Enhancing ZnO/Si heterojunction photodetector performance for ultra high responsivity across wide spectral range

This study outlines strategies for the development of an ultra-high responsivity wide band ZnO/Si-based heterojunction photodetector (PD). The incorporation of a UV-enhanced Si-Photodiode introduces a novel approach to enhance PD performance and functionality, offering potential building blocks for...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2024-04, Vol.35 (11), p.756, Article 756
Hauptverfasser:	Ratnesh, Ratneshwar Kumar, Singh, Mrityunjay Kumar, Singh, Jay
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemical vapor deposition Chemistry and Materials Science Dark current Electrons Heterojunctions Materials Science Molecular beam epitaxy Nanoparticles Optical and Electronic Materials Optical properties Optoelectronic devices Photodiodes Photometers Photonics Quantum efficiency Semiconductors Thin films Zinc oxide Zinc oxides
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