Accounting for Carrier Mobility Reduction due to the Normal Field in the Saturation Current Modeling of Extrinsic MOSFETs

— Previously, we developed the extrinsic (taking into account contact resistances) short-channel MOSFET compact model for an above-threshold regime. We took into account carrier velocity saturation in high electric fields and we used a linear approximation for the threshold voltage dependence on the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Russian microelectronics 2023-12, Vol.52 (Suppl 1), p.S6-S13
Hauptverfasser:	Turin, V. O., Ilyushina, Y. V., Shcherbina, M. A., Rakhmatov, B. A., Zebrev, G. I., Kokin, S. A., Makarov, S. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Carrier mobility Devices: Transistors Electric contacts Electric fields Electrical Engineering Engineering Implicit equations Iterative methods MOSFETs Numerical methods Reduction Threshold voltage
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!