The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdisks

Germanium–tin (GeSn) microdisks are promising structures for complementary metal–oxide–semiconductor‐compatible lasing. Their emission properties depend on Sn concentration, strain, and operating temperature. Critically, the band structure of the alloy varies along the disk due to different lattice...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2024-03, Vol.18 (3)
Hauptverfasser:	Zaitsev, Ignatii, Corley-Wiciak, Agnieszka Anna, Corley-Wiciak, Cedric, Marvin Hartwig Zoellner, Richter, Carsten, Zatterin, Edoardo, Virgilio, Michele, Martín-García, Beatriz, Spirito, Davide, Costanza Lucia Manganelli
Format:	Artikel
Sprache:	eng
Schlagworte:	Band structure of solids CMOS Deformation Emission analysis Energy gap Finite element method Germanium Intermetallic compounds Operating temperature Optoelectronics Photoluminescence Potential theory Robustness (mathematics) Temperature dependence Tin
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!