Simulation of Silicon Irradiation with C60 Ions: Unveiling the Role of the Interaction Potential

Molecular dynamic simulation was used to study the processes of molecular 2 to 14 keV C60 ion impact on the (100) Si surface at 0 to 1000 K. Tersoff-ZBL and Airebo interaction potentials were used, and electronic energy loss were taken into account as quasifriction force for fast particles. It is sh...

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Veröffentlicht in:	Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2024-04, Vol.18 (2), p.433-438
Hauptverfasser:	Karasev, K. P., Strizhkin, D. A., Titov, A. I., Karaseov, P. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accumulation Atomic properties Atomizing Atoms & subatomic particles Buckminsterfullerene Carbon Chemistry and Materials Science Etch pits Film growth Fluence Impact analysis Ion impact Materials Science Molecular dynamics Penetration depth Silicon Simulation Sputtering Surfaces and Interfaces Thermalization (energy absorption) Thin Films
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