In-Situ Single-Event Effects Detection in 22 nm FDSOI Flip-Flops

A novel Single-Event Effects (SEEs) in-situ error detection methodology is presented for high-speed radiation tolerant digital integrated circuits. Two circuit-level error detection flip-flops are presented and compared. The flip-flops can detect both Single-Event Transients (SETs) and Single-Event Upsets (SEUs) while embedded in a circuit. This in-situ detection allows integrated fault detection and system-level correction and provides an integrated mechanism to monitor the devices' environment. The prototypes were implemented in a 22 nm Silicon-on-Insulator (SOI) technology and are experimentally verified with two-photon absorption laser injection.