Top-Gated HfO₂-Capped InP Nanowire Photodetector With Low Noise and High Detectivity

Due to the surface oxide layer or surface defects in the preparation process of nanowires (NWs), resulting in large dark current noise and low detectivity, which seriously limits the detection performance of photodetectors. Here, we successfully synthesized high-quality single-crystalline InP NWs ut...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE photonics technology letters 2024-05, Vol.36 (10), p.657-660
Hauptverfasser:	Yu, Ranran, Gao, Xiaofeng, Fang, Suhui, Zha, Wenjing, Zou, Mijie, Deng, Jiuzhou, Yu, Xiangxiang, Jiang, Long, Cheng, Nian, Xiong, Yan, Liao, Yan-Hua, Zheng, Dingshan, Yang, Wen-Xing
Format:	Artikel
Sprache:	eng
Schlagworte:	Background noise Chemical vapor deposition Crystal defects Dark current Hafnium oxide III-V semiconductor materials Indium phosphide Infrared lasers InP nanowires LF noise Low noise Nanowires Noise Performance evaluation photodetector Photodetectors Photometers Power management Quantum efficiency Single crystals Surface defects top-gated
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!