Analysis of Negative Capacitance Source Pocket Double-Gate TFET with Steep Subthreshold and High ON–OFF Ratio

This article presents a study on the subthreshold swing (SS) and the ON–OFF current ratio of a negative capacitance source pocket double-gate tunnel field-effect transistor (NC-SP-DGTFET). In this analysis, a novel device is developed that integrates gate and channel engineering techniques. The comb...

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