Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor
Physics-based 3D simulations were conducted on a GaN high-electron-mobility transistor (HEMT) and a super-heterojunction field-effect transistor (SHJFET) to investigate the single event effect mechanism under heavy ion irradiation. Most of the single event transient current in HEMT was attributed to...
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| Veröffentlicht in: | Applied physics letters 2024-04, Vol.124 (17) |
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| container_title | Applied physics letters |
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| creator | Song, Jianan Chakravorty, Anusmita Jin, Miaomiao Chu, Rongming |
| description | Physics-based 3D simulations were conducted on a GaN high-electron-mobility transistor (HEMT) and a super-heterojunction field-effect transistor (SHJFET) to investigate the single event effect mechanism under heavy ion irradiation. Most of the single event transient current in HEMT was attributed to the punch-through effect in the bulk caused by the local increase in electrostatic potential. With improved E-field management and a more favorable potential profile to suppress source electron injection, the SHJFET had a 70% lower transient current peak value compared to the HEMT. |
| doi_str_mv | 10.1063/5.0185373 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_3044671242</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3044671242</sourcerecordid><originalsourceid>FETCH-LOGICAL-c252t-944e6707ebd0fe50db03bb0c4f94cd6b849198ac7fc0de45ce65da8ee67b31193</originalsourceid><addsrcrecordid>eNp9kM1KAzEUhYMoWKsL3yDgSiE1mSTzs5SqVRB1oeshk7lpU6ZJTTJCn8TXdfqzcOXq3APfuQcOQpeMThjN-a2cUFZKXvAjNGK0KAhnrDxGI0opJ3kl2Sk6i3E5WJlxPkI_74tNtDqSRkVoMb_H0a76TiXrHfZmcG7eAYZvcAmnoFy020v3IWzVOjxTr3hh5wsCHegUvCMr39jOps2Bj8kHrFyLY7-GQBaQIPhl7_Suw1joWgLGDOE_gXN0YlQX4eKgY_T5-PAxfSIvb7Pn6d0L0ZnMEqmEgLygBTQtNSBp21DeNFQLUwnd5k0pKlaVShdG0xaE1JDLVpUwhJphmYqP0dX-7zr4rx5iqpe-D26orDkVIi9YJrKBut5TOvgYA5h6HexKhU3NaL3dvZb1YfeBvdmzUdu02_Ef-BeyBIZt</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3044671242</pqid></control><display><type>article</type><title>Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor</title><source>AIP Journals Complete</source><creator>Song, Jianan ; Chakravorty, Anusmita ; Jin, Miaomiao ; Chu, Rongming</creator><creatorcontrib>Song, Jianan ; Chakravorty, Anusmita ; Jin, Miaomiao ; Chu, Rongming</creatorcontrib><description>Physics-based 3D simulations were conducted on a GaN high-electron-mobility transistor (HEMT) and a super-heterojunction field-effect transistor (SHJFET) to investigate the single event effect mechanism under heavy ion irradiation. Most of the single event transient current in HEMT was attributed to the punch-through effect in the bulk caused by the local increase in electrostatic potential. With improved E-field management and a more favorable potential profile to suppress source electron injection, the SHJFET had a 70% lower transient current peak value compared to the HEMT.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0185373</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Field effect transistors ; Gallium nitrides ; Heavy ions ; Heterojunctions ; High electron mobility transistors ; Ion irradiation ; Semiconductor devices ; Single Event Effects ; Transient current</subject><ispartof>Applied physics letters, 2024-04, Vol.124 (17)</ispartof><rights>Author(s)</rights><rights>2024 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c252t-944e6707ebd0fe50db03bb0c4f94cd6b849198ac7fc0de45ce65da8ee67b31193</cites><orcidid>0000-0002-4968-7793 ; 0000-0003-3126-014X ; 0000-0002-3543-4082 ; 0000-0003-3262-5120</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0185373$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,777,781,791,4498,27905,27906,76133</link.rule.ids></links><search><creatorcontrib>Song, Jianan</creatorcontrib><creatorcontrib>Chakravorty, Anusmita</creatorcontrib><creatorcontrib>Jin, Miaomiao</creatorcontrib><creatorcontrib>Chu, Rongming</creatorcontrib><title>Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor</title><title>Applied physics letters</title><description>Physics-based 3D simulations were conducted on a GaN high-electron-mobility transistor (HEMT) and a super-heterojunction field-effect transistor (SHJFET) to investigate the single event effect mechanism under heavy ion irradiation. Most of the single event transient current in HEMT was attributed to the punch-through effect in the bulk caused by the local increase in electrostatic potential. With improved E-field management and a more favorable potential profile to suppress source electron injection, the SHJFET had a 70% lower transient current peak value compared to the HEMT.</description><subject>Field effect transistors</subject><subject>Gallium nitrides</subject><subject>Heavy ions</subject><subject>Heterojunctions</subject><subject>High electron mobility transistors</subject><subject>Ion irradiation</subject><subject>Semiconductor devices</subject><subject>Single Event Effects</subject><subject>Transient current</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KAzEUhYMoWKsL3yDgSiE1mSTzs5SqVRB1oeshk7lpU6ZJTTJCn8TXdfqzcOXq3APfuQcOQpeMThjN-a2cUFZKXvAjNGK0KAhnrDxGI0opJ3kl2Sk6i3E5WJlxPkI_74tNtDqSRkVoMb_H0a76TiXrHfZmcG7eAYZvcAmnoFy020v3IWzVOjxTr3hh5wsCHegUvCMr39jOps2Bj8kHrFyLY7-GQBaQIPhl7_Suw1joWgLGDOE_gXN0YlQX4eKgY_T5-PAxfSIvb7Pn6d0L0ZnMEqmEgLygBTQtNSBp21DeNFQLUwnd5k0pKlaVShdG0xaE1JDLVpUwhJphmYqP0dX-7zr4rx5iqpe-D26orDkVIi9YJrKBut5TOvgYA5h6HexKhU3NaL3dvZb1YfeBvdmzUdu02_Ef-BeyBIZt</recordid><startdate>20240422</startdate><enddate>20240422</enddate><creator>Song, Jianan</creator><creator>Chakravorty, Anusmita</creator><creator>Jin, Miaomiao</creator><creator>Chu, Rongming</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-4968-7793</orcidid><orcidid>https://orcid.org/0000-0003-3126-014X</orcidid><orcidid>https://orcid.org/0000-0002-3543-4082</orcidid><orcidid>https://orcid.org/0000-0003-3262-5120</orcidid></search><sort><creationdate>20240422</creationdate><title>Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor</title><author>Song, Jianan ; Chakravorty, Anusmita ; Jin, Miaomiao ; Chu, Rongming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c252t-944e6707ebd0fe50db03bb0c4f94cd6b849198ac7fc0de45ce65da8ee67b31193</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Field effect transistors</topic><topic>Gallium nitrides</topic><topic>Heavy ions</topic><topic>Heterojunctions</topic><topic>High electron mobility transistors</topic><topic>Ion irradiation</topic><topic>Semiconductor devices</topic><topic>Single Event Effects</topic><topic>Transient current</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Song, Jianan</creatorcontrib><creatorcontrib>Chakravorty, Anusmita</creatorcontrib><creatorcontrib>Jin, Miaomiao</creatorcontrib><creatorcontrib>Chu, Rongming</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Song, Jianan</au><au>Chakravorty, Anusmita</au><au>Jin, Miaomiao</au><au>Chu, Rongming</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor</atitle><jtitle>Applied physics letters</jtitle><date>2024-04-22</date><risdate>2024</risdate><volume>124</volume><issue>17</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Physics-based 3D simulations were conducted on a GaN high-electron-mobility transistor (HEMT) and a super-heterojunction field-effect transistor (SHJFET) to investigate the single event effect mechanism under heavy ion irradiation. Most of the single event transient current in HEMT was attributed to the punch-through effect in the bulk caused by the local increase in electrostatic potential. With improved E-field management and a more favorable potential profile to suppress source electron injection, the SHJFET had a 70% lower transient current peak value compared to the HEMT.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0185373</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-4968-7793</orcidid><orcidid>https://orcid.org/0000-0003-3126-014X</orcidid><orcidid>https://orcid.org/0000-0002-3543-4082</orcidid><orcidid>https://orcid.org/0000-0003-3262-5120</orcidid></addata></record> |
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| ispartof | Applied physics letters, 2024-04, Vol.124 (17) |
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| language | eng |
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| source | AIP Journals Complete |
| subjects | Field effect transistors Gallium nitrides Heavy ions Heterojunctions High electron mobility transistors Ion irradiation Semiconductor devices Single Event Effects Transient current |
| title | Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor |
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