Thermal conductivity reduction due to phonon geometrical scattering in nano-engineered epitaxial germanium

Nano-engineering crystalline materials can be used to tailor their thermal properties. By adding new nanoscale phonon scattering centers and controlling their size, one can effectively decrease the phonon mean free path and hence the thermal conductivity of a fully crystalline material. In this lett...

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Veröffentlicht in:arXiv.org 2024-04
Hauptverfasser: Paterson, Jessy, Mitra, Sunanda, Liu, Yanqing, Boukhari, Mustapha, Singhal, Dhruv, Lacroix, David, Hadji, Emmanuel, Barski, André, Tainoff, Dimitri, Bourgeois, Olivier
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creator Paterson, Jessy
Mitra, Sunanda
Liu, Yanqing
Boukhari, Mustapha
Singhal, Dhruv
Lacroix, David
Hadji, Emmanuel
Barski, André
Tainoff, Dimitri
Bourgeois, Olivier
description Nano-engineering crystalline materials can be used to tailor their thermal properties. By adding new nanoscale phonon scattering centers and controlling their size, one can effectively decrease the phonon mean free path and hence the thermal conductivity of a fully crystalline material. In this letter, we use the 3\(\omega\) method in the temperature range of 100-300 K to experimentally report on the more than threefold reduction of the thermal conductivity of an epitaxially-grown crystalline germanium thin film with embedded polydispersed crystalline \ch{Ge3Mn5} nano-inclusions with diameters ranging from 5 to 25~nm. A detailed analysis of the structure of the thin film coupled with Monte Carlo simulations of phonon transport highlight the role of the nano-inclusions volume fraction in the reduction of the phononic contribution to the thermal conductivity, in particular its temperature dependence, leading to a phonon mean free path that is set by geometrical constraints.
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subjects Epitaxial growth
Germanium
Heat transfer
Inclusions
Mean free path
Monte Carlo simulation
Nanoengineering
Phonons
Scattering
Temperature dependence
Thermal conductivity
Thermodynamic properties
Thin films
title Thermal conductivity reduction due to phonon geometrical scattering in nano-engineered epitaxial germanium
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