p-Si/n-CrSe2 Heterojunctions Designed as High-Frequency Capacitors and Photosensors

In this work, polycrystalline n -CrSe 2 nanosheets with thickness of 100 nm are grown on p -type Si wafers by the thermal deposition technique under vacuum pressure of 10 −5 mbar. Structural and optical investigations showed the preferred growth of the trigonal phase of CrSe 2 on Si substrates. Dire...

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