Direct One-Step Plasma-Chemical Synthesis of Nanostructured β-Ga2O3–GaN Thin Films of Various Compositions
For the first time, nanostructured thin films of the β-Ga 2 O 3 −GaN system have been obtained by plasma-enhanced chemical vapor deposition (PECVD) on c-plane sapphire substrates. High-purity gallium metal, as well as high-purity gaseous nitrogen and oxygen, were used as sources of macrocomponents....
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| Veröffentlicht in: | High energy chemistry 2024-06, Vol.58 (3), p.322-327 |
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| creator | Mochalov, L. A. Kudryashov, M. A. Vshivtsev, M. A. Kudryashova, Yu. P. Prokhorov, I. O. Knyazev, A. V. Almaev, A. V. Yakovlev, N. N. Chernikov, E. V. Erzakova, N. N. |
| description | For the first time, nanostructured thin films of the β-Ga
2
O
3
−GaN system have been obtained by plasma-enhanced chemical vapor deposition (PECVD) on c-plane sapphire substrates. High-purity gallium metal, as well as high-purity gaseous nitrogen and oxygen, were used as sources of macrocomponents. Low-temperature nonequilibrium plasma of an inductively coupled RF (40.68 MHz) discharge at reduced pressure (0.01 torr) was the initiator of chemical transformations between the reactants. A mixture of oxygen and nitrogen was used as a plasma-forming gas. The plasma-chemical process was studied using optical emission spectroscopy (OES). The resulting β-Ga
2
O
3
−GaN thin films with a GaN content of 2 to 7% were characterized by various analytical methods. |
| doi_str_mv | 10.1134/S0018143924700139 |
| format | Article |
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2
O
3
−GaN system have been obtained by plasma-enhanced chemical vapor deposition (PECVD) on c-plane sapphire substrates. High-purity gallium metal, as well as high-purity gaseous nitrogen and oxygen, were used as sources of macrocomponents. Low-temperature nonequilibrium plasma of an inductively coupled RF (40.68 MHz) discharge at reduced pressure (0.01 torr) was the initiator of chemical transformations between the reactants. A mixture of oxygen and nitrogen was used as a plasma-forming gas. The plasma-chemical process was studied using optical emission spectroscopy (OES). The resulting β-Ga
2
O
3
−GaN thin films with a GaN content of 2 to 7% were characterized by various analytical methods.</description><identifier>ISSN: 0018-1439</identifier><identifier>EISSN: 1608-3148</identifier><identifier>DOI: 10.1134/S0018143924700139</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Chemical synthesis ; Chemistry ; Chemistry and Materials Science ; Gallium oxides ; Low temperature ; Nanostructure ; Nitrogen ; Nonequilibrium plasmas ; Optical emission spectroscopy ; Oxygen ; Physical Chemistry ; Plasma Chemistry ; Plasma enhanced chemical vapor deposition ; Purity ; Sapphire ; Substrates ; Thin films</subject><ispartof>High energy chemistry, 2024-06, Vol.58 (3), p.322-327</ispartof><rights>Pleiades Publishing, Ltd. 2024. ISSN 0018-1439, High Energy Chemistry, 2024, Vol. 58, No. 3, pp. 322–327. © Pleiades Publishing, Ltd., 2024.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c268t-66e4970597671838481ef87d37c680459852e386eb18a5c3df5c0b9af1701b933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S0018143924700139$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S0018143924700139$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Mochalov, L. A.</creatorcontrib><creatorcontrib>Kudryashov, M. A.</creatorcontrib><creatorcontrib>Vshivtsev, M. A.</creatorcontrib><creatorcontrib>Kudryashova, Yu. P.</creatorcontrib><creatorcontrib>Prokhorov, I. O.</creatorcontrib><creatorcontrib>Knyazev, A. V.</creatorcontrib><creatorcontrib>Almaev, A. V.</creatorcontrib><creatorcontrib>Yakovlev, N. N.</creatorcontrib><creatorcontrib>Chernikov, E. V.</creatorcontrib><creatorcontrib>Erzakova, N. N.</creatorcontrib><title>Direct One-Step Plasma-Chemical Synthesis of Nanostructured β-Ga2O3–GaN Thin Films of Various Compositions</title><title>High energy chemistry</title><addtitle>High Energy Chem</addtitle><description>For the first time, nanostructured thin films of the β-Ga
2
O
3
−GaN system have been obtained by plasma-enhanced chemical vapor deposition (PECVD) on c-plane sapphire substrates. High-purity gallium metal, as well as high-purity gaseous nitrogen and oxygen, were used as sources of macrocomponents. Low-temperature nonequilibrium plasma of an inductively coupled RF (40.68 MHz) discharge at reduced pressure (0.01 torr) was the initiator of chemical transformations between the reactants. A mixture of oxygen and nitrogen was used as a plasma-forming gas. The plasma-chemical process was studied using optical emission spectroscopy (OES). The resulting β-Ga
2
O
3
−GaN thin films with a GaN content of 2 to 7% were characterized by various analytical methods.</description><subject>Chemical synthesis</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Gallium oxides</subject><subject>Low temperature</subject><subject>Nanostructure</subject><subject>Nitrogen</subject><subject>Nonequilibrium plasmas</subject><subject>Optical emission spectroscopy</subject><subject>Oxygen</subject><subject>Physical Chemistry</subject><subject>Plasma Chemistry</subject><subject>Plasma enhanced chemical vapor deposition</subject><subject>Purity</subject><subject>Sapphire</subject><subject>Substrates</subject><subject>Thin films</subject><issn>0018-1439</issn><issn>1608-3148</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp1kEFKAzEYhYMoWKsHcBdwHU0mmSSzlFGrUFqh1e2QphmbMjMZk8yiO-_gTTyIh_AkTlvBhbj6H7zvvR8eAOcEXxJC2dUMYyIJo1nCRC9pdgAGhGOJKGHyEAy2Ntr6x-AkhDXGOMUUD0B9Y73REU4bg2bRtPCxUqFWKF-Z2mpVwdmmiSsTbICuhBPVuBB9p2PnzRJ-fqCRSqb06-19pCZwvrINvLNVvWOflbeuCzB3deuCjdY14RQclaoK5uznDsHT3e08v0fj6eghvx4jnXAZEeeGZQKnmeCCSCqZJKaUYkmF5hKzNJNpYqjkZkGkSjVdlqnGi0yVRGCyyCgdgot9b-vda2dCLNau803_sqA4ZYwnbEeRPaW9C8Gbsmi9rZXfFAQX21WLP6v2mWSfCT3bvBj_2_x_6BvNYXj4</recordid><startdate>20240601</startdate><enddate>20240601</enddate><creator>Mochalov, L. A.</creator><creator>Kudryashov, M. A.</creator><creator>Vshivtsev, M. A.</creator><creator>Kudryashova, Yu. P.</creator><creator>Prokhorov, I. O.</creator><creator>Knyazev, A. V.</creator><creator>Almaev, A. V.</creator><creator>Yakovlev, N. N.</creator><creator>Chernikov, E. V.</creator><creator>Erzakova, N. N.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20240601</creationdate><title>Direct One-Step Plasma-Chemical Synthesis of Nanostructured β-Ga2O3–GaN Thin Films of Various Compositions</title><author>Mochalov, L. A. ; Kudryashov, M. A. ; Vshivtsev, M. A. ; Kudryashova, Yu. P. ; Prokhorov, I. O. ; Knyazev, A. V. ; Almaev, A. V. ; Yakovlev, N. N. ; Chernikov, E. V. ; Erzakova, N. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c268t-66e4970597671838481ef87d37c680459852e386eb18a5c3df5c0b9af1701b933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Chemical synthesis</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Gallium oxides</topic><topic>Low temperature</topic><topic>Nanostructure</topic><topic>Nitrogen</topic><topic>Nonequilibrium plasmas</topic><topic>Optical emission spectroscopy</topic><topic>Oxygen</topic><topic>Physical Chemistry</topic><topic>Plasma Chemistry</topic><topic>Plasma enhanced chemical vapor deposition</topic><topic>Purity</topic><topic>Sapphire</topic><topic>Substrates</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mochalov, L. A.</creatorcontrib><creatorcontrib>Kudryashov, M. A.</creatorcontrib><creatorcontrib>Vshivtsev, M. A.</creatorcontrib><creatorcontrib>Kudryashova, Yu. P.</creatorcontrib><creatorcontrib>Prokhorov, I. O.</creatorcontrib><creatorcontrib>Knyazev, A. V.</creatorcontrib><creatorcontrib>Almaev, A. V.</creatorcontrib><creatorcontrib>Yakovlev, N. N.</creatorcontrib><creatorcontrib>Chernikov, E. V.</creatorcontrib><creatorcontrib>Erzakova, N. N.</creatorcontrib><collection>CrossRef</collection><jtitle>High energy chemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mochalov, L. A.</au><au>Kudryashov, M. A.</au><au>Vshivtsev, M. A.</au><au>Kudryashova, Yu. P.</au><au>Prokhorov, I. O.</au><au>Knyazev, A. V.</au><au>Almaev, A. V.</au><au>Yakovlev, N. N.</au><au>Chernikov, E. V.</au><au>Erzakova, N. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct One-Step Plasma-Chemical Synthesis of Nanostructured β-Ga2O3–GaN Thin Films of Various Compositions</atitle><jtitle>High energy chemistry</jtitle><stitle>High Energy Chem</stitle><date>2024-06-01</date><risdate>2024</risdate><volume>58</volume><issue>3</issue><spage>322</spage><epage>327</epage><pages>322-327</pages><issn>0018-1439</issn><eissn>1608-3148</eissn><abstract>For the first time, nanostructured thin films of the β-Ga
2
O
3
−GaN system have been obtained by plasma-enhanced chemical vapor deposition (PECVD) on c-plane sapphire substrates. High-purity gallium metal, as well as high-purity gaseous nitrogen and oxygen, were used as sources of macrocomponents. Low-temperature nonequilibrium plasma of an inductively coupled RF (40.68 MHz) discharge at reduced pressure (0.01 torr) was the initiator of chemical transformations between the reactants. A mixture of oxygen and nitrogen was used as a plasma-forming gas. The plasma-chemical process was studied using optical emission spectroscopy (OES). The resulting β-Ga
2
O
3
−GaN thin films with a GaN content of 2 to 7% were characterized by various analytical methods.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S0018143924700139</doi><tpages>6</tpages></addata></record> |
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| source | SpringerNature Journals |
| subjects | Chemical synthesis Chemistry Chemistry and Materials Science Gallium oxides Low temperature Nanostructure Nitrogen Nonequilibrium plasmas Optical emission spectroscopy Oxygen Physical Chemistry Plasma Chemistry Plasma enhanced chemical vapor deposition Purity Sapphire Substrates Thin films |
| title | Direct One-Step Plasma-Chemical Synthesis of Nanostructured β-Ga2O3–GaN Thin Films of Various Compositions |
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