Amorphous Gallium Oxide Nanosheets with Broad Absorption and Spin Polarization for Si‐Based UV‒Vis‒NIR Photodetectors

Achieving broad light absorption and high carrier separation efficiency is crucial for wide‐bandgap semiconductors to enable broadband photodetection applications. Here, amorphous gallium oxide nanosheets feature with broad absorption and spin polarization Wis synthesized, and assembled with graphen...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Advanced optical materials 2024-04, Vol.12 (11), p.n/a
Hauptverfasser:	Yu, Junling, Wu, Geng, Han, Xiao, Liu, Peigen, You, Su, Yang, Qing, Hong, Xun
Format:	Artikel
Sprache:	eng
Schlagworte:	amorphous nanosheet broad absorption Broadband Carrier recombination Dark current Density functional theory Electromagnetic absorption Ferromagnetism Fine structure gallium oxide Gallium oxides Graphene Hysteresis loops Nanosheets Photoluminescence Photometers Polarization (spin alignment) Separation Spectra spin polarization UV‒vis‒NIR photodetection
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!