by varying the etching parameters to achieve similar porosities. The PSi samples were subjected to UV–vis spectrophotometry in order to measure their reflectivity. The refractive indexes predicted by DFT were compared to those obtained by the Fresnel equation and the effective medium approximation methods (EMA), particularly Bruggeman’s, Looyenga’s and del Rio's model (dRZW). These studies showed that the PSi dielectric constant decreases with increasing porosity, which is consistent with a decrease in the refractive index. In addition, as the porosity of PSi rises, the bandgap energy values increase, which is closely related to the decrease in the refractive index. For low porosity, DFT and Looyenga refractive indexes fit better than dRZW or Bruggeman. Furthermore, when the porosity is increased, DFT gives similar results as dRZW and is better than the Bruggeman method. Moreover, at medium porosity (28 or 40%), DFT and EMA models agree well with the experimental refractive indexes of PSi.</description><subject>Absorptivity</subject><subject>Approximation</subject><subject>Chemistry and Materials Science</subject><subject>Density functional theory</subject><subject>Effective medium theory</subject><subject>Energy gap</subject><subject>Energy value</subject><subject>Engineering</subject><subject>Etching</subject><subject>Materials Science</subject><subject>Morphology</subject><subject>Optical properties</subject><subject>Plane waves</subject><subject>Porosity</subject><subject>Porous silicon</subject><subject>Reflectance</subject><subject>Refractivity</subject><subject>Silicon wafers</subject><subject>Simulation</subject><subject>Spectrophotometry</subject><issn>0973-7669</issn><issn>0250-4707</issn><issn>0973-7669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KAzEUhQdRsFZfwFXAraM385PMLKVaFQourOuQSe5oSmcyJhlp8eVNraArFyHhcL5zb06SnFO4ogD82tMM8iKFLJ6cVnVKD5IJ1DxPOWP14Z_3cXLi_QqA1kVBJ8nncxj1ltiW2CEYJddkcHZAFwz6nTpYZ0dPvFkbZXvSbMntfHlJlO0G6YyPUrAEN5EwHfYh8rLXBNsWVTAfSDrUZuyIHGLsxnQymIh0GN6s9qfJUSvXHs9-7mnyMr9bzh7SxdP94-xmkaoMIKStVpSrGlhTZVyVtEFW6qzluoESC6m1ZKpqqC4rmbUyrziTnKKUBQCyKuf5NLnY58Yd3kf0Qazs6Po4UuTAeMkyKHaubO9SznrvsBVD_JN0W0FB7EoW-5JFLFl8lyxohPI95KO5f0X3G_0P9QWE6IJa</recordid><startdate>20240614</startdate><enddate>20240614</enddate><creator>Lachenani, H</creator><creator>Ouir, S</creator><creator>Boudeffar, F</creator><creator>Achacha, S</creator><creator>Menari, H</creator><creator>Krea, M</creator><creator>Gabouze, N</creator><general>Indian Academy of Sciences</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0001-9685-7495</orcidid></search><sort><creationdate>20240614</creationdate><title>Study of optical properties of porous silicon by DFT, comparison to experimental and effective medium approximation methods</title><author>Lachenani, H ; Ouir, S ; Boudeffar, F ; Achacha, S ; Menari, H ; Krea, M ; Gabouze, N</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c200t-fdc17c906b827c51be65d2f7db05e4adda6c8b1d58a2fa3876a71eaa400e68373</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Absorptivity</topic><topic>Approximation</topic><topic>Chemistry and Materials Science</topic><topic>Density functional theory</topic><topic>Effective medium theory</topic><topic>Energy gap</topic><topic>Energy value</topic><topic>Engineering</topic><topic>Etching</topic><topic>Materials Science</topic><topic>Morphology</topic><topic>Optical properties</topic><topic>Plane waves</topic><topic>Porosity</topic><topic>Porous silicon</topic><topic>Reflectance</topic><topic>Refractivity</topic><topic>Silicon wafers</topic><topic>Simulation</topic><topic>Spectrophotometry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lachenani, H</creatorcontrib><creatorcontrib>Ouir, S</creatorcontrib><creatorcontrib>Boudeffar, F</creatorcontrib><creatorcontrib>Achacha, S</creatorcontrib><creatorcontrib>Menari, H</creatorcontrib><creatorcontrib>Krea, M</creatorcontrib><creatorcontrib>Gabouze, N</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Bulletin of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lachenani, H</au><au>Ouir, S</au><au>Boudeffar, F</au><au>Achacha, S</au><au>Menari, H</au><au>Krea, M</au><au>Gabouze, N</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of optical properties of porous silicon by DFT, comparison to experimental and effective medium approximation methods</atitle><jtitle>Bulletin of materials science</jtitle><stitle>Bull Mater Sci</stitle><date>2024-06-14</date><risdate>2024</risdate><volume>47</volume><issue>3</issue><spage>128</spage><pages>128-</pages><artnum>128</artnum><issn>0973-7669</issn><issn>0250-4707</issn><eissn>0973-7669</eissn><abstract>In this study, the optical properties of porous silicon (PSi), such as the dielectric function, absorption coefficient, bandgap, reflectivity and refractive index, were studied as a function of porosities ranging from 3% to about 40% by using a supercell model in an
ab-initio
pseudo-potential plane wave (PP-PW) method based on density functional theory (DFT). To validate these theoretical results, various PSi samples were prepared by varying the etching parameters to achieve similar porosities. The PSi samples were subjected to UV–vis spectrophotometry in order to measure their reflectivity. The refractive indexes predicted by DFT were compared to those obtained by the Fresnel equation and the effective medium approximation methods (EMA), particularly Bruggeman’s, Looyenga’s and del Rio's model (dRZW). These studies showed that the PSi dielectric constant decreases with increasing porosity, which is consistent with a decrease in the refractive index. In addition, as the porosity of PSi rises, the bandgap energy values increase, which is closely related to the decrease in the refractive index. For low porosity, DFT and Looyenga refractive indexes fit better than dRZW or Bruggeman. Furthermore, when the porosity is increased, DFT gives similar results as dRZW and is better than the Bruggeman method. Moreover, at medium porosity (28 or 40%), DFT and EMA models agree well with the experimental refractive indexes of PSi.</abstract><cop>Bangalore</cop><pub>Indian Academy of Sciences</pub><doi>10.1007/s12034-024-03189-1</doi><orcidid>https://orcid.org/0000-0001-9685-7495</orcidid></addata></record> |
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source | Indian Academy of Sciences; EZB-FREE-00999 freely available EZB journals; SpringerNature Journals; Free Full-Text Journals in Chemistry |
subjects | Absorptivity Approximation Chemistry and Materials Science Density functional theory Effective medium theory Energy gap Energy value Engineering Etching Materials Science Morphology Optical properties Plane waves Porosity Porous silicon Reflectance Refractivity Silicon wafers Simulation Spectrophotometry |
title | Study of optical properties of porous silicon by DFT, comparison to experimental and effective medium approximation methods |
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