Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification
In this article, a novel equivalent current model of Schottky diode loss is proposed to guide the design of microwave rectifiers and semiconductor devices. The model employs an equivalent forward current equation based on charge conservation and Kirchhoff's voltage law to achieve an accurate ca...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2024-04, Vol.72 (4), p.2310-2317 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2317 |
|---|---|
| container_issue | 4 |
| container_start_page | 2310 |
| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 72 |
| creator | Liu, Tao Li, Yang Wang, Ting-Ting Wang, Xiao Huang, Ren-Pin Li, Qiu-Xuan Yang, Lin-An Ao, Jin-Ping Hao, Yue |
| description | In this article, a novel equivalent current model of Schottky diode loss is proposed to guide the design of microwave rectifiers and semiconductor devices. The model employs an equivalent forward current equation based on charge conservation and Kirchhoff's voltage law to achieve an accurate calculation of the diode's turn-on period and losses under the influence of current harmonics. The estimation from the proposed model is compared with the results from harmonic balance simulation and the resultant error is within 1%. Once the diode's SPICE parameters, working frequency, load resistance, and input power are given, the maximum efficiency of the rectifier circuit can be accurately predicted. Guided by the proposed model, a GaN diode and a rectifier were designed and fabricated to operate at 915 MHz. The measured maximum conversion efficiency reaches 92.3% when the input power is 23 dBm. The high-efficiency power range (efficiency \ge80 %) and the load bandwidth (efficiency \ge50 %) are extended from 16.5 to 25 dBm and from 700 to 7400~\Omega , respectively. The consistency between the test and the calculated results validates the effectiveness of the proposed model. |
| doi_str_mv | 10.1109/TMTT.2023.3340263 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_3033621982</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10363643</ieee_id><sourcerecordid>3033621982</sourcerecordid><originalsourceid>FETCH-LOGICAL-c246t-7c457832cfaa8a8ed019d60ec9746fa855abd4c480745b382e6660d77f299fec3</originalsourceid><addsrcrecordid>eNpNkE1LAzEQhoMoWKs_QPCw4HlrvjYfRy21FdoKsp5Dmp1oSt1ts9tK_71Z2oOnYWbed-blQeie4BEhWD-Vi7IcUUzZiDGOqWAXaECKQuZaSHyJBhgTlWuu8DW6adt1anmB1QCVy-YAm2yy24eD3UDdZeN9jH1dNFVa-CZmU7vMX2wLVTYLX9_5xPvgAtTumC2Ci82vPUD2Aa4LaW670NS36MrbTQt35zpEn6-TcjzL5-_Tt_HzPHeUiy6XjhdSMeq8tcoqqDDRlcDgtOTCW1UUdlVxl0JLXqyYoiCEwJWUnmrtwbEhejzd3cZmt4e2M-tmH-v00jDMmKBEK5pU5KRKWds2gjfbGH5sPBqCTQ_P9PBMD8-c4SXPw8kTAOCfngkmOGN_IRtqzA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3033621982</pqid></control><display><type>article</type><title>Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification</title><source>IEEE Electronic Library (IEL)</source><creator>Liu, Tao ; Li, Yang ; Wang, Ting-Ting ; Wang, Xiao ; Huang, Ren-Pin ; Li, Qiu-Xuan ; Yang, Lin-An ; Ao, Jin-Ping ; Hao, Yue</creator><creatorcontrib>Liu, Tao ; Li, Yang ; Wang, Ting-Ting ; Wang, Xiao ; Huang, Ren-Pin ; Li, Qiu-Xuan ; Yang, Lin-An ; Ao, Jin-Ping ; Hao, Yue</creatorcontrib><description><![CDATA[In this article, a novel equivalent current model of Schottky diode loss is proposed to guide the design of microwave rectifiers and semiconductor devices. The model employs an equivalent forward current equation based on charge conservation and Kirchhoff's voltage law to achieve an accurate calculation of the diode's turn-on period and losses under the influence of current harmonics. The estimation from the proposed model is compared with the results from harmonic balance simulation and the resultant error is within 1%. Once the diode's SPICE parameters, working frequency, load resistance, and input power are given, the maximum efficiency of the rectifier circuit can be accurately predicted. Guided by the proposed model, a GaN diode and a rectifier were designed and fabricated to operate at 915 MHz. The measured maximum conversion efficiency reaches 92.3% when the input power is 23 dBm. The high-efficiency power range (efficiency <inline-formula> <tex-math notation="LaTeX">\ge80 </tex-math></inline-formula>%) and the load bandwidth (efficiency <inline-formula> <tex-math notation="LaTeX">\ge50 </tex-math></inline-formula>%) are extended from 16.5 to 25 dBm and from 700 to <inline-formula> <tex-math notation="LaTeX">7400~\Omega </tex-math></inline-formula>, respectively. The consistency between the test and the calculated results validates the effectiveness of the proposed model.]]></description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2023.3340263</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Efficiency ; Energy conversion efficiency ; Equivalence ; Equivalent current model ; gallium nitride (GaN) ; Gallium nitrides ; Harmonic analysis ; Harmonics ; Junctions ; Load modeling ; Load resistance ; Mathematical models ; Microwave circuits ; rectification ; Rectifiers ; Schottky barrier diode (SBD) ; Schottky diodes ; Semiconductor devices ; wireless power transmission (WPT)</subject><ispartof>IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2310-2317</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c246t-7c457832cfaa8a8ed019d60ec9746fa855abd4c480745b382e6660d77f299fec3</cites><orcidid>0000-0001-5048-2616 ; 0000-0003-1685-0168 ; 0000-0002-8437-0134 ; 0000-0002-8081-2919 ; 0000-0003-4103-9422 ; 0000-0003-1658-0970</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10363643$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10363643$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Liu, Tao</creatorcontrib><creatorcontrib>Li, Yang</creatorcontrib><creatorcontrib>Wang, Ting-Ting</creatorcontrib><creatorcontrib>Wang, Xiao</creatorcontrib><creatorcontrib>Huang, Ren-Pin</creatorcontrib><creatorcontrib>Li, Qiu-Xuan</creatorcontrib><creatorcontrib>Yang, Lin-An</creatorcontrib><creatorcontrib>Ao, Jin-Ping</creatorcontrib><creatorcontrib>Hao, Yue</creatorcontrib><title>Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description><![CDATA[In this article, a novel equivalent current model of Schottky diode loss is proposed to guide the design of microwave rectifiers and semiconductor devices. The model employs an equivalent forward current equation based on charge conservation and Kirchhoff's voltage law to achieve an accurate calculation of the diode's turn-on period and losses under the influence of current harmonics. The estimation from the proposed model is compared with the results from harmonic balance simulation and the resultant error is within 1%. Once the diode's SPICE parameters, working frequency, load resistance, and input power are given, the maximum efficiency of the rectifier circuit can be accurately predicted. Guided by the proposed model, a GaN diode and a rectifier were designed and fabricated to operate at 915 MHz. The measured maximum conversion efficiency reaches 92.3% when the input power is 23 dBm. The high-efficiency power range (efficiency <inline-formula> <tex-math notation="LaTeX">\ge80 </tex-math></inline-formula>%) and the load bandwidth (efficiency <inline-formula> <tex-math notation="LaTeX">\ge50 </tex-math></inline-formula>%) are extended from 16.5 to 25 dBm and from 700 to <inline-formula> <tex-math notation="LaTeX">7400~\Omega </tex-math></inline-formula>, respectively. The consistency between the test and the calculated results validates the effectiveness of the proposed model.]]></description><subject>Efficiency</subject><subject>Energy conversion efficiency</subject><subject>Equivalence</subject><subject>Equivalent current model</subject><subject>gallium nitride (GaN)</subject><subject>Gallium nitrides</subject><subject>Harmonic analysis</subject><subject>Harmonics</subject><subject>Junctions</subject><subject>Load modeling</subject><subject>Load resistance</subject><subject>Mathematical models</subject><subject>Microwave circuits</subject><subject>rectification</subject><subject>Rectifiers</subject><subject>Schottky barrier diode (SBD)</subject><subject>Schottky diodes</subject><subject>Semiconductor devices</subject><subject>wireless power transmission (WPT)</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkE1LAzEQhoMoWKs_QPCw4HlrvjYfRy21FdoKsp5Dmp1oSt1ts9tK_71Z2oOnYWbed-blQeie4BEhWD-Vi7IcUUzZiDGOqWAXaECKQuZaSHyJBhgTlWuu8DW6adt1anmB1QCVy-YAm2yy24eD3UDdZeN9jH1dNFVa-CZmU7vMX2wLVTYLX9_5xPvgAtTumC2Ci82vPUD2Aa4LaW670NS36MrbTQt35zpEn6-TcjzL5-_Tt_HzPHeUiy6XjhdSMeq8tcoqqDDRlcDgtOTCW1UUdlVxl0JLXqyYoiCEwJWUnmrtwbEhejzd3cZmt4e2M-tmH-v00jDMmKBEK5pU5KRKWds2gjfbGH5sPBqCTQ_P9PBMD8-c4SXPw8kTAOCfngkmOGN_IRtqzA</recordid><startdate>20240401</startdate><enddate>20240401</enddate><creator>Liu, Tao</creator><creator>Li, Yang</creator><creator>Wang, Ting-Ting</creator><creator>Wang, Xiao</creator><creator>Huang, Ren-Pin</creator><creator>Li, Qiu-Xuan</creator><creator>Yang, Lin-An</creator><creator>Ao, Jin-Ping</creator><creator>Hao, Yue</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5048-2616</orcidid><orcidid>https://orcid.org/0000-0003-1685-0168</orcidid><orcidid>https://orcid.org/0000-0002-8437-0134</orcidid><orcidid>https://orcid.org/0000-0002-8081-2919</orcidid><orcidid>https://orcid.org/0000-0003-4103-9422</orcidid><orcidid>https://orcid.org/0000-0003-1658-0970</orcidid></search><sort><creationdate>20240401</creationdate><title>Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification</title><author>Liu, Tao ; Li, Yang ; Wang, Ting-Ting ; Wang, Xiao ; Huang, Ren-Pin ; Li, Qiu-Xuan ; Yang, Lin-An ; Ao, Jin-Ping ; Hao, Yue</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c246t-7c457832cfaa8a8ed019d60ec9746fa855abd4c480745b382e6660d77f299fec3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Efficiency</topic><topic>Energy conversion efficiency</topic><topic>Equivalence</topic><topic>Equivalent current model</topic><topic>gallium nitride (GaN)</topic><topic>Gallium nitrides</topic><topic>Harmonic analysis</topic><topic>Harmonics</topic><topic>Junctions</topic><topic>Load modeling</topic><topic>Load resistance</topic><topic>Mathematical models</topic><topic>Microwave circuits</topic><topic>rectification</topic><topic>Rectifiers</topic><topic>Schottky barrier diode (SBD)</topic><topic>Schottky diodes</topic><topic>Semiconductor devices</topic><topic>wireless power transmission (WPT)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Tao</creatorcontrib><creatorcontrib>Li, Yang</creatorcontrib><creatorcontrib>Wang, Ting-Ting</creatorcontrib><creatorcontrib>Wang, Xiao</creatorcontrib><creatorcontrib>Huang, Ren-Pin</creatorcontrib><creatorcontrib>Li, Qiu-Xuan</creatorcontrib><creatorcontrib>Yang, Lin-An</creatorcontrib><creatorcontrib>Ao, Jin-Ping</creatorcontrib><creatorcontrib>Hao, Yue</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Liu, Tao</au><au>Li, Yang</au><au>Wang, Ting-Ting</au><au>Wang, Xiao</au><au>Huang, Ren-Pin</au><au>Li, Qiu-Xuan</au><au>Yang, Lin-An</au><au>Ao, Jin-Ping</au><au>Hao, Yue</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2024-04-01</date><risdate>2024</risdate><volume>72</volume><issue>4</issue><spage>2310</spage><epage>2317</epage><pages>2310-2317</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract><![CDATA[In this article, a novel equivalent current model of Schottky diode loss is proposed to guide the design of microwave rectifiers and semiconductor devices. The model employs an equivalent forward current equation based on charge conservation and Kirchhoff's voltage law to achieve an accurate calculation of the diode's turn-on period and losses under the influence of current harmonics. The estimation from the proposed model is compared with the results from harmonic balance simulation and the resultant error is within 1%. Once the diode's SPICE parameters, working frequency, load resistance, and input power are given, the maximum efficiency of the rectifier circuit can be accurately predicted. Guided by the proposed model, a GaN diode and a rectifier were designed and fabricated to operate at 915 MHz. The measured maximum conversion efficiency reaches 92.3% when the input power is 23 dBm. The high-efficiency power range (efficiency <inline-formula> <tex-math notation="LaTeX">\ge80 </tex-math></inline-formula>%) and the load bandwidth (efficiency <inline-formula> <tex-math notation="LaTeX">\ge50 </tex-math></inline-formula>%) are extended from 16.5 to 25 dBm and from 700 to <inline-formula> <tex-math notation="LaTeX">7400~\Omega </tex-math></inline-formula>, respectively. The consistency between the test and the calculated results validates the effectiveness of the proposed model.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMTT.2023.3340263</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-5048-2616</orcidid><orcidid>https://orcid.org/0000-0003-1685-0168</orcidid><orcidid>https://orcid.org/0000-0002-8437-0134</orcidid><orcidid>https://orcid.org/0000-0002-8081-2919</orcidid><orcidid>https://orcid.org/0000-0003-4103-9422</orcidid><orcidid>https://orcid.org/0000-0003-1658-0970</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2310-2317 |
| issn | 0018-9480 1557-9670 |
| language | eng |
| recordid | cdi_proquest_journals_3033621982 |
| source | IEEE Electronic Library (IEL) |
| subjects | Efficiency Energy conversion efficiency Equivalence Equivalent current model gallium nitride (GaN) Gallium nitrides Harmonic analysis Harmonics Junctions Load modeling Load resistance Mathematical models Microwave circuits rectification Rectifiers Schottky barrier diode (SBD) Schottky diodes Semiconductor devices wireless power transmission (WPT) |
| title | Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T07%3A52%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Novel%20Equivalent%20Current%20Model%20for%20GaN-Based%20High-Efficiency%20Microwave%20Rectification&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Liu,%20Tao&rft.date=2024-04-01&rft.volume=72&rft.issue=4&rft.spage=2310&rft.epage=2317&rft.pages=2310-2317&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.2023.3340263&rft_dat=%3Cproquest_RIE%3E3033621982%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3033621982&rft_id=info:pmid/&rft_ieee_id=10363643&rfr_iscdi=true |