Effect of electrode materials and fabrication methods on resistive switching behavior of poly(3-hexylthiophene-2,5-diyl)-based resistive random access memory
We evaluated a simple and economical manufacturing method to fabricate a nonvolatile (NV) memory device, which is a fully vacuum-free solution-processed organic resistive random access memory (RRAM) device. A resistive switching (RS) layer was formed from poly(3-hexylthiophene-2,5-diyl), and top ele...
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| Veröffentlicht in: | Journal of the Korean Physical Society 2024-05, Vol.84 (10), p.766-771 |
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| creator | Nam, Ha Yeon Ha, Dong Hyeon Rahmani, Mehr Khalid Khan, Sobia Ali Park, Joong Hyeon Kang, Moon Hee |
| description | We evaluated a simple and economical manufacturing method to fabricate a nonvolatile (NV) memory device, which is a fully vacuum-free solution-processed organic resistive random access memory (RRAM) device. A resistive switching (RS) layer was formed from poly(3-hexylthiophene-2,5-diyl), and top electrodes were formed from solvent-treated poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) and Ag epoxy. For the comparison, organic RRAM with vacuum-evaporated Ag metal top electrode were also fabricated and evaluated the RS behavior depending on the top electrode materials. All the fully vacuum-free processed RRAM devices exhibited NV and bipolar RS behavior with the best ON/OFF ratio of > 10
3
and set voltage of ~ 1 V while the organic RRAM with vacuum-evaporated Ag electrode had the highest ON/OFF ratio > 10
5
and the lowest set voltage of 0.85 V. Although RS behavior of the fully vacuum-free processed RRAM was slightly inferior to the RRAM with vacuum-evaporated electrode, its inferior performance can be compensated from its merits of simple and low-cost fabrication. |
| doi_str_mv | 10.1007/s40042-024-01050-6 |
| format | Article |
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3
and set voltage of ~ 1 V while the organic RRAM with vacuum-evaporated Ag electrode had the highest ON/OFF ratio > 10
5
and the lowest set voltage of 0.85 V. Although RS behavior of the fully vacuum-free processed RRAM was slightly inferior to the RRAM with vacuum-evaporated electrode, its inferior performance can be compensated from its merits of simple and low-cost fabrication.</description><identifier>ISSN: 0374-4884</identifier><identifier>EISSN: 1976-8524</identifier><identifier>DOI: 10.1007/s40042-024-01050-6</identifier><language>eng</language><publisher>Seoul: The Korean Physical Society</publisher><subject>Electric potential ; Electrode materials ; Electrodes ; Evaporation ; Mathematical and Computational Physics ; Memory devices ; Original Article - Condensed Matter ; Particle and Nuclear Physics ; Physics ; Physics and Astronomy ; Production methods ; Random access memory ; Switching ; Theoretical ; Voltage</subject><ispartof>Journal of the Korean Physical Society, 2024-05, Vol.84 (10), p.766-771</ispartof><rights>The Korean Physical Society 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c270t-56f647bb6738b8a87ea16106d8810a4b61bd927c8342105fa42b987f8d2065a93</cites><orcidid>0000-0002-9485-2006</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s40042-024-01050-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s40042-024-01050-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Nam, Ha Yeon</creatorcontrib><creatorcontrib>Ha, Dong Hyeon</creatorcontrib><creatorcontrib>Rahmani, Mehr Khalid</creatorcontrib><creatorcontrib>Khan, Sobia Ali</creatorcontrib><creatorcontrib>Park, Joong Hyeon</creatorcontrib><creatorcontrib>Kang, Moon Hee</creatorcontrib><title>Effect of electrode materials and fabrication methods on resistive switching behavior of poly(3-hexylthiophene-2,5-diyl)-based resistive random access memory</title><title>Journal of the Korean Physical Society</title><addtitle>J. Korean Phys. Soc</addtitle><description>We evaluated a simple and economical manufacturing method to fabricate a nonvolatile (NV) memory device, which is a fully vacuum-free solution-processed organic resistive random access memory (RRAM) device. A resistive switching (RS) layer was formed from poly(3-hexylthiophene-2,5-diyl), and top electrodes were formed from solvent-treated poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) and Ag epoxy. For the comparison, organic RRAM with vacuum-evaporated Ag metal top electrode were also fabricated and evaluated the RS behavior depending on the top electrode materials. All the fully vacuum-free processed RRAM devices exhibited NV and bipolar RS behavior with the best ON/OFF ratio of > 10
3
and set voltage of ~ 1 V while the organic RRAM with vacuum-evaporated Ag electrode had the highest ON/OFF ratio > 10
5
and the lowest set voltage of 0.85 V. Although RS behavior of the fully vacuum-free processed RRAM was slightly inferior to the RRAM with vacuum-evaporated electrode, its inferior performance can be compensated from its merits of simple and low-cost fabrication.</description><subject>Electric potential</subject><subject>Electrode materials</subject><subject>Electrodes</subject><subject>Evaporation</subject><subject>Mathematical and Computational Physics</subject><subject>Memory devices</subject><subject>Original Article - Condensed Matter</subject><subject>Particle and Nuclear Physics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Production methods</subject><subject>Random access memory</subject><subject>Switching</subject><subject>Theoretical</subject><subject>Voltage</subject><issn>0374-4884</issn><issn>1976-8524</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kctu1TAQhiNUJE5bXoCVJTYgYTq-xPZZoqpcpEpsytqyk3HjKokPtlvIw_RdcTlIsGI1s_gvo_m67hWD9wxAXxQJIDkFLikw6IGqZ92O7bWipufypNuB0JJKY-SL7rSUu6YWQqtd93gVAg6VpEBwbktOI5LFVczRzYW4dSTB-RwHV2NayYJ1SmMhbc1YYqnxAUn5EeswxfWWeJzcQ0z5Ke6Q5u2NoBP-3OY6xXSYcEXK3_V0jNv8lnpXcPwnJbeutBA3DFhKK1pS3s6756GdgS__zLPu28erm8vP9Prrpy-XH67pwDVU2qugpPZeaWG8cUajY4qBGo1h4KRXzI97rgcjJG_fCU5yvzc6mJGD6t1enHWvj7mHnL7fY6n2Lt3ntVVaAX3fgzAgmoofVUNOpWQM9pDj4vJmGdgnDPaIwTYM9jcGq5pJHE2liddbzH-j_-P6BbVXjLg</recordid><startdate>20240501</startdate><enddate>20240501</enddate><creator>Nam, Ha Yeon</creator><creator>Ha, Dong Hyeon</creator><creator>Rahmani, Mehr Khalid</creator><creator>Khan, Sobia Ali</creator><creator>Park, Joong Hyeon</creator><creator>Kang, Moon Hee</creator><general>The Korean Physical Society</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-9485-2006</orcidid></search><sort><creationdate>20240501</creationdate><title>Effect of electrode materials and fabrication methods on resistive switching behavior of poly(3-hexylthiophene-2,5-diyl)-based resistive random access memory</title><author>Nam, Ha Yeon ; Ha, Dong Hyeon ; Rahmani, Mehr Khalid ; Khan, Sobia Ali ; Park, Joong Hyeon ; Kang, Moon Hee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c270t-56f647bb6738b8a87ea16106d8810a4b61bd927c8342105fa42b987f8d2065a93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Electric potential</topic><topic>Electrode materials</topic><topic>Electrodes</topic><topic>Evaporation</topic><topic>Mathematical and Computational Physics</topic><topic>Memory devices</topic><topic>Original Article - Condensed Matter</topic><topic>Particle and Nuclear Physics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Production methods</topic><topic>Random access memory</topic><topic>Switching</topic><topic>Theoretical</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nam, Ha Yeon</creatorcontrib><creatorcontrib>Ha, Dong Hyeon</creatorcontrib><creatorcontrib>Rahmani, Mehr Khalid</creatorcontrib><creatorcontrib>Khan, Sobia Ali</creatorcontrib><creatorcontrib>Park, Joong Hyeon</creatorcontrib><creatorcontrib>Kang, Moon Hee</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the Korean Physical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nam, Ha Yeon</au><au>Ha, Dong Hyeon</au><au>Rahmani, Mehr Khalid</au><au>Khan, Sobia Ali</au><au>Park, Joong Hyeon</au><au>Kang, Moon Hee</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of electrode materials and fabrication methods on resistive switching behavior of poly(3-hexylthiophene-2,5-diyl)-based resistive random access memory</atitle><jtitle>Journal of the Korean Physical Society</jtitle><stitle>J. Korean Phys. Soc</stitle><date>2024-05-01</date><risdate>2024</risdate><volume>84</volume><issue>10</issue><spage>766</spage><epage>771</epage><pages>766-771</pages><issn>0374-4884</issn><eissn>1976-8524</eissn><abstract>We evaluated a simple and economical manufacturing method to fabricate a nonvolatile (NV) memory device, which is a fully vacuum-free solution-processed organic resistive random access memory (RRAM) device. A resistive switching (RS) layer was formed from poly(3-hexylthiophene-2,5-diyl), and top electrodes were formed from solvent-treated poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) and Ag epoxy. For the comparison, organic RRAM with vacuum-evaporated Ag metal top electrode were also fabricated and evaluated the RS behavior depending on the top electrode materials. All the fully vacuum-free processed RRAM devices exhibited NV and bipolar RS behavior with the best ON/OFF ratio of > 10
3
and set voltage of ~ 1 V while the organic RRAM with vacuum-evaporated Ag electrode had the highest ON/OFF ratio > 10
5
and the lowest set voltage of 0.85 V. Although RS behavior of the fully vacuum-free processed RRAM was slightly inferior to the RRAM with vacuum-evaporated electrode, its inferior performance can be compensated from its merits of simple and low-cost fabrication.</abstract><cop>Seoul</cop><pub>The Korean Physical Society</pub><doi>10.1007/s40042-024-01050-6</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-9485-2006</orcidid></addata></record> |
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| subjects | Electric potential Electrode materials Electrodes Evaporation Mathematical and Computational Physics Memory devices Original Article - Condensed Matter Particle and Nuclear Physics Physics Physics and Astronomy Production methods Random access memory Switching Theoretical Voltage |
| title | Effect of electrode materials and fabrication methods on resistive switching behavior of poly(3-hexylthiophene-2,5-diyl)-based resistive random access memory |
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