Intrinsic edge states and strain-tunable spin textures in the Janus 1T-VTeCl monolayer

Using first-principles calculations and micro-magnetic simulations, we investigate the electronic structures, the effect of biaxial strain on the topological characteristics, magnetic anisotropy energy (MAE), Dzyaloshinskii-Moriya interaction (DMI) and spin textures in the Janus 1T phase VTeCl (1T-V...

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Veröffentlicht in:Physical chemistry chemical physics : PCCP 2024-03, Vol.26 (11), p.8623-863
Hauptverfasser: Chen, Zheng, Hu, Hongliang, Feng, Dushuo, Guan, Zhihao, Zhong, Tingting, Wu, Xiaoping, Song, Changsheng
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Sprache:eng
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Zusammenfassung:Using first-principles calculations and micro-magnetic simulations, we investigate the electronic structures, the effect of biaxial strain on the topological characteristics, magnetic anisotropy energy (MAE), Dzyaloshinskii-Moriya interaction (DMI) and spin textures in the Janus 1T phase VTeCl (1T-VTeCl) monolayer. Our results show that 1T-VTeCl has an intrinsic edge state, and a topological phase transition with a sizeable band gap is achieved by applying biaxial strain. Interestingly, the MAE can be switched from the in-plane to the off-plane with a compressive strain of −5%. Microscopically, the origin of MAE is mainly associated with the large spin-orbit coupling (SOC) from the heavy nonmagnetic Te atoms rather than that from the V atoms. Furthermore, the induced DMI (0.09 meV) can occur stabilizing magnetic merons without applying temperatures and magnetic fields. Then, the skyrmions, frustrated antiferromagnetism and vortex are induced after applying a suitable compressive strain. Our study provides compelling evidence that the 1T-VTeCl monolayer with topological properties holds great potential for application in spintronic devices, as well as information storage devices based on different magnetic phases achievable through strain engineering. The Janus 1T-VTeCl monolayer unveils intrinsic edge states, a strain-induced topological phase transition, and versatile magnetic behaviors. Its potential applications include spintronic devices and information storage via strain engineering.
ISSN:1463-9076
1463-9084
DOI:10.1039/d3cp05744e