Fabrication of ZnO/CuBr1-xIx microstructural transparent solar cells with buffer layer
Transparent solar cells (TSCs) are invisible, landscape-harmonized power generation devices that can be installed on a large number of surfaces. Herein, ZnO/CuBr1-xIx (CuBrI) microstructural TSCs with ZnO nanorods (NR) were fabricated via a solution process; the ZnO NRs were used to decrease carrier...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2024-03, Vol.63 (3), p.031002 |
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| container_issue | 3 |
| container_start_page | 031002 |
| container_title | Japanese Journal of Applied Physics |
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| creator | Tsujimoto, Naoya Ochiai, Koya Tamai, Daikichi Kanai, Ayaka Tanaka, Kunihiko |
| description | Transparent solar cells (TSCs) are invisible, landscape-harmonized power generation devices that can be installed on a large number of surfaces. Herein, ZnO/CuBr1-xIx (CuBrI) microstructural TSCs with ZnO nanorods (NR) were fabricated via a solution process; the ZnO NRs were used to decrease carrier loss. A ZnO or MgO buffer layer (BL) was introduced between ZnO and CuBrI to improve the open circuit voltage (VOC). The BLs significantly improved the VOC by reducing the leakage current. Moreover, owing to the suppression of carrier recombination near the p-n junction interface, the short circuit current density (JSC) of the TSC with MgO BL increased, and the VOC improved further. The TSC with MgO BL exhibited the highest power density of 7.3 nW cm−2 with a VOC of 42 mV, JSC of 0.64 μA cm−2, fill factor of 26.7%, and transmittance of over 70% across a wavelength range greater than 500 nm. |
| doi_str_mv | 10.35848/1347-4065/ad27a1 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_2937371195</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2937371195</sourcerecordid><originalsourceid>FETCH-LOGICAL-p98t-c2e2e5ce0f605e2d3ee56359e96ed4d52b4d0ed156e106bdd0885ca16026c4963</originalsourceid><addsrcrecordid>eNo9jktLxDAYRYMoWEd_gLuA69i82yy1ODowMJvBhZshTb5ih9rWPHD89xYUV5d7FvdchG4ZvReqlnXJhKyIpFqV1vPKsjNU_KNzVFDKGZGG80t0FeNxqVpJVqDXtW1D72zqpxFPHX4bd2WTHwMjp80Jf_QuTDGF7FIOdsAp2DHONsCYcJwGG7CDYYj4q0_vuM1dBwEP9hvCNbro7BDh5i9XaL9-2jcvZLt73jQPWzKbOhHHgYNyQDtNFXAvAJQWyoDR4KVXvJWegmdKA6O69Z7WtXKW6eW9k0aLFbr7nZ3D9JkhpsNxymFcjAduRCUqxowSP3S-VCU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2937371195</pqid></control><display><type>article</type><title>Fabrication of ZnO/CuBr1-xIx microstructural transparent solar cells with buffer layer</title><source>HEAL-Link subscriptions: Institute of Physics (IOP) Journals</source><source>Institute of Physics Journals</source><creator>Tsujimoto, Naoya ; Ochiai, Koya ; Tamai, Daikichi ; Kanai, Ayaka ; Tanaka, Kunihiko</creator><creatorcontrib>Tsujimoto, Naoya ; Ochiai, Koya ; Tamai, Daikichi ; Kanai, Ayaka ; Tanaka, Kunihiko</creatorcontrib><description>Transparent solar cells (TSCs) are invisible, landscape-harmonized power generation devices that can be installed on a large number of surfaces. Herein, ZnO/CuBr1-xIx (CuBrI) microstructural TSCs with ZnO nanorods (NR) were fabricated via a solution process; the ZnO NRs were used to decrease carrier loss. A ZnO or MgO buffer layer (BL) was introduced between ZnO and CuBrI to improve the open circuit voltage (VOC). The BLs significantly improved the VOC by reducing the leakage current. Moreover, owing to the suppression of carrier recombination near the p-n junction interface, the short circuit current density (JSC) of the TSC with MgO BL increased, and the VOC improved further. The TSC with MgO BL exhibited the highest power density of 7.3 nW cm−2 with a VOC of 42 mV, JSC of 0.64 μA cm−2, fill factor of 26.7%, and transmittance of over 70% across a wavelength range greater than 500 nm.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ad27a1</identifier><language>eng</language><publisher>Tokyo: Japanese Journal of Applied Physics</publisher><subject>Buffer layers ; Carrier recombination ; Leakage current ; Magnesium oxide ; Nanorods ; Open circuit voltage ; P-n junctions ; Photovoltaic cells ; Short circuit currents ; Solar cells ; Zinc oxide</subject><ispartof>Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.031002</ispartof><rights>2024 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Tsujimoto, Naoya</creatorcontrib><creatorcontrib>Ochiai, Koya</creatorcontrib><creatorcontrib>Tamai, Daikichi</creatorcontrib><creatorcontrib>Kanai, Ayaka</creatorcontrib><creatorcontrib>Tanaka, Kunihiko</creatorcontrib><title>Fabrication of ZnO/CuBr1-xIx microstructural transparent solar cells with buffer layer</title><title>Japanese Journal of Applied Physics</title><description>Transparent solar cells (TSCs) are invisible, landscape-harmonized power generation devices that can be installed on a large number of surfaces. Herein, ZnO/CuBr1-xIx (CuBrI) microstructural TSCs with ZnO nanorods (NR) were fabricated via a solution process; the ZnO NRs were used to decrease carrier loss. A ZnO or MgO buffer layer (BL) was introduced between ZnO and CuBrI to improve the open circuit voltage (VOC). The BLs significantly improved the VOC by reducing the leakage current. Moreover, owing to the suppression of carrier recombination near the p-n junction interface, the short circuit current density (JSC) of the TSC with MgO BL increased, and the VOC improved further. The TSC with MgO BL exhibited the highest power density of 7.3 nW cm−2 with a VOC of 42 mV, JSC of 0.64 μA cm−2, fill factor of 26.7%, and transmittance of over 70% across a wavelength range greater than 500 nm.</description><subject>Buffer layers</subject><subject>Carrier recombination</subject><subject>Leakage current</subject><subject>Magnesium oxide</subject><subject>Nanorods</subject><subject>Open circuit voltage</subject><subject>P-n junctions</subject><subject>Photovoltaic cells</subject><subject>Short circuit currents</subject><subject>Solar cells</subject><subject>Zinc oxide</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNo9jktLxDAYRYMoWEd_gLuA69i82yy1ODowMJvBhZshTb5ih9rWPHD89xYUV5d7FvdchG4ZvReqlnXJhKyIpFqV1vPKsjNU_KNzVFDKGZGG80t0FeNxqVpJVqDXtW1D72zqpxFPHX4bd2WTHwMjp80Jf_QuTDGF7FIOdsAp2DHONsCYcJwGG7CDYYj4q0_vuM1dBwEP9hvCNbro7BDh5i9XaL9-2jcvZLt73jQPWzKbOhHHgYNyQDtNFXAvAJQWyoDR4KVXvJWegmdKA6O69Z7WtXKW6eW9k0aLFbr7nZ3D9JkhpsNxymFcjAduRCUqxowSP3S-VCU</recordid><startdate>20240301</startdate><enddate>20240301</enddate><creator>Tsujimoto, Naoya</creator><creator>Ochiai, Koya</creator><creator>Tamai, Daikichi</creator><creator>Kanai, Ayaka</creator><creator>Tanaka, Kunihiko</creator><general>Japanese Journal of Applied Physics</general><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20240301</creationdate><title>Fabrication of ZnO/CuBr1-xIx microstructural transparent solar cells with buffer layer</title><author>Tsujimoto, Naoya ; Ochiai, Koya ; Tamai, Daikichi ; Kanai, Ayaka ; Tanaka, Kunihiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p98t-c2e2e5ce0f605e2d3ee56359e96ed4d52b4d0ed156e106bdd0885ca16026c4963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Buffer layers</topic><topic>Carrier recombination</topic><topic>Leakage current</topic><topic>Magnesium oxide</topic><topic>Nanorods</topic><topic>Open circuit voltage</topic><topic>P-n junctions</topic><topic>Photovoltaic cells</topic><topic>Short circuit currents</topic><topic>Solar cells</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsujimoto, Naoya</creatorcontrib><creatorcontrib>Ochiai, Koya</creatorcontrib><creatorcontrib>Tamai, Daikichi</creatorcontrib><creatorcontrib>Kanai, Ayaka</creatorcontrib><creatorcontrib>Tanaka, Kunihiko</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsujimoto, Naoya</au><au>Ochiai, Koya</au><au>Tamai, Daikichi</au><au>Kanai, Ayaka</au><au>Tanaka, Kunihiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of ZnO/CuBr1-xIx microstructural transparent solar cells with buffer layer</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2024-03-01</date><risdate>2024</risdate><volume>63</volume><issue>3</issue><spage>031002</spage><pages>031002-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Transparent solar cells (TSCs) are invisible, landscape-harmonized power generation devices that can be installed on a large number of surfaces. Herein, ZnO/CuBr1-xIx (CuBrI) microstructural TSCs with ZnO nanorods (NR) were fabricated via a solution process; the ZnO NRs were used to decrease carrier loss. A ZnO or MgO buffer layer (BL) was introduced between ZnO and CuBrI to improve the open circuit voltage (VOC). The BLs significantly improved the VOC by reducing the leakage current. Moreover, owing to the suppression of carrier recombination near the p-n junction interface, the short circuit current density (JSC) of the TSC with MgO BL increased, and the VOC improved further. The TSC with MgO BL exhibited the highest power density of 7.3 nW cm−2 with a VOC of 42 mV, JSC of 0.64 μA cm−2, fill factor of 26.7%, and transmittance of over 70% across a wavelength range greater than 500 nm.</abstract><cop>Tokyo</cop><pub>Japanese Journal of Applied Physics</pub><doi>10.35848/1347-4065/ad27a1</doi></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.031002 |
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| language | eng |
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| subjects | Buffer layers Carrier recombination Leakage current Magnesium oxide Nanorods Open circuit voltage P-n junctions Photovoltaic cells Short circuit currents Solar cells Zinc oxide |
| title | Fabrication of ZnO/CuBr1-xIx microstructural transparent solar cells with buffer layer |
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