A Concurrent 26/48 GHz Low-Noise Amplifier With an Optimal Dual-Band Noise Matching Method Using GaAs 0.15 μm pHEMT
This brief presents the design and fabrication of a concurrent 26/48 GHz low-noise amplifier (LNA) that includes a dual-band matching network for moderate gain and optimized noise performance. The proposed dual-band matching network achieve simultaneous dual-band impedance matching for noise figure...
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| Veröffentlicht in: | IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2024-03, Vol.71 (3), p.1096-1100 |
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| creator | Lee, Sunwoo Seo, Wonwoo Kim, Sunghyuk Ko, Byunghun Lee, Songjune Kim, Min-Su Kim, Junghyun |
| description | This brief presents the design and fabrication of a concurrent 26/48 GHz low-noise amplifier (LNA) that includes a dual-band matching network for moderate gain and optimized noise performance. The proposed dual-band matching network achieve simultaneous dual-band impedance matching for noise figure (NF) optimization by utilizing series and parallel resonance methods. A cascode structure with inductive source degeneration is employed to simultaneously achieve both gain and noise performance optimization. The fabricated LNA has a small-signal gain of 12.5 dB at 26 GHz and 14.5 dB at 48 GHz, and the NF was measured at 2.61 dB at 26 GHz and 3.41 dB at 48 GHz, respectively. Moreover, the output 1 dB compression point (OP1dB) is 2.3 dBm at 26 GHz and −2.7 dBm at 48 GHz. The LNA was fabricated with an area of 1.34\times 0.7\,\,{mm}^{2} using a GaAs 0.15~{\mu m} pHEMT process. |
| doi_str_mv | 10.1109/TCSII.2023.3323221 |
| format | Article |
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The proposed dual-band matching network achieve simultaneous dual-band impedance matching for noise figure (NF) optimization by utilizing series and parallel resonance methods. A cascode structure with inductive source degeneration is employed to simultaneously achieve both gain and noise performance optimization. The fabricated LNA has a small-signal gain of 12.5 dB at 26 GHz and 14.5 dB at 48 GHz, and the NF was measured at 2.61 dB at 26 GHz and 3.41 dB at 48 GHz, respectively. Moreover, the output 1 dB compression point (OP1dB) is 2.3 dBm at 26 GHz and −2.7 dBm at 48 GHz. The LNA was fabricated with an area of <inline-formula> <tex-math notation="LaTeX">1.34\times 0.7\,\,{mm}^{2} </tex-math></inline-formula> using a GaAs <inline-formula> <tex-math notation="LaTeX">0.15~{\mu m} </tex-math></inline-formula> pHEMT process.]]></description><identifier>ISSN: 1549-7747</identifier><identifier>EISSN: 1558-3791</identifier><identifier>DOI: 10.1109/TCSII.2023.3323221</identifier><identifier>CODEN: ITCSFK</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>5G mobile communication ; Amplification ; Amplifiers ; Concurrent dual-band ; Degeneration ; Dual band ; GaAs ; Impedance ; Impedance matching ; input matching network ; K-band ; low-noise amplifier (LNA) ; noise optimum impedance ; Optimization ; Optimized production technology ; parallel resonance ; pseudomorphic high electron mobility transistor (pHEMT) ; Q-band ; Resonant frequency ; series resonance ; Trajectory</subject><ispartof>IEEE transactions on circuits and systems. II, Express briefs, 2024-03, Vol.71 (3), p.1096-1100</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c247t-3153435ebfa0ca594fb7e365733725b6ddd55412e670ded8fa0183d6a68750ee3</cites><orcidid>0009-0005-1432-1686 ; 0000-0001-7645-8702 ; 0000-0002-7566-5408 ; 0000-0002-8236-6596 ; 0000-0001-9424-3377 ; 0000-0002-7071-8128 ; 0000-0003-4727-9881</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10275128$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10275128$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lee, Sunwoo</creatorcontrib><creatorcontrib>Seo, Wonwoo</creatorcontrib><creatorcontrib>Kim, Sunghyuk</creatorcontrib><creatorcontrib>Ko, Byunghun</creatorcontrib><creatorcontrib>Lee, Songjune</creatorcontrib><creatorcontrib>Kim, Min-Su</creatorcontrib><creatorcontrib>Kim, Junghyun</creatorcontrib><title>A Concurrent 26/48 GHz Low-Noise Amplifier With an Optimal Dual-Band Noise Matching Method Using GaAs 0.15 μm pHEMT</title><title>IEEE transactions on circuits and systems. II, Express briefs</title><addtitle>TCSII</addtitle><description><![CDATA[This brief presents the design and fabrication of a concurrent 26/48 GHz low-noise amplifier (LNA) that includes a dual-band matching network for moderate gain and optimized noise performance. The proposed dual-band matching network achieve simultaneous dual-band impedance matching for noise figure (NF) optimization by utilizing series and parallel resonance methods. A cascode structure with inductive source degeneration is employed to simultaneously achieve both gain and noise performance optimization. The fabricated LNA has a small-signal gain of 12.5 dB at 26 GHz and 14.5 dB at 48 GHz, and the NF was measured at 2.61 dB at 26 GHz and 3.41 dB at 48 GHz, respectively. Moreover, the output 1 dB compression point (OP1dB) is 2.3 dBm at 26 GHz and −2.7 dBm at 48 GHz. The LNA was fabricated with an area of <inline-formula> <tex-math notation="LaTeX">1.34\times 0.7\,\,{mm}^{2} </tex-math></inline-formula> using a GaAs <inline-formula> <tex-math notation="LaTeX">0.15~{\mu m} </tex-math></inline-formula> pHEMT process.]]></description><subject>5G mobile communication</subject><subject>Amplification</subject><subject>Amplifiers</subject><subject>Concurrent dual-band</subject><subject>Degeneration</subject><subject>Dual band</subject><subject>GaAs</subject><subject>Impedance</subject><subject>Impedance matching</subject><subject>input matching network</subject><subject>K-band</subject><subject>low-noise amplifier (LNA)</subject><subject>noise optimum impedance</subject><subject>Optimization</subject><subject>Optimized production technology</subject><subject>parallel resonance</subject><subject>pseudomorphic high electron mobility transistor (pHEMT)</subject><subject>Q-band</subject><subject>Resonant frequency</subject><subject>series resonance</subject><subject>Trajectory</subject><issn>1549-7747</issn><issn>1558-3791</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkEtOwzAURS0EEqWwAcTAEuO0_sRxMgyltJVaOqAVQ8tNXmiqNAm2IwRrYw2siYR0wMjP0rnvcxC6pWREKYnGm8nLYjFihPER54wzRs_QgAoRelxG9Lyr_ciT0peX6MraAyEsIpwNkIvxpCqTxhgoHWbB2A_xbP6Fl9WH91zlFnB8rIs8y8Hg19ztsS7xunb5URf4sdGF96DLFPfkSrtkn5dveAVuX6V4a7vPTMcWt2sK_PN9xPV8utpco4tMFxZuTu8QbZ-mm8ncW65ni0m89BLmS-dxKrjPBewyTRItIj_bSeCBkJxLJnZBmqZC-JRBIEkKadhiNORpoINQCgLAh-i-71ub6r0B69ShakzZjlQs4mFri0W0pVhPJaay1kCmatPeZz4VJaqzq_7sqs6uOtltQ3d9KAeAfwEmBWUh_wWgjXNs</recordid><startdate>20240301</startdate><enddate>20240301</enddate><creator>Lee, Sunwoo</creator><creator>Seo, Wonwoo</creator><creator>Kim, Sunghyuk</creator><creator>Ko, Byunghun</creator><creator>Lee, Songjune</creator><creator>Kim, Min-Su</creator><creator>Kim, Junghyun</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0009-0005-1432-1686</orcidid><orcidid>https://orcid.org/0000-0001-7645-8702</orcidid><orcidid>https://orcid.org/0000-0002-7566-5408</orcidid><orcidid>https://orcid.org/0000-0002-8236-6596</orcidid><orcidid>https://orcid.org/0000-0001-9424-3377</orcidid><orcidid>https://orcid.org/0000-0002-7071-8128</orcidid><orcidid>https://orcid.org/0000-0003-4727-9881</orcidid></search><sort><creationdate>20240301</creationdate><title>A Concurrent 26/48 GHz Low-Noise Amplifier With an Optimal Dual-Band Noise Matching Method Using GaAs 0.15 μm pHEMT</title><author>Lee, Sunwoo ; Seo, Wonwoo ; Kim, Sunghyuk ; Ko, Byunghun ; Lee, Songjune ; Kim, Min-Su ; Kim, Junghyun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c247t-3153435ebfa0ca594fb7e365733725b6ddd55412e670ded8fa0183d6a68750ee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>5G mobile communication</topic><topic>Amplification</topic><topic>Amplifiers</topic><topic>Concurrent dual-band</topic><topic>Degeneration</topic><topic>Dual band</topic><topic>GaAs</topic><topic>Impedance</topic><topic>Impedance matching</topic><topic>input matching network</topic><topic>K-band</topic><topic>low-noise amplifier (LNA)</topic><topic>noise optimum impedance</topic><topic>Optimization</topic><topic>Optimized production technology</topic><topic>parallel resonance</topic><topic>pseudomorphic high electron mobility transistor (pHEMT)</topic><topic>Q-band</topic><topic>Resonant frequency</topic><topic>series resonance</topic><topic>Trajectory</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Sunwoo</creatorcontrib><creatorcontrib>Seo, Wonwoo</creatorcontrib><creatorcontrib>Kim, Sunghyuk</creatorcontrib><creatorcontrib>Ko, Byunghun</creatorcontrib><creatorcontrib>Lee, Songjune</creatorcontrib><creatorcontrib>Kim, Min-Su</creatorcontrib><creatorcontrib>Kim, Junghyun</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on circuits and systems. II, Express briefs</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Sunwoo</au><au>Seo, Wonwoo</au><au>Kim, Sunghyuk</au><au>Ko, Byunghun</au><au>Lee, Songjune</au><au>Kim, Min-Su</au><au>Kim, Junghyun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Concurrent 26/48 GHz Low-Noise Amplifier With an Optimal Dual-Band Noise Matching Method Using GaAs 0.15 μm pHEMT</atitle><jtitle>IEEE transactions on circuits and systems. II, Express briefs</jtitle><stitle>TCSII</stitle><date>2024-03-01</date><risdate>2024</risdate><volume>71</volume><issue>3</issue><spage>1096</spage><epage>1100</epage><pages>1096-1100</pages><issn>1549-7747</issn><eissn>1558-3791</eissn><coden>ITCSFK</coden><abstract><![CDATA[This brief presents the design and fabrication of a concurrent 26/48 GHz low-noise amplifier (LNA) that includes a dual-band matching network for moderate gain and optimized noise performance. The proposed dual-band matching network achieve simultaneous dual-band impedance matching for noise figure (NF) optimization by utilizing series and parallel resonance methods. A cascode structure with inductive source degeneration is employed to simultaneously achieve both gain and noise performance optimization. The fabricated LNA has a small-signal gain of 12.5 dB at 26 GHz and 14.5 dB at 48 GHz, and the NF was measured at 2.61 dB at 26 GHz and 3.41 dB at 48 GHz, respectively. Moreover, the output 1 dB compression point (OP1dB) is 2.3 dBm at 26 GHz and −2.7 dBm at 48 GHz. The LNA was fabricated with an area of <inline-formula> <tex-math notation="LaTeX">1.34\times 0.7\,\,{mm}^{2} </tex-math></inline-formula> using a GaAs <inline-formula> <tex-math notation="LaTeX">0.15~{\mu m} </tex-math></inline-formula> pHEMT process.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCSII.2023.3323221</doi><tpages>5</tpages><orcidid>https://orcid.org/0009-0005-1432-1686</orcidid><orcidid>https://orcid.org/0000-0001-7645-8702</orcidid><orcidid>https://orcid.org/0000-0002-7566-5408</orcidid><orcidid>https://orcid.org/0000-0002-8236-6596</orcidid><orcidid>https://orcid.org/0000-0001-9424-3377</orcidid><orcidid>https://orcid.org/0000-0002-7071-8128</orcidid><orcidid>https://orcid.org/0000-0003-4727-9881</orcidid></addata></record> |
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| ispartof | IEEE transactions on circuits and systems. II, Express briefs, 2024-03, Vol.71 (3), p.1096-1100 |
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| subjects | 5G mobile communication Amplification Amplifiers Concurrent dual-band Degeneration Dual band GaAs Impedance Impedance matching input matching network K-band low-noise amplifier (LNA) noise optimum impedance Optimization Optimized production technology parallel resonance pseudomorphic high electron mobility transistor (pHEMT) Q-band Resonant frequency series resonance Trajectory |
| title | A Concurrent 26/48 GHz Low-Noise Amplifier With an Optimal Dual-Band Noise Matching Method Using GaAs 0.15 μm pHEMT |
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