Improvement of β-Ga2O3-based Schottky barrier UV photodetector by 4H-SiC substrate, intrinsic buffer layer, and graphene surface contact

This work presents a study of a β-Ga 2 O 3 -based Schottky barrier UV photodetector (SB UV-PD) with careful concern for material properties, device structure, and optimization techniques. The initial is IZTO/β-Ga 2 O 3 /ITO was calibrated with experimental measurement. The optimization process lies...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2024-06, Vol.35 (16), p.1047, Article 1047
Hauptverfasser:	Cherroun, Rima, Meftah, Afak, Sengouga, Nouredine, Labed, Madani, Kim, Hojoong, Rim, You Seung, Djemaa, Attafi, Meftah, Amjad
Format:	Artikel
Sprache:	eng
Schlagworte:	Buffer layers Characterization and Evaluation of Materials Chemistry and Materials Science Efficiency Electrons Gallium oxides Graphene Indium tin oxides Light Material properties Materials Science Optical and Electronic Materials Optimization Optimization techniques Parameters Photoelectric effect Photometers Photovoltaic cells Quantum efficiency Silicon carbide Silicon substrates Simulation Temperature Thin films Tin Transistors Work functions
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