4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars

A novel structure of a silicon carbide (SiC) double-trench metal oxide semiconductor field-effect transistor (DTMOSFET) is proposed using a hafnium silicate (HfSiO x ) dielectric combined with PN pillars. Moreover, it has been characterized using Atlas TCAD Silvaco 2D simulations, and offers a very...

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Veröffentlicht in:	Journal of electronic materials 2024-05, Vol.53 (5), p.2601-2608
Hauptverfasser:	Fletcher, A. S. Augustine, Franklin, S. Angen, Murugapandiyan, P., Ajayan, J., Nirmal, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown Characterization and Evaluation of Materials Chemistry and Materials Science Dielectrics Electric fields Electric potential Electronics and Microelectronics Field effect transistors Instrumentation Materials Science Metal oxide semiconductors MOSFETs Optical and Electronic Materials Original Research Article Semiconductor devices Silicon carbide Silicon dioxide Solid State Physics Transconductance Voltage
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