Direct One-Step Plasma-Chemical Synthesis of Nanostructured β-Ga2O3–GaN Thin Films of Various Compositions

For the first time, nanostructured thin films of the β-Ga 2 O 3 −GaN system have been obtained by plasma-enhanced chemical vapor deposition (PECVD) on c-plane sapphire substrates. High-purity gallium metal, as well as high-purity gaseous nitrogen and oxygen, were used as sources of macrocomponents....

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Veröffentlicht in:	High energy chemistry 2024-06, Vol.58 (3), p.322-327
Hauptverfasser:	Mochalov, L. A., Kudryashov, M. A., Vshivtsev, M. A., Kudryashova, Yu. P., Prokhorov, I. O., Knyazev, A. V., Almaev, A. V., Yakovlev, N. N., Chernikov, E. V., Erzakova, N. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical synthesis Chemistry Chemistry and Materials Science Gallium oxides Low temperature Nanostructure Nitrogen Nonequilibrium plasmas Optical emission spectroscopy Oxygen Physical Chemistry Plasma Chemistry Plasma enhanced chemical vapor deposition Purity Sapphire Substrates Thin films
Online-Zugang:	Volltext
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