Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light‐Emitting Transistors (Adv. Mater. 14/2024)

Electrically Confined Electroluminescence In article number 2310498, Gwan‐Hyoung Lee and co‐workers demonstrate electrically confined electroluminescence of neutral excitons in WSe2 light‐emitting transistors (LETs). By achieving balanced concentrations of injected electrons and holes, and confining...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2024-04, Vol.36 (14), p.n/a
Hauptverfasser: Shin, June‐Chul, Jeong, Jae Hwan, Kwon, Junyoung, Kim, Yeon Ho, Kim, Bumho, Woo, Seung‐Je, Woo, Kie Young, Cho, Minhyun, Watanabe, Kenji, Taniguchi, Takashi, Kim, Young Duck, Cho, Yong‐Hoon, Lee, Tae‐Woo, Hone, James, Lee, Chul‐Ho, Lee, Gwan‐Hyoung
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Electrically Confined Electroluminescence In article number 2310498, Gwan‐Hyoung Lee and co‐workers demonstrate electrically confined electroluminescence of neutral excitons in WSe2 light‐emitting transistors (LETs). By achieving balanced concentrations of injected electrons and holes, and confining neutral exciton within the 1D region, the WSe2 LETs exhibit strong electroluminescence with a high external quantum efficiency (EQE) of ≈8.2% at room temperature, which will be a promising approach to enhancing the EQE and modulating exciton complexes for 2D excitonic devices.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.202470106