Impact of on-chip gate voltage on the electric properties of NbTiN superconducting nanowire transistor

In this work, the gate modulation characteristics of superconducting nanowire transistors (SNTs) were investigated under different on-chip gate voltage configurations. By fabricating NbTiN-SNTs with symmetric side gate, we studied the critical current suppression of SNTs under single, opposite, and...

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Veröffentlicht in:	Applied physics letters 2024-03, Vol.124 (13)
Hauptverfasser:	Huan, Qingchang, Ma, Ruoyan, Zhang, Xingyu, Feng, Zhongpei, Li, Yangmu, Xiong, Jiamin, Huang, Jia, Li, Hao, Peng, Wei, Zhang, Xiaofu, You, Lixing
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge injection Configurations Critical current (superconductivity) Electric fields Electric potential Electric properties Leakage current Modulation Nanowires Superconductivity Transistors Voltage
Online-Zugang:	Volltext
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