A comparative study of impact ionization and avalanche multiplication in InAs, HgCdTe, and InAlAs/InAsSb superlattice

We use an ensemble Monte Carlo transport approach to calculate and compare the impact ionization and avalanche photodiode excess noise characteristics in three materials—a band-engineered InAlAs/InAsSb type-II superlattice, bulk InAs, and HgCdTe—all with an identical bandgap of 370 meV at 250 K. The...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2024-03, Vol.124 (13)
Hauptverfasser:	Tempel, S., Winslow, M., Kodati, S. H., Lee, S., Ronningen, T. J., Krishna, S., Krishnamurthy, S., Grein, C. H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Avalanche diodes Breakdown Comparative studies Electric fields Electron avalanche Indium aluminum arsenides Indium arsenides Ionization coefficients Mathematical analysis Mercury cadmium tellurides Photodiodes Superlattices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!