Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes

Switching of a high-voltage GaAs diode to the conducting state in the delayed impact-ionization mode is simulated and the results are compared with experimental data. It is shown that the effect of long-term (up to 100 ns) sustaining of the conducting state of the diode after switching is due to the...

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Veröffentlicht in:	Technical physics letters 2023-12, Vol.49 (Suppl 1), p.S22-S25
Hauptverfasser:	Ivanov, M. S., Rozhkov, A. V., Rodin, P. B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Classical and Continuum Physics Electric fields High voltages Holes (electron deficiencies) Ionization Physics Physics and Astronomy Switching
Online-Zugang:	Volltext
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