Analytical Model and Safe-Operation-Area Analysis of Bridge-Leg Crosstalk of GaN E-HEMT Considering Correlation Effect of Multi-Parameters

Wide band-gap field-effect power devices, such as gallium nitride (GaN) high electron mobility transistors are being widely used for a better system-level performance as a result of superior figure-of-merits in power-conversion application. But they could also suffer from more severe bridge-leg cros...

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