Perspective: Theory and simulation of highly mismatched semiconductor alloys using the tight-binding method

The electronic structure of highly mismatched semiconductor alloys is characterized by carrier localization and strongly influenced by the local alloy microstructure. First-principles calculations can deliver valuable quantitative insight, but their associated computational expense limits alloy supe...

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Veröffentlicht in:	Journal of applied physics 2024-03, Vol.135 (10)
Hauptverfasser:	Broderick, Christopher A., O’Reilly, Eoin P., Schulz, Stefan
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloys Binding Continuum modeling Electronic structure Empirical analysis First principles Heterostructures Impact analysis Localization Optoelectronics Perovskites Semiconductor materials Two dimensional materials
Online-Zugang:	Volltext
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