Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

High temperature (HT) electronics applications will require the development of a broad range of devices made using different materials. Among these devices, high-electron mobility transistors (HEMTs) made with GaN and its alloys are attractive for high-power radio frequency (RF) applications. In thi...

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