Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures
The reduction of the defect density in quantum wells (QWs) is important to maximize the internal quantum efficiency. We investigate non-radiative recombination in GaInN/GaN single QWs (SQWs) grown on In-free and In-containing so-called underlayers (ULs). The non-radiative lifetime of SQWs increases...
Gespeichert in:
| Veröffentlicht in: | AIP advances 2024-04, Vol.14 (4), p.045122-045122-6 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 045122-6 |
|---|---|
| container_issue | 4 |
| container_start_page | 045122 |
| container_title | AIP advances |
| container_volume | 14 |
| creator | de Vasconcellos Lourenço, R. Horenburg, P. Farr, P. Bremers, H. Rossow, U. Hangleiter, A. |
| description | The reduction of the defect density in quantum wells (QWs) is important to maximize the internal quantum efficiency. We investigate non-radiative recombination in GaInN/GaN single QWs (SQWs) grown on In-free and In-containing so-called underlayers (ULs). The non-radiative lifetime of SQWs increases with increasing UL thickness and decreases exponentially with increasing UL growth temperature. Moreover, the presence of low-temperature UL strongly increases the non-radiative lifetime of SQWs. As non-radiative recombination at threading dislocations is efficiently suppressed by means of V-pits, our results suggest that point defects diffuse from the high temperature buffer layer through the UL into the QW. The resulting point defect density in the QW is strongly influenced by the UL growth conditions. |
| doi_str_mv | 10.1063/5.0187072 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_proquest_journals_3035288502</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_d11d20b5aa4d438588859072b9888dd3</doaj_id><sourcerecordid>3035288502</sourcerecordid><originalsourceid>FETCH-LOGICAL-c353t-dc005e6b3bdc3cfd4a6dc3de3bd36575f290baebb14ea6d87ac2c223164719483</originalsourceid><addsrcrecordid>eNp9kUtLAzEUhYMoWGoX_oOAK4Vp85jMZJZStBakLqrrkMmjpLSTNsko_nujU8SV2dyTm49zw7kAXGM0xaiiMzZFmNeoJmdgRDDjBSWkOv-jL8Ekxi3Kp2ww4uUIrNcp-G4DzbvTplMGWh-gdtb20fkOegsP3nUJamONShG6Di7kslvNFnIFj73sUr-HH2a3gzGFXqU-mHgFLqzcRTM51TF4e3x4nT8Vzy-L5fz-uVCU0VRohRAzVUtbraiyupRVFtrkO61YzSxpUCtN2-LS5CdeS0UUIRRXZY2bktMxWA6-2sutOAS3l-FTeOnET8OHjZAhObUzQmOsCWqZlKUuKWecc9bkoNomK61p9roZvA7BH3sTk9j6PnT5-4IiykjmEcnU7UCp4GMMxv5OxUh8r0AwcVpBZu8GNiqXZMpp_gN_AcD9hJU</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3035288502</pqid></control><display><type>article</type><title>Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures</title><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Free Full-Text Journals in Chemistry</source><creator>de Vasconcellos Lourenço, R. ; Horenburg, P. ; Farr, P. ; Bremers, H. ; Rossow, U. ; Hangleiter, A.</creator><creatorcontrib>de Vasconcellos Lourenço, R. ; Horenburg, P. ; Farr, P. ; Bremers, H. ; Rossow, U. ; Hangleiter, A.</creatorcontrib><description>The reduction of the defect density in quantum wells (QWs) is important to maximize the internal quantum efficiency. We investigate non-radiative recombination in GaInN/GaN single QWs (SQWs) grown on In-free and In-containing so-called underlayers (ULs). The non-radiative lifetime of SQWs increases with increasing UL thickness and decreases exponentially with increasing UL growth temperature. Moreover, the presence of low-temperature UL strongly increases the non-radiative lifetime of SQWs. As non-radiative recombination at threading dislocations is efficiently suppressed by means of V-pits, our results suggest that point defects diffuse from the high temperature buffer layer through the UL into the QW. The resulting point defect density in the QW is strongly influenced by the UL growth conditions.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/5.0187072</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Buffer layers ; Density ; High temperature ; Low temperature ; Point defects ; Quantum efficiency ; Quantum wells ; Radiative lifetime ; Radiative recombination ; Threading dislocations</subject><ispartof>AIP advances, 2024-04, Vol.14 (4), p.045122-045122-6</ispartof><rights>Author(s)</rights><rights>2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c353t-dc005e6b3bdc3cfd4a6dc3de3bd36575f290baebb14ea6d87ac2c223164719483</cites><orcidid>0000-0001-7382-2177 ; 0000-0002-8668-1227 ; 0009-0007-1879-5349 ; 0000-0002-7749-0584 ; 0000-0002-9183-9666 ; 0009-0009-3594-6254</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,864,2102,27924,27925</link.rule.ids></links><search><creatorcontrib>de Vasconcellos Lourenço, R.</creatorcontrib><creatorcontrib>Horenburg, P.</creatorcontrib><creatorcontrib>Farr, P.</creatorcontrib><creatorcontrib>Bremers, H.</creatorcontrib><creatorcontrib>Rossow, U.</creatorcontrib><creatorcontrib>Hangleiter, A.</creatorcontrib><title>Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures</title><title>AIP advances</title><description>The reduction of the defect density in quantum wells (QWs) is important to maximize the internal quantum efficiency. We investigate non-radiative recombination in GaInN/GaN single QWs (SQWs) grown on In-free and In-containing so-called underlayers (ULs). The non-radiative lifetime of SQWs increases with increasing UL thickness and decreases exponentially with increasing UL growth temperature. Moreover, the presence of low-temperature UL strongly increases the non-radiative lifetime of SQWs. As non-radiative recombination at threading dislocations is efficiently suppressed by means of V-pits, our results suggest that point defects diffuse from the high temperature buffer layer through the UL into the QW. The resulting point defect density in the QW is strongly influenced by the UL growth conditions.</description><subject>Buffer layers</subject><subject>Density</subject><subject>High temperature</subject><subject>Low temperature</subject><subject>Point defects</subject><subject>Quantum efficiency</subject><subject>Quantum wells</subject><subject>Radiative lifetime</subject><subject>Radiative recombination</subject><subject>Threading dislocations</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kUtLAzEUhYMoWGoX_oOAK4Vp85jMZJZStBakLqrrkMmjpLSTNsko_nujU8SV2dyTm49zw7kAXGM0xaiiMzZFmNeoJmdgRDDjBSWkOv-jL8Ekxi3Kp2ww4uUIrNcp-G4DzbvTplMGWh-gdtb20fkOegsP3nUJamONShG6Di7kslvNFnIFj73sUr-HH2a3gzGFXqU-mHgFLqzcRTM51TF4e3x4nT8Vzy-L5fz-uVCU0VRohRAzVUtbraiyupRVFtrkO61YzSxpUCtN2-LS5CdeS0UUIRRXZY2bktMxWA6-2sutOAS3l-FTeOnET8OHjZAhObUzQmOsCWqZlKUuKWecc9bkoNomK61p9roZvA7BH3sTk9j6PnT5-4IiykjmEcnU7UCp4GMMxv5OxUh8r0AwcVpBZu8GNiqXZMpp_gN_AcD9hJU</recordid><startdate>20240401</startdate><enddate>20240401</enddate><creator>de Vasconcellos Lourenço, R.</creator><creator>Horenburg, P.</creator><creator>Farr, P.</creator><creator>Bremers, H.</creator><creator>Rossow, U.</creator><creator>Hangleiter, A.</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0001-7382-2177</orcidid><orcidid>https://orcid.org/0000-0002-8668-1227</orcidid><orcidid>https://orcid.org/0009-0007-1879-5349</orcidid><orcidid>https://orcid.org/0000-0002-7749-0584</orcidid><orcidid>https://orcid.org/0000-0002-9183-9666</orcidid><orcidid>https://orcid.org/0009-0009-3594-6254</orcidid></search><sort><creationdate>20240401</creationdate><title>Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures</title><author>de Vasconcellos Lourenço, R. ; Horenburg, P. ; Farr, P. ; Bremers, H. ; Rossow, U. ; Hangleiter, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-dc005e6b3bdc3cfd4a6dc3de3bd36575f290baebb14ea6d87ac2c223164719483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Buffer layers</topic><topic>Density</topic><topic>High temperature</topic><topic>Low temperature</topic><topic>Point defects</topic><topic>Quantum efficiency</topic><topic>Quantum wells</topic><topic>Radiative lifetime</topic><topic>Radiative recombination</topic><topic>Threading dislocations</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>de Vasconcellos Lourenço, R.</creatorcontrib><creatorcontrib>Horenburg, P.</creatorcontrib><creatorcontrib>Farr, P.</creatorcontrib><creatorcontrib>Bremers, H.</creatorcontrib><creatorcontrib>Rossow, U.</creatorcontrib><creatorcontrib>Hangleiter, A.</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>de Vasconcellos Lourenço, R.</au><au>Horenburg, P.</au><au>Farr, P.</au><au>Bremers, H.</au><au>Rossow, U.</au><au>Hangleiter, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures</atitle><jtitle>AIP advances</jtitle><date>2024-04-01</date><risdate>2024</risdate><volume>14</volume><issue>4</issue><spage>045122</spage><epage>045122-6</epage><pages>045122-045122-6</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>The reduction of the defect density in quantum wells (QWs) is important to maximize the internal quantum efficiency. We investigate non-radiative recombination in GaInN/GaN single QWs (SQWs) grown on In-free and In-containing so-called underlayers (ULs). The non-radiative lifetime of SQWs increases with increasing UL thickness and decreases exponentially with increasing UL growth temperature. Moreover, the presence of low-temperature UL strongly increases the non-radiative lifetime of SQWs. As non-radiative recombination at threading dislocations is efficiently suppressed by means of V-pits, our results suggest that point defects diffuse from the high temperature buffer layer through the UL into the QW. The resulting point defect density in the QW is strongly influenced by the UL growth conditions.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0187072</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-7382-2177</orcidid><orcidid>https://orcid.org/0000-0002-8668-1227</orcidid><orcidid>https://orcid.org/0009-0007-1879-5349</orcidid><orcidid>https://orcid.org/0000-0002-7749-0584</orcidid><orcidid>https://orcid.org/0000-0002-9183-9666</orcidid><orcidid>https://orcid.org/0009-0009-3594-6254</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2158-3226 |
| ispartof | AIP advances, 2024-04, Vol.14 (4), p.045122-045122-6 |
| issn | 2158-3226 2158-3226 |
| language | eng |
| recordid | cdi_proquest_journals_3035288502 |
| source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Free Full-Text Journals in Chemistry |
| subjects | Buffer layers Density High temperature Low temperature Point defects Quantum efficiency Quantum wells Radiative lifetime Radiative recombination Threading dislocations |
| title | Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T22%3A17%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Strong%20evidence%20for%20diffusion%20of%20point%20defects%20in%20GaInN/GaN%20quantum%20well%20structures&rft.jtitle=AIP%20advances&rft.au=de%20Vasconcellos%20Louren%C3%A7o,%20R.&rft.date=2024-04-01&rft.volume=14&rft.issue=4&rft.spage=045122&rft.epage=045122-6&rft.pages=045122-045122-6&rft.issn=2158-3226&rft.eissn=2158-3226&rft.coden=AAIDBI&rft_id=info:doi/10.1063/5.0187072&rft_dat=%3Cproquest_scita%3E3035288502%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3035288502&rft_id=info:pmid/&rft_doaj_id=oai_doaj_org_article_d11d20b5aa4d438588859072b9888dd3&rfr_iscdi=true |