A New Anisotropic Driving Force Model for SiC Device Simulations

We present a new anisotropic driving force model to compute the anisotropy of the mobility and impact ionization rate in TCAD simulations of silicon carbide (SiC) devices. We derive the model from the relationship between mobility, driving force, and carrier heating. The obtained driving force along...

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Veröffentlicht in:	IEEE transactions on electron devices 2024-03, Vol.71 (3), p.2024-2029
Hauptverfasser:	Jin, Seonghoon, Lee, Kyungmin, Choi, Woosung, Park, Chulwoo, Yi, Shinwook, Fujii, Hiroki, Yoo, Jaehyun, Park, Yonghee, Jeong, Jaehoon, Kim, Dae Sin
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropic magnetoresistance Anisotropy device simulations drift-diffusion (DD) driving force Electron mobility Force Impact ionization Interpolation Ionization mobility Semiconductor device modeling Semiconductor process modeling Silicon carbide silicon carbide (SiC) Simulation TCAD
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