Effect of 2 MeV Electron Irradiation on the Electronic Structure and Photoluminescence of SiC

Silicon carbide (SiC) with the advantages of high thermal conductivity and high breakdown field strength can meet the new requirements of modern electronic technology for harsh conditions. Focusing on the application of deep space exploration, the present work has explored the effects of 2-MeV elect...

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Veröffentlicht in:	Journal of electronic materials 2024-05, Vol.53 (5), p.2421-2428
Hauptverfasser:	Chang, Wenjing, Cao, Rongxing, Wang, Kejia, Xue, Yuxiong, Zeng, Xianghua
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Crystal defects Crystallization Deep space Electron irradiation Electronic structure Electronics and Microelectronics Field strength Fluence Instrumentation Materials Science Optical and Electronic Materials Original Research Article Photoelectrons Photoluminescence Raman spectra Silicon carbide Solid State Physics Space exploration Spectrum analysis Temperature effects Thermal conductivity X ray photoelectron spectroscopy
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