Obtaining Anisotypic Heterostructures for a GaSb-Based Photovoltaic Converter Due to Solid-Phase Substitution Reactions

The possibility of manufacturing photovoltaic converter structures due to solid-phase reactions of substitution of Sb atoms in GaSb semiconductor wafers with As or P atoms, with simultaneous diffusion of Zn, is demonstrated.

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Veröffentlicht in:	Technical physics letters 2023-12, Vol.49 (12), p.253-255
Hauptverfasser:	Gagis, G. S., Kuchinskii, V. I., Kazantsev, D. Yu, Ber, B. Ya, Tokarev, M. V., Khvostikov, V. P., Nakhimovich, M. V., Vlasov, A. S., Vasil’ev, V. I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Antimony Atomic properties Classical and Continuum Physics Gallium antimonides Heterostructures Physics Physics and Astronomy Solid phases Substitution reactions
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container_title	Technical physics letters
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creator	Gagis, G. S. Kuchinskii, V. I. Kazantsev, D. Yu Ber, B. Ya Tokarev, M. V. Khvostikov, V. P. Nakhimovich, M. V. Vlasov, A. S. Vasil’ev, V. I.
description	The possibility of manufacturing photovoltaic converter structures due to solid-phase reactions of substitution of Sb atoms in GaSb semiconductor wafers with As or P atoms, with simultaneous diffusion of Zn, is demonstrated.
doi_str_mv	10.1134/S1063785023900170
format	Article
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subjects	Antimony Atomic properties Classical and Continuum Physics Gallium antimonides Heterostructures Physics Physics and Astronomy Solid phases Substitution reactions
title	Obtaining Anisotypic Heterostructures for a GaSb-Based Photovoltaic Converter Due to Solid-Phase Substitution Reactions
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