A Study of the Effect of Quartz-to-Cristobalite Transformation on SiC Generation in Metallurgical-Grade Silicon Production
Silicon carbide (SiC) is an essential intermediate product formed during the smelting process of metallurgical-grade silicon (MG-Si), and its production efficiency is a key factor in determining the overall efficiency of MG-Si production. In this study, the effect of quartz-to-cristobalite transform...
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| description | Silicon carbide (SiC) is an essential intermediate product formed during the smelting process of metallurgical-grade silicon (MG-Si), and its production efficiency is a key factor in determining the overall efficiency of MG-Si production. In this study, the effect of quartz-to-cristobalite transformation on SiC generation in MG-Si production and elucidated the differences in the reaction characteristics of quartz and cristobalite when they interacted with carbonaceous reductants. The experimental results indicated that the rate of direct carbothermal reduction of cristobalite was 1.45 times that of quartz. Moreover, the indirectly formed SiC layer in the cristobalite/C diffusion couple exhibited a thickness of 920.87 μm, which was 1.55 times that in the quartz/C diffusion couple. Both the reaction thermodynamic calculations and crystal transformation theory analysis revealed that the changes in the chemical energy and crystal structure of SiO
2
during the phase transformation process reduced the stability of cristobalite compared with quartz at high temperatures. Consequently, cristobalite reacted more easily with C at high temperatures to form SiC and SiO. The results of the study are highly significant for improving the reaction mechanism in the smelting process of MG-Si and enhancing the production efficiency of MG-Si. |
| doi_str_mv | 10.1007/s12633-024-02908-x |
| format | Article |
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2
during the phase transformation process reduced the stability of cristobalite compared with quartz at high temperatures. Consequently, cristobalite reacted more easily with C at high temperatures to form SiC and SiO. The results of the study are highly significant for improving the reaction mechanism in the smelting process of MG-Si and enhancing the production efficiency of MG-Si.</description><identifier>ISSN: 1876-990X</identifier><identifier>EISSN: 1876-9918</identifier><identifier>DOI: 10.1007/s12633-024-02908-x</identifier><language>eng</language><publisher>Dordrecht: Springer Netherlands</publisher><subject>Chemical energy ; Chemistry ; Chemistry and Materials Science ; Cristobalite ; Crystal structure ; Diffusion layers ; Efficiency ; Environmental Chemistry ; High temperature ; Inorganic Chemistry ; Lasers ; Materials Science ; Metallurgical analysis ; Metallurgy ; Optical Devices ; Optics ; Phase transitions ; Photonics ; Polymer Sciences ; Quartz ; Reaction mechanisms ; Reducing agents ; Silicon carbide ; Silicon dioxide ; Smelting</subject><ispartof>SILICON, 2024, Vol.16 (7), p.3155-3164</ispartof><rights>The Author(s), under exclusive licence to Springer Nature B.V. 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c270t-81cee3087e6c858c2c72cc2a36cb8c8e30bb3c12cb9b0337741ea9d5115c0af63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12633-024-02908-x$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12633-024-02908-x$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,781,785,27925,27926,41489,42558,51320</link.rule.ids></links><search><creatorcontrib>Tian, Jiahe</creatorcontrib><creatorcontrib>Wei, Kuixian</creatorcontrib><creatorcontrib>Deng, Xiaocong</creatorcontrib><creatorcontrib>Ma, Wenhui</creatorcontrib><title>A Study of the Effect of Quartz-to-Cristobalite Transformation on SiC Generation in Metallurgical-Grade Silicon Production</title><title>SILICON</title><addtitle>Silicon</addtitle><description>Silicon carbide (SiC) is an essential intermediate product formed during the smelting process of metallurgical-grade silicon (MG-Si), and its production efficiency is a key factor in determining the overall efficiency of MG-Si production. In this study, the effect of quartz-to-cristobalite transformation on SiC generation in MG-Si production and elucidated the differences in the reaction characteristics of quartz and cristobalite when they interacted with carbonaceous reductants. The experimental results indicated that the rate of direct carbothermal reduction of cristobalite was 1.45 times that of quartz. Moreover, the indirectly formed SiC layer in the cristobalite/C diffusion couple exhibited a thickness of 920.87 μm, which was 1.55 times that in the quartz/C diffusion couple. Both the reaction thermodynamic calculations and crystal transformation theory analysis revealed that the changes in the chemical energy and crystal structure of SiO
2
during the phase transformation process reduced the stability of cristobalite compared with quartz at high temperatures. Consequently, cristobalite reacted more easily with C at high temperatures to form SiC and SiO. The results of the study are highly significant for improving the reaction mechanism in the smelting process of MG-Si and enhancing the production efficiency of MG-Si.</description><subject>Chemical energy</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Cristobalite</subject><subject>Crystal structure</subject><subject>Diffusion layers</subject><subject>Efficiency</subject><subject>Environmental Chemistry</subject><subject>High temperature</subject><subject>Inorganic Chemistry</subject><subject>Lasers</subject><subject>Materials Science</subject><subject>Metallurgical analysis</subject><subject>Metallurgy</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Phase transitions</subject><subject>Photonics</subject><subject>Polymer Sciences</subject><subject>Quartz</subject><subject>Reaction mechanisms</subject><subject>Reducing agents</subject><subject>Silicon carbide</subject><subject>Silicon dioxide</subject><subject>Smelting</subject><issn>1876-990X</issn><issn>1876-9918</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kN9LwzAQx4soOOb-AZ8CPkfzY23TxzHmFCYqm-BbSK_pzOiamaSw7a83s6JvHjmSu_t8L_BNkmtKbikh-Z2nLOMcEzaOWRCB92fJgIo8w0VBxfnvm7xfJiPvNyQGZ7nIikFynKBl6KoDsjUKHxrN6lpDOFWvnXLhiIPFU2d8sKVqTNBo5VTra-u2KhjboniWZormutWu75gWPemgmqZzawOqwXOnKh2pxkAcvzhbdXAir5KLWjVej37uYfJ2P1tNH_Dief44nSwwsJwELChozYnIdQYiFcAgZwBM8QxKASKOypIDZVAWJeE8z8dUq6JKKU2BqDrjw-Sm37tz9rPTPsiN7Vwbv5ScpEXBIjqOFOspcNZ7p2u5c2ar3EFSIk82y95mGW2W3zbLfRTxXuQj3K61-1v9j-oLzS2B7Q</recordid><startdate>2024</startdate><enddate>2024</enddate><creator>Tian, Jiahe</creator><creator>Wei, Kuixian</creator><creator>Deng, Xiaocong</creator><creator>Ma, Wenhui</creator><general>Springer Netherlands</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2024</creationdate><title>A Study of the Effect of Quartz-to-Cristobalite Transformation on SiC Generation in Metallurgical-Grade Silicon Production</title><author>Tian, Jiahe ; Wei, Kuixian ; Deng, Xiaocong ; Ma, Wenhui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c270t-81cee3087e6c858c2c72cc2a36cb8c8e30bb3c12cb9b0337741ea9d5115c0af63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Chemical energy</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Cristobalite</topic><topic>Crystal structure</topic><topic>Diffusion layers</topic><topic>Efficiency</topic><topic>Environmental Chemistry</topic><topic>High temperature</topic><topic>Inorganic Chemistry</topic><topic>Lasers</topic><topic>Materials Science</topic><topic>Metallurgical analysis</topic><topic>Metallurgy</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Phase transitions</topic><topic>Photonics</topic><topic>Polymer Sciences</topic><topic>Quartz</topic><topic>Reaction mechanisms</topic><topic>Reducing agents</topic><topic>Silicon carbide</topic><topic>Silicon dioxide</topic><topic>Smelting</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tian, Jiahe</creatorcontrib><creatorcontrib>Wei, Kuixian</creatorcontrib><creatorcontrib>Deng, Xiaocong</creatorcontrib><creatorcontrib>Ma, Wenhui</creatorcontrib><collection>CrossRef</collection><jtitle>SILICON</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tian, Jiahe</au><au>Wei, Kuixian</au><au>Deng, Xiaocong</au><au>Ma, Wenhui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Study of the Effect of Quartz-to-Cristobalite Transformation on SiC Generation in Metallurgical-Grade Silicon Production</atitle><jtitle>SILICON</jtitle><stitle>Silicon</stitle><date>2024</date><risdate>2024</risdate><volume>16</volume><issue>7</issue><spage>3155</spage><epage>3164</epage><pages>3155-3164</pages><issn>1876-990X</issn><eissn>1876-9918</eissn><abstract>Silicon carbide (SiC) is an essential intermediate product formed during the smelting process of metallurgical-grade silicon (MG-Si), and its production efficiency is a key factor in determining the overall efficiency of MG-Si production. In this study, the effect of quartz-to-cristobalite transformation on SiC generation in MG-Si production and elucidated the differences in the reaction characteristics of quartz and cristobalite when they interacted with carbonaceous reductants. The experimental results indicated that the rate of direct carbothermal reduction of cristobalite was 1.45 times that of quartz. Moreover, the indirectly formed SiC layer in the cristobalite/C diffusion couple exhibited a thickness of 920.87 μm, which was 1.55 times that in the quartz/C diffusion couple. Both the reaction thermodynamic calculations and crystal transformation theory analysis revealed that the changes in the chemical energy and crystal structure of SiO
2
during the phase transformation process reduced the stability of cristobalite compared with quartz at high temperatures. Consequently, cristobalite reacted more easily with C at high temperatures to form SiC and SiO. The results of the study are highly significant for improving the reaction mechanism in the smelting process of MG-Si and enhancing the production efficiency of MG-Si.</abstract><cop>Dordrecht</cop><pub>Springer Netherlands</pub><doi>10.1007/s12633-024-02908-x</doi><tpages>10</tpages></addata></record> |
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| subjects | Chemical energy Chemistry Chemistry and Materials Science Cristobalite Crystal structure Diffusion layers Efficiency Environmental Chemistry High temperature Inorganic Chemistry Lasers Materials Science Metallurgical analysis Metallurgy Optical Devices Optics Phase transitions Photonics Polymer Sciences Quartz Reaction mechanisms Reducing agents Silicon carbide Silicon dioxide Smelting |
| title | A Study of the Effect of Quartz-to-Cristobalite Transformation on SiC Generation in Metallurgical-Grade Silicon Production |
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