Negatively charged boron-vacancy defect in hexagonal boron nitride nanoparticles
Fluorescent defects in two-dimensional (2D) hexagonal boron nitride (hBN) crystals have attracted a great potential in quantum information and sensing technologies. In particular, the negatively charged boron vacancy ( V B −) center has shown spin-dependent fluorescence in 2D flakes or large hBN cry...
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| Veröffentlicht in: | Applied physics letters 2024-04, Vol.124 (17) |
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| container_title | Applied physics letters |
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| creator | Alzahrani, Yahya A. Alkahtani, Masfer |
| description | Fluorescent defects in two-dimensional (2D) hexagonal boron nitride (hBN) crystals have attracted a great potential in quantum information and sensing technologies. In particular, the negatively charged boron vacancy (
V
B
−) center has shown spin-dependent fluorescence in 2D flakes or large hBN crystals, which can be manipulated at room temperature, enhancing the application scope of hBN in quantum technologies. In this work, we demonstrate the generation of this interesting spin defect in small hBN nanoparticles (NPs) with a size range of 10–50 nm. The obtained optical properties of the
V
B
− showed a photostable photoluminescence peaked at 820 nm with a spin-lattice relaxation time (T1) of 17 μs and optically detected magneto resonance (ODMR) contrast of 10%. Achieving long T1 time and high ODMR contrast is crucial for effective quantum sensing using small hBN nanocrystals. The reported spin-optical properties of the generated
V
B
− spin defect in hBN NPs are comparable to those created in bulk/flake hBN crystals. These results open the door for optimizing such spin-dependent defects in small hBN NPs for promising applications, especially in quantum sensing and biology. |
| doi_str_mv | 10.1063/5.0202699 |
| format | Article |
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V
B
−) center has shown spin-dependent fluorescence in 2D flakes or large hBN crystals, which can be manipulated at room temperature, enhancing the application scope of hBN in quantum technologies. In this work, we demonstrate the generation of this interesting spin defect in small hBN nanoparticles (NPs) with a size range of 10–50 nm. The obtained optical properties of the
V
B
− showed a photostable photoluminescence peaked at 820 nm with a spin-lattice relaxation time (T1) of 17 μs and optically detected magneto resonance (ODMR) contrast of 10%. Achieving long T1 time and high ODMR contrast is crucial for effective quantum sensing using small hBN nanocrystals. The reported spin-optical properties of the generated
V
B
− spin defect in hBN NPs are comparable to those created in bulk/flake hBN crystals. These results open the door for optimizing such spin-dependent defects in small hBN NPs for promising applications, especially in quantum sensing and biology.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0202699</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Boron ; Boron nitride ; Crystal defects ; Flakes (defects) ; Fluorescence ; Nanoparticles ; Optical properties ; Photoluminescence ; Quantum phenomena ; Relaxation time ; Room temperature ; Spin-lattice relaxation</subject><ispartof>Applied physics letters, 2024-04, Vol.124 (17)</ispartof><rights>Author(s)</rights><rights>2024 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c287t-658a1f1a552bca8fc7acc6f82cc9519a08bfcb3b50938a89c46ea1ca9e8f8f323</cites><orcidid>0000-0002-5783-0836</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0202699$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Alzahrani, Yahya A.</creatorcontrib><creatorcontrib>Alkahtani, Masfer</creatorcontrib><title>Negatively charged boron-vacancy defect in hexagonal boron nitride nanoparticles</title><title>Applied physics letters</title><description>Fluorescent defects in two-dimensional (2D) hexagonal boron nitride (hBN) crystals have attracted a great potential in quantum information and sensing technologies. In particular, the negatively charged boron vacancy (
V
B
−) center has shown spin-dependent fluorescence in 2D flakes or large hBN crystals, which can be manipulated at room temperature, enhancing the application scope of hBN in quantum technologies. In this work, we demonstrate the generation of this interesting spin defect in small hBN nanoparticles (NPs) with a size range of 10–50 nm. The obtained optical properties of the
V
B
− showed a photostable photoluminescence peaked at 820 nm with a spin-lattice relaxation time (T1) of 17 μs and optically detected magneto resonance (ODMR) contrast of 10%. Achieving long T1 time and high ODMR contrast is crucial for effective quantum sensing using small hBN nanocrystals. The reported spin-optical properties of the generated
V
B
− spin defect in hBN NPs are comparable to those created in bulk/flake hBN crystals. These results open the door for optimizing such spin-dependent defects in small hBN NPs for promising applications, especially in quantum sensing and biology.</description><subject>Boron</subject><subject>Boron nitride</subject><subject>Crystal defects</subject><subject>Flakes (defects)</subject><subject>Fluorescence</subject><subject>Nanoparticles</subject><subject>Optical properties</subject><subject>Photoluminescence</subject><subject>Quantum phenomena</subject><subject>Relaxation time</subject><subject>Room temperature</subject><subject>Spin-lattice relaxation</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp90EFLAzEQBeAgCtbqwX-w4Elha7JpdpOjFKtCUQ96DrPTpE1Zk5qkxf57V7ZnT8PAx-PxCLlmdMJoze_FhFa0qpU6ISNGm6bkjMlTMqKU8rJWgp2Ti5Q2_Ssqzkfk_dWsILu96Q4FriGuzLJoQwy-3AOCx0OxNNZgLpwv1uYHVsFDN4jCuxzd0hQefNhCzA47ky7JmYUumavjHZPP-ePH7LlcvD29zB4WJVayyWUtJDDLQIiqRZAWG0CsrawQ-5IKqGwttrwVVHEJUuG0NsAQlJFWWl7xMbkZcrcxfO9MynoTdrEvlzSnU86Vkoz26nZQGENK0Vi9je4L4kEzqv8G00IfB-vt3WATutxvEvw_-BeBAWug</recordid><startdate>20240422</startdate><enddate>20240422</enddate><creator>Alzahrani, Yahya A.</creator><creator>Alkahtani, Masfer</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5783-0836</orcidid></search><sort><creationdate>20240422</creationdate><title>Negatively charged boron-vacancy defect in hexagonal boron nitride nanoparticles</title><author>Alzahrani, Yahya A. ; Alkahtani, Masfer</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c287t-658a1f1a552bca8fc7acc6f82cc9519a08bfcb3b50938a89c46ea1ca9e8f8f323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Boron</topic><topic>Boron nitride</topic><topic>Crystal defects</topic><topic>Flakes (defects)</topic><topic>Fluorescence</topic><topic>Nanoparticles</topic><topic>Optical properties</topic><topic>Photoluminescence</topic><topic>Quantum phenomena</topic><topic>Relaxation time</topic><topic>Room temperature</topic><topic>Spin-lattice relaxation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alzahrani, Yahya A.</creatorcontrib><creatorcontrib>Alkahtani, Masfer</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alzahrani, Yahya A.</au><au>Alkahtani, Masfer</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Negatively charged boron-vacancy defect in hexagonal boron nitride nanoparticles</atitle><jtitle>Applied physics letters</jtitle><date>2024-04-22</date><risdate>2024</risdate><volume>124</volume><issue>17</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Fluorescent defects in two-dimensional (2D) hexagonal boron nitride (hBN) crystals have attracted a great potential in quantum information and sensing technologies. In particular, the negatively charged boron vacancy (
V
B
−) center has shown spin-dependent fluorescence in 2D flakes or large hBN crystals, which can be manipulated at room temperature, enhancing the application scope of hBN in quantum technologies. In this work, we demonstrate the generation of this interesting spin defect in small hBN nanoparticles (NPs) with a size range of 10–50 nm. The obtained optical properties of the
V
B
− showed a photostable photoluminescence peaked at 820 nm with a spin-lattice relaxation time (T1) of 17 μs and optically detected magneto resonance (ODMR) contrast of 10%. Achieving long T1 time and high ODMR contrast is crucial for effective quantum sensing using small hBN nanocrystals. The reported spin-optical properties of the generated
V
B
− spin defect in hBN NPs are comparable to those created in bulk/flake hBN crystals. These results open the door for optimizing such spin-dependent defects in small hBN NPs for promising applications, especially in quantum sensing and biology.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0202699</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-5783-0836</orcidid><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2024-04, Vol.124 (17) |
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| language | eng |
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| source | AIP Journals Complete |
| subjects | Boron Boron nitride Crystal defects Flakes (defects) Fluorescence Nanoparticles Optical properties Photoluminescence Quantum phenomena Relaxation time Room temperature Spin-lattice relaxation |
| title | Negatively charged boron-vacancy defect in hexagonal boron nitride nanoparticles |
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