Plasmonic Absorber Based on Engineered Cu-ITO Structure on Silicon With Low Voltage Tuning and High Extinction Ratio
An electrically tunable plasmonic absorber device is experimentally demonstrated at 1550 nm wavelength. The device consists of alternating Cu- ITO grating on the top of a p-type silicon rib waveguide, filled with n-type indium tin oxide (ITO) as a capping layer. The distributed plasmonic mode at the...
Gespeichert in:
| Veröffentlicht in: | Journal of lightwave technology 2024-05, Vol.42 (10), p.3779-3785 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 3785 |
|---|---|
| container_issue | 10 |
| container_start_page | 3779 |
| container_title | Journal of lightwave technology |
| container_volume | 42 |
| creator | Pandey, Suresh Kumar Mishra, Rahul Dev Babu, Prem Mohanta, Nikita Kumar, Santosh Kumar, Mukesh |
| description | An electrically tunable plasmonic absorber device is experimentally demonstrated at 1550 nm wavelength. The device consists of alternating Cu- ITO grating on the top of a p-type silicon rib waveguide, filled with n-type indium tin oxide (ITO) as a capping layer. The distributed plasmonic mode at the interface of Cu-SiO 2 -Si is efficiently coupled with ITO. The electrically tunable permittivity of ITO changes the optical absorption by employing electrically driven carrier depletion and accumulation. We demonstrate large tuning of optical intensity by electrically driven carrier accumulation at ITO interface by applying very low voltage from 0 to −4 V. A 100-μm long device exhibits a high extinction ratio of 22 dB and wide 3 dB bandwidth of 52.2 GHz. Applications for our proposed device include imaging, biosensing, intensity modulators, and other multi-functional nanophotonic devices where change in optical absorption is a key requirement. |
| doi_str_mv | 10.1109/JLT.2024.3362363 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_3049489843</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10423103</ieee_id><sourcerecordid>3049489843</sourcerecordid><originalsourceid>FETCH-LOGICAL-c292t-37015960ef1a041a1ec6363dc1f0e5d140329e026edb62b1875c7db28586a4d33</originalsourceid><addsrcrecordid>eNpNkD1PwzAQhi0EEqWwMzBYYk7xV77GUhVaVKmIBhgjx7mkrlKn2I6Af0-idmB6dbrn7nQPQreUTCgl6cPLKpswwsSE84jxiJ-hEQ3DJGCM8nM0IjHnQRIzcYmunNsRQoVI4hHyr410-9ZohaeFa20BFj9KByVuDZ6bWhsA21ezLlhma7zxtlO-szC0N7rRqs9P7bd41X7jj7bxsgacdUabGktT4oWut3j-47VRXvfsm-zjGl1UsnFwc8oxen-aZ7NFsFo_L2fTVaBYynzAY0LDNCJQUUkElRRU1H9WKloRCEsqCGcpEBZBWUSsoEkcqrgsWBImkRQl52N0f9x7sO1XB87nu7azpj-ZcyJSkaSJGChypJRtnbNQ5Qer99L-5pTkg9u8d5sPbvOT237k7jiiAeAfLhinhPM_YjF0Yg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3049489843</pqid></control><display><type>article</type><title>Plasmonic Absorber Based on Engineered Cu-ITO Structure on Silicon With Low Voltage Tuning and High Extinction Ratio</title><source>IEEE Electronic Library (IEL)</source><creator>Pandey, Suresh Kumar ; Mishra, Rahul Dev ; Babu, Prem ; Mohanta, Nikita ; Kumar, Santosh ; Kumar, Mukesh</creator><creatorcontrib>Pandey, Suresh Kumar ; Mishra, Rahul Dev ; Babu, Prem ; Mohanta, Nikita ; Kumar, Santosh ; Kumar, Mukesh</creatorcontrib><description>An electrically tunable plasmonic absorber device is experimentally demonstrated at 1550 nm wavelength. The device consists of alternating Cu- ITO grating on the top of a p-type silicon rib waveguide, filled with n-type indium tin oxide (ITO) as a capping layer. The distributed plasmonic mode at the interface of Cu-SiO 2 -Si is efficiently coupled with ITO. The electrically tunable permittivity of ITO changes the optical absorption by employing electrically driven carrier depletion and accumulation. We demonstrate large tuning of optical intensity by electrically driven carrier accumulation at ITO interface by applying very low voltage from 0 to −4 V. A 100-μm long device exhibits a high extinction ratio of 22 dB and wide 3 dB bandwidth of 52.2 GHz. Applications for our proposed device include imaging, biosensing, intensity modulators, and other multi-functional nanophotonic devices where change in optical absorption is a key requirement.</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/JLT.2024.3362363</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Absorbers ; Absorption ; Accumulation ; Copper ; Cu-ITO grating ; Extinction ; Gratings ; Indium tin oxide ; Indium tin oxides ; Low voltage ; Modulators ; Optical imaging ; plasmonic ; Plasmonics ; Plasmons ; Silicon ; Silicon dioxide ; SPPs ; TCO ; tunable absorber ; Tuning ; Waveguides</subject><ispartof>Journal of lightwave technology, 2024-05, Vol.42 (10), p.3779-3785</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-37015960ef1a041a1ec6363dc1f0e5d140329e026edb62b1875c7db28586a4d33</citedby><cites>FETCH-LOGICAL-c292t-37015960ef1a041a1ec6363dc1f0e5d140329e026edb62b1875c7db28586a4d33</cites><orcidid>0000-0002-6537-1246 ; 0000-0001-9566-6240 ; 0000-0003-2465-4634 ; 0000-0001-7091-5263 ; 0000-0001-7206-4597 ; 0009-0003-7094-914X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10423103$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10423103$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Pandey, Suresh Kumar</creatorcontrib><creatorcontrib>Mishra, Rahul Dev</creatorcontrib><creatorcontrib>Babu, Prem</creatorcontrib><creatorcontrib>Mohanta, Nikita</creatorcontrib><creatorcontrib>Kumar, Santosh</creatorcontrib><creatorcontrib>Kumar, Mukesh</creatorcontrib><title>Plasmonic Absorber Based on Engineered Cu-ITO Structure on Silicon With Low Voltage Tuning and High Extinction Ratio</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>An electrically tunable plasmonic absorber device is experimentally demonstrated at 1550 nm wavelength. The device consists of alternating Cu- ITO grating on the top of a p-type silicon rib waveguide, filled with n-type indium tin oxide (ITO) as a capping layer. The distributed plasmonic mode at the interface of Cu-SiO 2 -Si is efficiently coupled with ITO. The electrically tunable permittivity of ITO changes the optical absorption by employing electrically driven carrier depletion and accumulation. We demonstrate large tuning of optical intensity by electrically driven carrier accumulation at ITO interface by applying very low voltage from 0 to −4 V. A 100-μm long device exhibits a high extinction ratio of 22 dB and wide 3 dB bandwidth of 52.2 GHz. Applications for our proposed device include imaging, biosensing, intensity modulators, and other multi-functional nanophotonic devices where change in optical absorption is a key requirement.</description><subject>Absorbers</subject><subject>Absorption</subject><subject>Accumulation</subject><subject>Copper</subject><subject>Cu-ITO grating</subject><subject>Extinction</subject><subject>Gratings</subject><subject>Indium tin oxide</subject><subject>Indium tin oxides</subject><subject>Low voltage</subject><subject>Modulators</subject><subject>Optical imaging</subject><subject>plasmonic</subject><subject>Plasmonics</subject><subject>Plasmons</subject><subject>Silicon</subject><subject>Silicon dioxide</subject><subject>SPPs</subject><subject>TCO</subject><subject>tunable absorber</subject><subject>Tuning</subject><subject>Waveguides</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkD1PwzAQhi0EEqWwMzBYYk7xV77GUhVaVKmIBhgjx7mkrlKn2I6Af0-idmB6dbrn7nQPQreUTCgl6cPLKpswwsSE84jxiJ-hEQ3DJGCM8nM0IjHnQRIzcYmunNsRQoVI4hHyr410-9ZohaeFa20BFj9KByVuDZ6bWhsA21ezLlhma7zxtlO-szC0N7rRqs9P7bd41X7jj7bxsgacdUabGktT4oWut3j-47VRXvfsm-zjGl1UsnFwc8oxen-aZ7NFsFo_L2fTVaBYynzAY0LDNCJQUUkElRRU1H9WKloRCEsqCGcpEBZBWUSsoEkcqrgsWBImkRQl52N0f9x7sO1XB87nu7azpj-ZcyJSkaSJGChypJRtnbNQ5Qer99L-5pTkg9u8d5sPbvOT237k7jiiAeAfLhinhPM_YjF0Yg</recordid><startdate>20240515</startdate><enddate>20240515</enddate><creator>Pandey, Suresh Kumar</creator><creator>Mishra, Rahul Dev</creator><creator>Babu, Prem</creator><creator>Mohanta, Nikita</creator><creator>Kumar, Santosh</creator><creator>Kumar, Mukesh</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-6537-1246</orcidid><orcidid>https://orcid.org/0000-0001-9566-6240</orcidid><orcidid>https://orcid.org/0000-0003-2465-4634</orcidid><orcidid>https://orcid.org/0000-0001-7091-5263</orcidid><orcidid>https://orcid.org/0000-0001-7206-4597</orcidid><orcidid>https://orcid.org/0009-0003-7094-914X</orcidid></search><sort><creationdate>20240515</creationdate><title>Plasmonic Absorber Based on Engineered Cu-ITO Structure on Silicon With Low Voltage Tuning and High Extinction Ratio</title><author>Pandey, Suresh Kumar ; Mishra, Rahul Dev ; Babu, Prem ; Mohanta, Nikita ; Kumar, Santosh ; Kumar, Mukesh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-37015960ef1a041a1ec6363dc1f0e5d140329e026edb62b1875c7db28586a4d33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Absorbers</topic><topic>Absorption</topic><topic>Accumulation</topic><topic>Copper</topic><topic>Cu-ITO grating</topic><topic>Extinction</topic><topic>Gratings</topic><topic>Indium tin oxide</topic><topic>Indium tin oxides</topic><topic>Low voltage</topic><topic>Modulators</topic><topic>Optical imaging</topic><topic>plasmonic</topic><topic>Plasmonics</topic><topic>Plasmons</topic><topic>Silicon</topic><topic>Silicon dioxide</topic><topic>SPPs</topic><topic>TCO</topic><topic>tunable absorber</topic><topic>Tuning</topic><topic>Waveguides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pandey, Suresh Kumar</creatorcontrib><creatorcontrib>Mishra, Rahul Dev</creatorcontrib><creatorcontrib>Babu, Prem</creatorcontrib><creatorcontrib>Mohanta, Nikita</creatorcontrib><creatorcontrib>Kumar, Santosh</creatorcontrib><creatorcontrib>Kumar, Mukesh</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pandey, Suresh Kumar</au><au>Mishra, Rahul Dev</au><au>Babu, Prem</au><au>Mohanta, Nikita</au><au>Kumar, Santosh</au><au>Kumar, Mukesh</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Plasmonic Absorber Based on Engineered Cu-ITO Structure on Silicon With Low Voltage Tuning and High Extinction Ratio</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>2024-05-15</date><risdate>2024</risdate><volume>42</volume><issue>10</issue><spage>3779</spage><epage>3785</epage><pages>3779-3785</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>An electrically tunable plasmonic absorber device is experimentally demonstrated at 1550 nm wavelength. The device consists of alternating Cu- ITO grating on the top of a p-type silicon rib waveguide, filled with n-type indium tin oxide (ITO) as a capping layer. The distributed plasmonic mode at the interface of Cu-SiO 2 -Si is efficiently coupled with ITO. The electrically tunable permittivity of ITO changes the optical absorption by employing electrically driven carrier depletion and accumulation. We demonstrate large tuning of optical intensity by electrically driven carrier accumulation at ITO interface by applying very low voltage from 0 to −4 V. A 100-μm long device exhibits a high extinction ratio of 22 dB and wide 3 dB bandwidth of 52.2 GHz. Applications for our proposed device include imaging, biosensing, intensity modulators, and other multi-functional nanophotonic devices where change in optical absorption is a key requirement.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JLT.2024.3362363</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-6537-1246</orcidid><orcidid>https://orcid.org/0000-0001-9566-6240</orcidid><orcidid>https://orcid.org/0000-0003-2465-4634</orcidid><orcidid>https://orcid.org/0000-0001-7091-5263</orcidid><orcidid>https://orcid.org/0000-0001-7206-4597</orcidid><orcidid>https://orcid.org/0009-0003-7094-914X</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0733-8724 |
| ispartof | Journal of lightwave technology, 2024-05, Vol.42 (10), p.3779-3785 |
| issn | 0733-8724 1558-2213 |
| language | eng |
| recordid | cdi_proquest_journals_3049489843 |
| source | IEEE Electronic Library (IEL) |
| subjects | Absorbers Absorption Accumulation Copper Cu-ITO grating Extinction Gratings Indium tin oxide Indium tin oxides Low voltage Modulators Optical imaging plasmonic Plasmonics Plasmons Silicon Silicon dioxide SPPs TCO tunable absorber Tuning Waveguides |
| title | Plasmonic Absorber Based on Engineered Cu-ITO Structure on Silicon With Low Voltage Tuning and High Extinction Ratio |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T13%3A45%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Plasmonic%20Absorber%20Based%20on%20Engineered%20Cu-ITO%20Structure%20on%20Silicon%20With%20Low%20Voltage%20Tuning%20and%20High%20Extinction%20Ratio&rft.jtitle=Journal%20of%20lightwave%20technology&rft.au=Pandey,%20Suresh%20Kumar&rft.date=2024-05-15&rft.volume=42&rft.issue=10&rft.spage=3779&rft.epage=3785&rft.pages=3779-3785&rft.issn=0733-8724&rft.eissn=1558-2213&rft.coden=JLTEDG&rft_id=info:doi/10.1109/JLT.2024.3362363&rft_dat=%3Cproquest_RIE%3E3049489843%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3049489843&rft_id=info:pmid/&rft_ieee_id=10423103&rfr_iscdi=true |