Amorphous Gallium Oxide Nanosheets with Broad Absorption and Spin Polarization for Si‐Based UV‒Vis‒NIR Photodetectors
Achieving broad light absorption and high carrier separation efficiency is crucial for wide‐bandgap semiconductors to enable broadband photodetection applications. Here, amorphous gallium oxide nanosheets feature with broad absorption and spin polarization Wis synthesized, and assembled with graphen...
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| Veröffentlicht in: | Advanced optical materials 2024-04, Vol.12 (11), p.n/a |
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| creator | Yu, Junling Wu, Geng Han, Xiao Liu, Peigen You, Su Yang, Qing Hong, Xun |
| description | Achieving broad light absorption and high carrier separation efficiency is crucial for wide‐bandgap semiconductors to enable broadband photodetection applications. Here, amorphous gallium oxide nanosheets feature with broad absorption and spin polarization Wis synthesized, and assembled with graphene and p‐Si, realizing UV‒vis‒NIR photodetection. Extended X‐ray absorption fine structure reveals that a‐GaOx NSs possess lower tetrahedral Ga occupation (10%) compared to crystalline β‐Ga2O3 (50%). UV‒vis‒NIR diffuse reflectance spectra and magnetic hysteresis loops demonstrate broad absorption and weak ferromagnetism of a‐GaOx NSs, respectively. Density functional theory calculation further reveals sub‐gap states and spin polarization in a‐GaOx NSs. Moreover, combined with Mott–Schottky curves, photoluminescence and time‐resolved photoluminescence spectra inferred the effective suppression of carrier recombination via spin polarization of a‐GaOx NSs. The graphene/a‐GaOx NSs/p‐Si photodetector incorporates a back‐to‐back rectifying junction, acquiring a dark current as low as 63 pA. All photogenerated carriers are in the depletion region of the photodetector favouring efficient charge separation. This photodetector exhibits a response time of τrise |
| doi_str_mv | 10.1002/adom.202302410 |
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Amorphous gallium oxide nanosheets (a‐GaOx NSs) feature with broad absorption and spin polarization is synthesized, which is conducive to broad absorption and the suppression of photogenerated carrier recombination, assembled with graphene and p‐Si, realizing UV‒vis‒NIR photodetection.</description><identifier>ISSN: 2195-1071</identifier><identifier>EISSN: 2195-1071</identifier><identifier>DOI: 10.1002/adom.202302410</identifier><language>eng</language><publisher>Weinheim: Wiley Subscription Services, Inc</publisher><subject>amorphous nanosheet ; broad absorption ; Broadband ; Carrier recombination ; Dark current ; Density functional theory ; Electromagnetic absorption ; Ferromagnetism ; Fine structure ; gallium oxide ; Gallium oxides ; Graphene ; Hysteresis loops ; Nanosheets ; Photoluminescence ; Photometers ; Polarization (spin alignment) ; Separation ; Spectra ; spin polarization ; UV‒vis‒NIR photodetection</subject><ispartof>Advanced optical materials, 2024-04, Vol.12 (11), p.n/a</ispartof><rights>2024 Wiley‐VCH GmbH</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3170-fe7f1e46cb5084c58fea1f6b0ed2cea2f6bf6b4b8de2eacfe0f2a02c2d08e6f43</citedby><cites>FETCH-LOGICAL-c3170-fe7f1e46cb5084c58fea1f6b0ed2cea2f6bf6b4b8de2eacfe0f2a02c2d08e6f43</cites><orcidid>0000-0003-2784-2868 ; 0000-0001-9239-1296</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadom.202302410$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadom.202302410$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>315,781,785,1418,27928,27929,45578,45579</link.rule.ids></links><search><creatorcontrib>Yu, Junling</creatorcontrib><creatorcontrib>Wu, Geng</creatorcontrib><creatorcontrib>Han, Xiao</creatorcontrib><creatorcontrib>Liu, Peigen</creatorcontrib><creatorcontrib>You, Su</creatorcontrib><creatorcontrib>Yang, Qing</creatorcontrib><creatorcontrib>Hong, Xun</creatorcontrib><title>Amorphous Gallium Oxide Nanosheets with Broad Absorption and Spin Polarization for Si‐Based UV‒Vis‒NIR Photodetectors</title><title>Advanced optical materials</title><description>Achieving broad light absorption and high carrier separation efficiency is crucial for wide‐bandgap semiconductors to enable broadband photodetection applications. Here, amorphous gallium oxide nanosheets feature with broad absorption and spin polarization Wis synthesized, and assembled with graphene and p‐Si, realizing UV‒vis‒NIR photodetection. Extended X‐ray absorption fine structure reveals that a‐GaOx NSs possess lower tetrahedral Ga occupation (10%) compared to crystalline β‐Ga2O3 (50%). UV‒vis‒NIR diffuse reflectance spectra and magnetic hysteresis loops demonstrate broad absorption and weak ferromagnetism of a‐GaOx NSs, respectively. Density functional theory calculation further reveals sub‐gap states and spin polarization in a‐GaOx NSs. Moreover, combined with Mott–Schottky curves, photoluminescence and time‐resolved photoluminescence spectra inferred the effective suppression of carrier recombination via spin polarization of a‐GaOx NSs. The graphene/a‐GaOx NSs/p‐Si photodetector incorporates a back‐to‐back rectifying junction, acquiring a dark current as low as 63 pA. All photogenerated carriers are in the depletion region of the photodetector favouring efficient charge separation. This photodetector exhibits a response time of τrise<60 ms and τfall<120 ms, and high specific detectivity 1013 Jones over 254–1064 nm light.
Amorphous gallium oxide nanosheets (a‐GaOx NSs) feature with broad absorption and spin polarization is synthesized, which is conducive to broad absorption and the suppression of photogenerated carrier recombination, assembled with graphene and p‐Si, realizing UV‒vis‒NIR photodetection.</description><subject>amorphous nanosheet</subject><subject>broad absorption</subject><subject>Broadband</subject><subject>Carrier recombination</subject><subject>Dark current</subject><subject>Density functional theory</subject><subject>Electromagnetic absorption</subject><subject>Ferromagnetism</subject><subject>Fine structure</subject><subject>gallium oxide</subject><subject>Gallium oxides</subject><subject>Graphene</subject><subject>Hysteresis loops</subject><subject>Nanosheets</subject><subject>Photoluminescence</subject><subject>Photometers</subject><subject>Polarization (spin alignment)</subject><subject>Separation</subject><subject>Spectra</subject><subject>spin polarization</subject><subject>UV‒vis‒NIR photodetection</subject><issn>2195-1071</issn><issn>2195-1071</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNqFkM9OwkAQxhujiQS5et7EMzi7LbQcARVJEIgI12bbnQ1LShd32yB64RGMj8iTuIhRbyaT-ZffN5N8nndJoUEB2DUXetVgwHxgAYUTr8Jou1mnENLTP_25V7N2CQBu8NtBWPHeOitt1gtdWtLnWabKFRm_KIFkxHNtF4iFJRtVLEjXaC5IJ7EOL5TOCc8Fma5VTiY640a98q-t1IZM1X733uUWBZnN97uPubIujwaPZLLQhRZYYFpoYy-8M8kzi7XvWvVmd7dPvfv6cNwf9DrDeurTEOoSQ0kxaKVJE6IgbUYSOZWtBFCwFDlzrYsgiQQy5KlEkIwDS5mACFsy8Kve1fHu2ujnEm0RL3Vpcvcy9sGPfIhCnzqqcaRSo601KOO1UStutjGF-OBxfPA4_vHYCdpHwUZluP2Hjjs344df7Sdpm4WS</recordid><startdate>20240401</startdate><enddate>20240401</enddate><creator>Yu, Junling</creator><creator>Wu, Geng</creator><creator>Han, Xiao</creator><creator>Liu, Peigen</creator><creator>You, Su</creator><creator>Yang, Qing</creator><creator>Hong, Xun</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2784-2868</orcidid><orcidid>https://orcid.org/0000-0001-9239-1296</orcidid></search><sort><creationdate>20240401</creationdate><title>Amorphous Gallium Oxide Nanosheets with Broad Absorption and Spin Polarization for Si‐Based UV‒Vis‒NIR Photodetectors</title><author>Yu, Junling ; Wu, Geng ; Han, Xiao ; Liu, Peigen ; You, Su ; Yang, Qing ; Hong, Xun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3170-fe7f1e46cb5084c58fea1f6b0ed2cea2f6bf6b4b8de2eacfe0f2a02c2d08e6f43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>amorphous nanosheet</topic><topic>broad absorption</topic><topic>Broadband</topic><topic>Carrier recombination</topic><topic>Dark current</topic><topic>Density functional theory</topic><topic>Electromagnetic absorption</topic><topic>Ferromagnetism</topic><topic>Fine structure</topic><topic>gallium oxide</topic><topic>Gallium oxides</topic><topic>Graphene</topic><topic>Hysteresis loops</topic><topic>Nanosheets</topic><topic>Photoluminescence</topic><topic>Photometers</topic><topic>Polarization (spin alignment)</topic><topic>Separation</topic><topic>Spectra</topic><topic>spin polarization</topic><topic>UV‒vis‒NIR photodetection</topic><toplevel>online_resources</toplevel><creatorcontrib>Yu, Junling</creatorcontrib><creatorcontrib>Wu, Geng</creatorcontrib><creatorcontrib>Han, Xiao</creatorcontrib><creatorcontrib>Liu, Peigen</creatorcontrib><creatorcontrib>You, Su</creatorcontrib><creatorcontrib>Yang, Qing</creatorcontrib><creatorcontrib>Hong, Xun</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Advanced optical materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yu, Junling</au><au>Wu, Geng</au><au>Han, Xiao</au><au>Liu, Peigen</au><au>You, Su</au><au>Yang, Qing</au><au>Hong, Xun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Amorphous Gallium Oxide Nanosheets with Broad Absorption and Spin Polarization for Si‐Based UV‒Vis‒NIR Photodetectors</atitle><jtitle>Advanced optical materials</jtitle><date>2024-04-01</date><risdate>2024</risdate><volume>12</volume><issue>11</issue><epage>n/a</epage><issn>2195-1071</issn><eissn>2195-1071</eissn><abstract>Achieving broad light absorption and high carrier separation efficiency is crucial for wide‐bandgap semiconductors to enable broadband photodetection applications. Here, amorphous gallium oxide nanosheets feature with broad absorption and spin polarization Wis synthesized, and assembled with graphene and p‐Si, realizing UV‒vis‒NIR photodetection. Extended X‐ray absorption fine structure reveals that a‐GaOx NSs possess lower tetrahedral Ga occupation (10%) compared to crystalline β‐Ga2O3 (50%). UV‒vis‒NIR diffuse reflectance spectra and magnetic hysteresis loops demonstrate broad absorption and weak ferromagnetism of a‐GaOx NSs, respectively. Density functional theory calculation further reveals sub‐gap states and spin polarization in a‐GaOx NSs. Moreover, combined with Mott–Schottky curves, photoluminescence and time‐resolved photoluminescence spectra inferred the effective suppression of carrier recombination via spin polarization of a‐GaOx NSs. The graphene/a‐GaOx NSs/p‐Si photodetector incorporates a back‐to‐back rectifying junction, acquiring a dark current as low as 63 pA. All photogenerated carriers are in the depletion region of the photodetector favouring efficient charge separation. This photodetector exhibits a response time of τrise<60 ms and τfall<120 ms, and high specific detectivity 1013 Jones over 254–1064 nm light.
Amorphous gallium oxide nanosheets (a‐GaOx NSs) feature with broad absorption and spin polarization is synthesized, which is conducive to broad absorption and the suppression of photogenerated carrier recombination, assembled with graphene and p‐Si, realizing UV‒vis‒NIR photodetection.</abstract><cop>Weinheim</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/adom.202302410</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-2784-2868</orcidid><orcidid>https://orcid.org/0000-0001-9239-1296</orcidid></addata></record> |
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| subjects | amorphous nanosheet broad absorption Broadband Carrier recombination Dark current Density functional theory Electromagnetic absorption Ferromagnetism Fine structure gallium oxide Gallium oxides Graphene Hysteresis loops Nanosheets Photoluminescence Photometers Polarization (spin alignment) Separation Spectra spin polarization UV‒vis‒NIR photodetection |
| title | Amorphous Gallium Oxide Nanosheets with Broad Absorption and Spin Polarization for Si‐Based UV‒Vis‒NIR Photodetectors |
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