Identifying the charge states of carbon vacancies in 4H-SiC by ab initio metadynamics

4H Silicon carbide (4H-SiC) is widely recognized as a highly promising material for high-voltage and high-power electronic applications due to its exceptional properties. The performance of devices based on 4H-SiC is often weakened by the presence of carbon-related point defects, particularly carbon...

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Veröffentlicht in:	Journal of applied physics 2024-04, Vol.135 (13)
Hauptverfasser:	Huang, Yuanchao, Jiang, Xuanyu, Deng, Tianqi, Yang, Deren, Pi, Xiaodong
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Point defects Potential energy Silicon carbide Vanadium carbide
Online-Zugang:	Volltext
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