In-Situ Single-Event Effects Detection in 22 nm FDSOI Flip-Flops

A novel Single-Event Effects (SEEs) in-situ error detection methodology is presented for high-speed radiation tolerant digital integrated circuits. Two circuit-level error detection flip-flops are presented and compared. The flip-flops can detect both Single-Event Transients (SETs) and Single-Event...

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Veröffentlicht in:	IEEE transactions on nuclear science 2024-04, Vol.71 (4), p.1-1
Hauptverfasser:	Appels, Karel, Weigand, Roland, Dehaene, Wim, Prinzie, Jeffrey
Format:	Artikel
Sprache:	eng
Schlagworte:	Clocks Delays Digital Circuits Error detection Fault detection Flip-flops Image edge detection Integrated circuits Logic gates Photon absorption Radiation Radiation Hardness by Design SEE Silicon-on-insulator Single Event Effects Single event upsets SOI (semiconductors) Transient analysis
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