Investigation of Test Cells of Nonvolatile Magnetoresistive Memory
A new generation of nonvolatile memory devices are being actively developed and researched. The MRAM test cell is manufactured by Scientific-Manufacturing Complex “Technological Centre.” A control measuring system (CMS) is developed and manufactured for research. The work presents an algorithm for o...
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| Veröffentlicht in: | Nanobiotechnology Reports (Online) 2023-12, Vol.18 (Suppl 1), p.S170-S174 |
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| container_title | Nanobiotechnology Reports (Online) |
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| creator | Makarova, E. E. Amelichev, V. V. Kostyuk, D. V. Vasilyev, D. V. Kazakov, Yu. V. Orlov, E. P. |
| description | A new generation of nonvolatile memory devices are being actively developed and researched. The MRAM test cell is manufactured by Scientific-Manufacturing Complex “Technological Centre.” A control measuring system (CMS) is developed and manufactured for research. The work presents an algorithm for operation of the CMS, which makes it possible to study the spin-tunnel magnetoresistive (STMR) elements of a nonvolatile magnetoresistive random-access memory (MRAM) test cell. The main investigated characteristics of the MRAM test cell are the currents at which the cell is magnetized. Methods for measuring the resistance in a changing magnetic field created by the buses and determining currents for the magnetization reversal of a STMR element are presented in this work. The recording current value of the STMR element for the row is 40 mA and for the column, it is 67 mA. The next stage of the study is writing and reading the STMR elements. The resistance of the STMR element with the “0” logic state is 6.8 kΩ and with the “1” logic state is 13.4 kΩ. The stability of the MRAM element is confirmed by performing switching operations while maintaining the levels of the logic states. |
| doi_str_mv | 10.1134/S2635167623600839 |
| format | Article |
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E. ; Amelichev, V. V. ; Kostyuk, D. V. ; Vasilyev, D. V. ; Kazakov, Yu. V. ; Orlov, E. P.</creator><creatorcontrib>Makarova, E. E. ; Amelichev, V. V. ; Kostyuk, D. V. ; Vasilyev, D. V. ; Kazakov, Yu. V. ; Orlov, E. P.</creatorcontrib><description>A new generation of nonvolatile memory devices are being actively developed and researched. The MRAM test cell is manufactured by Scientific-Manufacturing Complex “Technological Centre.” A control measuring system (CMS) is developed and manufactured for research. The work presents an algorithm for operation of the CMS, which makes it possible to study the spin-tunnel magnetoresistive (STMR) elements of a nonvolatile magnetoresistive random-access memory (MRAM) test cell. The main investigated characteristics of the MRAM test cell are the currents at which the cell is magnetized. Methods for measuring the resistance in a changing magnetic field created by the buses and determining currents for the magnetization reversal of a STMR element are presented in this work. The recording current value of the STMR element for the row is 40 mA and for the column, it is 67 mA. The next stage of the study is writing and reading the STMR elements. The resistance of the STMR element with the “0” logic state is 6.8 kΩ and with the “1” logic state is 13.4 kΩ. The stability of the MRAM element is confirmed by performing switching operations while maintaining the levels of the logic states.</description><identifier>ISSN: 2635-1676</identifier><identifier>ISSN: 1995-0780</identifier><identifier>EISSN: 2635-1684</identifier><identifier>EISSN: 1995-0799</identifier><identifier>DOI: 10.1134/S2635167623600839</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Algorithms ; Chemistry and Materials Science ; Devices and Products Based on Nanomaterials and Nanotechnologies ; Industrial and Production Engineering ; Logic ; Machines ; Magnetization reversal ; Magnetoresistivity ; Manufacturing ; Materials Science ; Measurement methods ; Memory devices ; Nanotechnology ; Processes ; Random access memory</subject><ispartof>Nanobiotechnology Reports (Online), 2023-12, Vol.18 (Suppl 1), p.S170-S174</ispartof><rights>Pleiades Publishing, Ltd. 2023. ISSN 2635-1676, Nanobiotechnology Reports, 2023, Vol. 18, Suppl. 1, pp. S170–S174. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Nano- i Mikrosistemnaya Tekhnika, 2022, Vol. 24, No. 3, pp. 154–158.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c268t-abaef25a84002a7a8af271ca4256f4a123268fb0e77e37d004cfc80e046c95ba3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S2635167623600839$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S2635167623600839$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Makarova, E. E.</creatorcontrib><creatorcontrib>Amelichev, V. 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Methods for measuring the resistance in a changing magnetic field created by the buses and determining currents for the magnetization reversal of a STMR element are presented in this work. The recording current value of the STMR element for the row is 40 mA and for the column, it is 67 mA. The next stage of the study is writing and reading the STMR elements. The resistance of the STMR element with the “0” logic state is 6.8 kΩ and with the “1” logic state is 13.4 kΩ. 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P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of Test Cells of Nonvolatile Magnetoresistive Memory</atitle><jtitle>Nanobiotechnology Reports (Online)</jtitle><stitle>Nanotechnol Russia</stitle><date>2023-12-01</date><risdate>2023</risdate><volume>18</volume><issue>Suppl 1</issue><spage>S170</spage><epage>S174</epage><pages>S170-S174</pages><issn>2635-1676</issn><issn>1995-0780</issn><eissn>2635-1684</eissn><eissn>1995-0799</eissn><abstract>A new generation of nonvolatile memory devices are being actively developed and researched. The MRAM test cell is manufactured by Scientific-Manufacturing Complex “Technological Centre.” A control measuring system (CMS) is developed and manufactured for research. The work presents an algorithm for operation of the CMS, which makes it possible to study the spin-tunnel magnetoresistive (STMR) elements of a nonvolatile magnetoresistive random-access memory (MRAM) test cell. The main investigated characteristics of the MRAM test cell are the currents at which the cell is magnetized. Methods for measuring the resistance in a changing magnetic field created by the buses and determining currents for the magnetization reversal of a STMR element are presented in this work. The recording current value of the STMR element for the row is 40 mA and for the column, it is 67 mA. The next stage of the study is writing and reading the STMR elements. The resistance of the STMR element with the “0” logic state is 6.8 kΩ and with the “1” logic state is 13.4 kΩ. The stability of the MRAM element is confirmed by performing switching operations while maintaining the levels of the logic states.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S2635167623600839</doi></addata></record> |
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| identifier | ISSN: 2635-1676 |
| ispartof | Nanobiotechnology Reports (Online), 2023-12, Vol.18 (Suppl 1), p.S170-S174 |
| issn | 2635-1676 1995-0780 2635-1684 1995-0799 |
| language | eng |
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| subjects | Algorithms Chemistry and Materials Science Devices and Products Based on Nanomaterials and Nanotechnologies Industrial and Production Engineering Logic Machines Magnetization reversal Magnetoresistivity Manufacturing Materials Science Measurement methods Memory devices Nanotechnology Processes Random access memory |
| title | Investigation of Test Cells of Nonvolatile Magnetoresistive Memory |
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