Technique for Iterative Refinement of Parameter Values in Analytical Models of Microelectronic Devices

— The physical models of MOS transistors used in the design of modern integrated circuits are accurate, which makes it possible to simulate their operation with the given degree of reliability, but they are highly complex. Therefore, less accurate but more compact analytical models of transistors and devices based on them are usually used. However, in the calculations and evaluation, the values of the parameters that make up the model equations might not be known in all cases sufficiently accurately. This paper presents a technique for the iterative refinement of parameter values in analytical models that describe devices based on integrated MOS transistors. Using the results of modeling carried out with Cadence EDA with the connection of a precise BSIM4 MOS transistor model, the possibility of the practical application of the proposed technique is shown using the example of a previously developed analytical model of a voltage multiplier. It is found that the use of the parameter refinement technique significantly reduces the errors of models of electronic devices based on integrated MOS transistors.