Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations
GaN high-electron-mobility transistor (HEMT) has superior features of wide band gap, high electron mobility and very high electric field strength due to its material advantages. By using the GaN HEMT, switching frequency can be enhanced up to megahertz with extremely high efficiency. Unfortunately,...
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| Veröffentlicht in: | IEEE access 2024, Vol.12, p.55551-55567 |
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| creator | Faizan, Muhammad Han, Kai Wang, Xiaolei Yousaf, Muhammad Zain |
| description | GaN high-electron-mobility transistor (HEMT) has superior features of wide band gap, high electron mobility and very high electric field strength due to its material advantages. By using the GaN HEMT, switching frequency can be enhanced up to megahertz with extremely high efficiency. Unfortunately, GaN HEMTs accomplished by undesirable switching oscillations and voltage spikes due to extremely fast switching frequencies with very high {dv}/{dt} , {di}/{dt} and parasitic parameters. In this paper, RLC equivalent circuit models are developed for turn on and turn off conditions, including all parasitic components. In addition, the relative effect of each parasitic parameter is analyzed and estimated. Moreover, simple mathematical model is developed for theoretical analysis of switching oscillation phenomenon and, for guidance of snubber or damping circuit design. To validate these simple equivalent circuit models, both circuit simulation and experimental measurements are employed. |
| doi_str_mv | 10.1109/ACCESS.2024.3354378 |
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By using the GaN HEMT, switching frequency can be enhanced up to megahertz with extremely high efficiency. Unfortunately, GaN HEMTs accomplished by undesirable switching oscillations and voltage spikes due to extremely fast switching frequencies with very high <inline-formula> <tex-math notation="LaTeX">{dv}/{dt} </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">{di}/{dt} </tex-math></inline-formula> and parasitic parameters. In this paper, RLC equivalent circuit models are developed for turn on and turn off conditions, including all parasitic components. In addition, the relative effect of each parasitic parameter is analyzed and estimated. Moreover, simple mathematical model is developed for theoretical analysis of switching oscillation phenomenon and, for guidance of snubber or damping circuit design. To validate these simple equivalent circuit models, both circuit simulation and experimental measurements are employed.]]></description><identifier>ISSN: 2169-3536</identifier><identifier>EISSN: 2169-3536</identifier><identifier>DOI: 10.1109/ACCESS.2024.3354378</identifier><identifier>CODEN: IAECCG</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Circuit design ; Damping ; Electric field strength ; Equivalent circuits ; Gallium nitrides ; GaN HEMT ; HEMTs ; High electron mobility transistors ; Integrated circuit modeling ; Mathematical models ; MOSFET ; Oscillations ; Oscillators ; Parameters ; parasitic components ; RLC equivalent circuit model ; Semiconductor devices ; snubber circuit ; Switches ; Switching ; Switching circuits ; switching loss reduction ; switching oscillations</subject><ispartof>IEEE access, 2024, Vol.12, p.55551-55567</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c359t-7bb5a803fc4d46d446e6cb5a6b2ca2ce786914f8d990b88fc727082261fa58b23</cites><orcidid>0000-0003-3948-1756 ; 0000-0001-8672-4269 ; 0000-0001-9431-0058 ; 0000-0001-7166-6780</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10400472$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,860,2096,4010,27612,27902,27903,27904,54910</link.rule.ids></links><search><creatorcontrib>Faizan, Muhammad</creatorcontrib><creatorcontrib>Han, Kai</creatorcontrib><creatorcontrib>Wang, Xiaolei</creatorcontrib><creatorcontrib>Yousaf, Muhammad Zain</creatorcontrib><title>Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations</title><title>IEEE access</title><addtitle>Access</addtitle><description><![CDATA[GaN high-electron-mobility transistor (HEMT) has superior features of wide band gap, high electron mobility and very high electric field strength due to its material advantages. By using the GaN HEMT, switching frequency can be enhanced up to megahertz with extremely high efficiency. Unfortunately, GaN HEMTs accomplished by undesirable switching oscillations and voltage spikes due to extremely fast switching frequencies with very high <inline-formula> <tex-math notation="LaTeX">{dv}/{dt} </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">{di}/{dt} </tex-math></inline-formula> and parasitic parameters. In this paper, RLC equivalent circuit models are developed for turn on and turn off conditions, including all parasitic components. In addition, the relative effect of each parasitic parameter is analyzed and estimated. Moreover, simple mathematical model is developed for theoretical analysis of switching oscillation phenomenon and, for guidance of snubber or damping circuit design. To validate these simple equivalent circuit models, both circuit simulation and experimental measurements are employed.]]></description><subject>Circuit design</subject><subject>Damping</subject><subject>Electric field strength</subject><subject>Equivalent circuits</subject><subject>Gallium nitrides</subject><subject>GaN HEMT</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>Integrated circuit modeling</subject><subject>Mathematical models</subject><subject>MOSFET</subject><subject>Oscillations</subject><subject>Oscillators</subject><subject>Parameters</subject><subject>parasitic components</subject><subject>RLC equivalent circuit model</subject><subject>Semiconductor devices</subject><subject>snubber circuit</subject><subject>Switches</subject><subject>Switching</subject><subject>Switching circuits</subject><subject>switching loss reduction</subject><subject>switching oscillations</subject><issn>2169-3536</issn><issn>2169-3536</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpNUctuwjAQjKpWKqJ8QXuI1HOo33GOFFGKxONAe7Y2jgNGIaZxUMXf1xBUsZddzc6MvZooesZoiDHK3kbj8WS9HhJE2JBSzmgq76IewSJLKKfi_mZ-jAbe71AoGSCe9qLlAtqt2UNrNVTxwhWmSt7BmyIe1VCdvPUx1EW8sK3dBJKrY1fGU1jG61_b6q2tN_HKa1tVl6V_ih5KqLwZXHs_-v6YfI0_k_lqOhuP5ommPGuTNM85SERLzQomCsaEETpAIicaiDapFBlmpSyyDOVSljolKZKECFwClzmh_WjW-RYOdurQ2D00J-XAqgvgmo2CJtxUGQU5UEMQ00xIJimGEktGDE6BY0ZNHrxeO69D436Oxrdq545NuN4risLXOCdIBhbtWLpx3jem_H8VI3XOQXU5qHMO6ppDUL10KmuMuVEwhFhK6B8rLoKz</recordid><startdate>2024</startdate><enddate>2024</enddate><creator>Faizan, Muhammad</creator><creator>Han, Kai</creator><creator>Wang, Xiaolei</creator><creator>Yousaf, Muhammad Zain</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0003-3948-1756</orcidid><orcidid>https://orcid.org/0000-0001-8672-4269</orcidid><orcidid>https://orcid.org/0000-0001-9431-0058</orcidid><orcidid>https://orcid.org/0000-0001-7166-6780</orcidid></search><sort><creationdate>2024</creationdate><title>Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations</title><author>Faizan, Muhammad ; Han, Kai ; Wang, Xiaolei ; Yousaf, Muhammad Zain</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-7bb5a803fc4d46d446e6cb5a6b2ca2ce786914f8d990b88fc727082261fa58b23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Circuit design</topic><topic>Damping</topic><topic>Electric field strength</topic><topic>Equivalent circuits</topic><topic>Gallium nitrides</topic><topic>GaN HEMT</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>Integrated circuit modeling</topic><topic>Mathematical models</topic><topic>MOSFET</topic><topic>Oscillations</topic><topic>Oscillators</topic><topic>Parameters</topic><topic>parasitic components</topic><topic>RLC equivalent circuit model</topic><topic>Semiconductor devices</topic><topic>snubber circuit</topic><topic>Switches</topic><topic>Switching</topic><topic>Switching circuits</topic><topic>switching loss reduction</topic><topic>switching oscillations</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Faizan, Muhammad</creatorcontrib><creatorcontrib>Han, Kai</creatorcontrib><creatorcontrib>Wang, Xiaolei</creatorcontrib><creatorcontrib>Yousaf, Muhammad Zain</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>IEEE access</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Faizan, Muhammad</au><au>Han, Kai</au><au>Wang, Xiaolei</au><au>Yousaf, Muhammad Zain</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations</atitle><jtitle>IEEE access</jtitle><stitle>Access</stitle><date>2024</date><risdate>2024</risdate><volume>12</volume><spage>55551</spage><epage>55567</epage><pages>55551-55567</pages><issn>2169-3536</issn><eissn>2169-3536</eissn><coden>IAECCG</coden><abstract><![CDATA[GaN high-electron-mobility transistor (HEMT) has superior features of wide band gap, high electron mobility and very high electric field strength due to its material advantages. By using the GaN HEMT, switching frequency can be enhanced up to megahertz with extremely high efficiency. Unfortunately, GaN HEMTs accomplished by undesirable switching oscillations and voltage spikes due to extremely fast switching frequencies with very high <inline-formula> <tex-math notation="LaTeX">{dv}/{dt} </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">{di}/{dt} </tex-math></inline-formula> and parasitic parameters. In this paper, RLC equivalent circuit models are developed for turn on and turn off conditions, including all parasitic components. In addition, the relative effect of each parasitic parameter is analyzed and estimated. Moreover, simple mathematical model is developed for theoretical analysis of switching oscillation phenomenon and, for guidance of snubber or damping circuit design. To validate these simple equivalent circuit models, both circuit simulation and experimental measurements are employed.]]></abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/ACCESS.2024.3354378</doi><tpages>17</tpages><orcidid>https://orcid.org/0000-0003-3948-1756</orcidid><orcidid>https://orcid.org/0000-0001-8672-4269</orcidid><orcidid>https://orcid.org/0000-0001-9431-0058</orcidid><orcidid>https://orcid.org/0000-0001-7166-6780</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Circuit design Damping Electric field strength Equivalent circuits Gallium nitrides GaN HEMT HEMTs High electron mobility transistors Integrated circuit modeling Mathematical models MOSFET Oscillations Oscillators Parameters parasitic components RLC equivalent circuit model Semiconductor devices snubber circuit Switches Switching Switching circuits switching loss reduction switching oscillations |
| title | Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations |
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