Super-high responsivity and harsh environment-resistant ultraviolet photodetector enabled by Ta2NiSe5/GaN van der Waals heterojunction

Gallium nitride (GaN) has garnered significant research interest for ultraviolet (UV) photodetectors due to its direct bandgap, inherent UV absorption window, and high breakdown voltage. In this work, a new ternary chalcogenides Ta 2 NiSe 5 with high mobility is successfully stacked with unintention...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Science China materials 2024-03, Vol.67 (3), p.863-870
Hauptverfasser:	Lei, Jianpeng, Zheng, Tao, Wu, Wanglong, Zheng, Zhaoqiang, Zheng, Quansheng, Wang, Xiaozhou, Xiao, Wenbo, Li, Jingbo, Yang, Mengmeng
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Chemistry/Food Science Gallium nitrides Heterojunction devices High temperature Illumination Light Materials Science Optical communication Photometers Ultraviolet detectors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!