Improving the performance parameters of organic field-effect transistors via alkyl chain length of boronic acid self-assembled monolayers
Interface modification is a promising technique for enhancing electrical parameters of Organic Field Effect Transistor (OFETs). In OFETs, self-assembled monolayer molecules are widely used for treatment dielectric/semiconductor interface layer. Modification of dielectric/semiconductor layer with SAM...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2024-05, Vol.35 (14), p.966, Article 966 |
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| creator | Yılmaz, Tuğbahan |
| description | Interface modification is a promising technique for enhancing electrical parameters of Organic Field Effect Transistor (OFETs). In OFETs, self-assembled monolayer molecules are widely used for treatment dielectric/semiconductor interface layer. Modification of dielectric/semiconductor layer with SAM molecules ensures a variety of potential applications. Boronic acids with four different alkyl chain lengths (
C
n
-BA; n
=
8, 10, 12, 14
) molecules were used in this study to treat the Al
2
O
3
dielectric surface in dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) based OFETs. Treated with SAMs improve the mobility of Al
2
O
3
surfaces for linear and saturation regime and threshold voltages shifted from positive direction. The morphological and electrical characterizations were performed for fabricated OFET. The results show that alkyl-boronic acids SAM molecules open a new perspective for further optoelectronic applications due to its application for oxide surfaces and controllability. |
| doi_str_mv | 10.1007/s10854-024-12720-3 |
| format | Article |
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C
n
-BA; n
=
8, 10, 12, 14
) molecules were used in this study to treat the Al
2
O
3
dielectric surface in dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) based OFETs. Treated with SAMs improve the mobility of Al
2
O
3
surfaces for linear and saturation regime and threshold voltages shifted from positive direction. The morphological and electrical characterizations were performed for fabricated OFET. The results show that alkyl-boronic acids SAM molecules open a new perspective for further optoelectronic applications due to its application for oxide surfaces and controllability.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-024-12720-3</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Acids ; Aluminum ; Aluminum oxide ; Boron ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Contact angle ; Dielectrics ; Field effect transistors ; Materials Science ; Measurement techniques ; Metal oxides ; Monolayers ; Morphology ; Optical and Electronic Materials ; Optoelectronics ; Parameter modification ; Self-assembled monolayers ; Self-assembly ; Semiconductor devices ; Thin films ; Threshold voltage ; Transistors</subject><ispartof>Journal of materials science. Materials in electronics, 2024-05, Vol.35 (14), p.966, Article 966</ispartof><rights>The Author(s) 2024</rights><rights>The Author(s) 2024. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c314t-1e71f3d2324baab225a8410dcde85cc5721eb1313e8fe347d326f3fe70438d0a3</cites><orcidid>0000-0001-8633-5845</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-024-12720-3$$EPDF$$P50$$Gspringer$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-024-12720-3$$EHTML$$P50$$Gspringer$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Yılmaz, Tuğbahan</creatorcontrib><title>Improving the performance parameters of organic field-effect transistors via alkyl chain length of boronic acid self-assembled monolayers</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Interface modification is a promising technique for enhancing electrical parameters of Organic Field Effect Transistor (OFETs). In OFETs, self-assembled monolayer molecules are widely used for treatment dielectric/semiconductor interface layer. Modification of dielectric/semiconductor layer with SAM molecules ensures a variety of potential applications. Boronic acids with four different alkyl chain lengths (
C
n
-BA; n
=
8, 10, 12, 14
) molecules were used in this study to treat the Al
2
O
3
dielectric surface in dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) based OFETs. Treated with SAMs improve the mobility of Al
2
O
3
surfaces for linear and saturation regime and threshold voltages shifted from positive direction. The morphological and electrical characterizations were performed for fabricated OFET. The results show that alkyl-boronic acids SAM molecules open a new perspective for further optoelectronic applications due to its application for oxide surfaces and controllability.</description><subject>Acids</subject><subject>Aluminum</subject><subject>Aluminum oxide</subject><subject>Boron</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Contact angle</subject><subject>Dielectrics</subject><subject>Field effect transistors</subject><subject>Materials Science</subject><subject>Measurement techniques</subject><subject>Metal oxides</subject><subject>Monolayers</subject><subject>Morphology</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronics</subject><subject>Parameter modification</subject><subject>Self-assembled monolayers</subject><subject>Self-assembly</subject><subject>Semiconductor devices</subject><subject>Thin films</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNp9kMFOHDEQRC2USGwIP8DJUs5ObLeNh2OEIEFC4kKk3KweT3t3YMZe7AFpP4G_xpuNxI1T96FelaoYO1Pyu5LS_ahKdtYIqY1Q2mkp4IitlHUgTKf_fmIreWGdMFbrY_al1gcp5bmBbsVeb-ZtyS9jWvNlQ3xLJeYyYwrtx4IzLVQqz5HnssY0Bh5HmgZBMVJY-FIw1bEuuWleRuQ4Pe4mHjY4Jj5RWi-bPdrnkvcohnHglaYosFaa-4kGPueUJ9y1kK_sc8Sp0un_e8L-XF_dX_4Wt3e_bi5_3ooAyixCkVMRBg3a9Ii91hY7o-QQBupsCNZpRb0CBdRFAuMG0OcRIjnZ-g4S4YR9O_i23k_PVBf_kJ9LapEepLUa7AW4ptIHVSi51kLRb8s4Y9l5Jf1-cn-Y3LfJ_b_JPTQIDlBt4rSm8m79AfUG_A2HNw</recordid><startdate>20240501</startdate><enddate>20240501</enddate><creator>Yılmaz, Tuğbahan</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8633-5845</orcidid></search><sort><creationdate>20240501</creationdate><title>Improving the performance parameters of organic field-effect transistors via alkyl chain length of boronic acid self-assembled monolayers</title><author>Yılmaz, Tuğbahan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c314t-1e71f3d2324baab225a8410dcde85cc5721eb1313e8fe347d326f3fe70438d0a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Acids</topic><topic>Aluminum</topic><topic>Aluminum oxide</topic><topic>Boron</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Contact angle</topic><topic>Dielectrics</topic><topic>Field effect transistors</topic><topic>Materials Science</topic><topic>Measurement techniques</topic><topic>Metal oxides</topic><topic>Monolayers</topic><topic>Morphology</topic><topic>Optical and Electronic Materials</topic><topic>Optoelectronics</topic><topic>Parameter modification</topic><topic>Self-assembled monolayers</topic><topic>Self-assembly</topic><topic>Semiconductor devices</topic><topic>Thin films</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yılmaz, Tuğbahan</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yılmaz, Tuğbahan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improving the performance parameters of organic field-effect transistors via alkyl chain length of boronic acid self-assembled monolayers</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2024-05-01</date><risdate>2024</risdate><volume>35</volume><issue>14</issue><spage>966</spage><pages>966-</pages><artnum>966</artnum><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Interface modification is a promising technique for enhancing electrical parameters of Organic Field Effect Transistor (OFETs). In OFETs, self-assembled monolayer molecules are widely used for treatment dielectric/semiconductor interface layer. Modification of dielectric/semiconductor layer with SAM molecules ensures a variety of potential applications. Boronic acids with four different alkyl chain lengths (
C
n
-BA; n
=
8, 10, 12, 14
) molecules were used in this study to treat the Al
2
O
3
dielectric surface in dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) based OFETs. Treated with SAMs improve the mobility of Al
2
O
3
surfaces for linear and saturation regime and threshold voltages shifted from positive direction. The morphological and electrical characterizations were performed for fabricated OFET. The results show that alkyl-boronic acids SAM molecules open a new perspective for further optoelectronic applications due to its application for oxide surfaces and controllability.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-024-12720-3</doi><orcidid>https://orcid.org/0000-0001-8633-5845</orcidid><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of materials science. Materials in electronics, 2024-05, Vol.35 (14), p.966, Article 966 |
| issn | 0957-4522 1573-482X |
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| subjects | Acids Aluminum Aluminum oxide Boron Characterization and Evaluation of Materials Chemistry and Materials Science Contact angle Dielectrics Field effect transistors Materials Science Measurement techniques Metal oxides Monolayers Morphology Optical and Electronic Materials Optoelectronics Parameter modification Self-assembled monolayers Self-assembly Semiconductor devices Thin films Threshold voltage Transistors |
| title | Improving the performance parameters of organic field-effect transistors via alkyl chain length of boronic acid self-assembled monolayers |
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