Radiation Hardened Components of Semicustom Analog Microcircuits
— An MH2XA031 master slice array (basic matrix crystal (BMC)) is applied for designing and semicustom production of analog integrated circuits (ICs) operating in extreme conditions. It can be effectively used only with a clear understanding of the permissible ranges of changes in the parameters of a...
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| Veröffentlicht in: | Russian microelectronics 2023-12, Vol.52 (7), p.599-607 |
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| container_title | Russian microelectronics |
| container_volume | 52 |
| creator | Dvornikov, O. V. Tchekhovsky, V. A. Prokopenko, N. N. Galkin, Ya. D. Kunts, A. V. Chumakov, V. E. |
| description | —
An MH2XA031 master slice array (basic matrix crystal (BMC)) is applied for designing and semicustom production of analog integrated circuits (ICs) operating in extreme conditions. It can be effectively used only with a clear understanding of the permissible ranges of changes in the parameters of analog components when exposed to various types of penetrating radiation. In this study, with the help of circuit simulation, the effect of neutron fluence up to 10
14
neutrons/cm
2
and the absorbed dose of gamma rays up to 3 Mrad on the static parameters of the components of the MH2XA031 circuit design library—an ADComp3 comparator, an OAmp2 low zero offset voltage operational amplifier, an OAmp8 multidifferential operational amplifier, and a charge-sensitive amplifier (CSA) with an input double-gate transistor—is studied. It is established that the ADComp3 comparator, the OAmp2 and OAmp8 amplifiers, and the CSA remain operational at an absorbed dose of gamma rays equal to 3 Mrad. The permissible neutron fluence values for ADComp3, OAmp8, and CSA are 10
14
neutrons/cm
2
; and for OAmp2, 10
13
neutrons/cm
2
. It is established that modeling the radiation changes in the parameters of the components at higher neutron fluences (more than 10
14
neutrons/cm
2
) and the absorbed gamma quanta of more than 3 Mrad is advisable after experimental verification of the adequacy of the transistor models used at the specified levels of penetrating radiation. |
| doi_str_mv | 10.1134/S1063739723070077 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2927437006</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2927437006</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1837-3df37d8c5cdaa7029293ab6350ce93ed17cb61bca9f7bc251c1a0693337265943</originalsourceid><addsrcrecordid>eNp1UE1LAzEQDaJgrf4AbwueV2d2dpPmZilqhYpg9bxkk2xJ6W5qsnvw35tSwYN4moH3wXuPsWuEW0Qq79YInARJURAIACFO2AQ5zHIqsTpNf4LzA37OLmLcAiAA5xN2_6aMU4PzfbZUwdjemmzhu73vbT_EzLfZ2nZOj3HwXTbv1c5vsheng9cu6NEN8ZKdtWoX7dXPnbKPx4f3xTJfvT49L-arXOOMRE6mJWFmutJGKQGFLCSphlMF2kqyBoVuODZayVY0uqhQowIuiUgUvJIlTdnN0Xcf_Odo41Bv_RhSoFgnM1FSas0TC4-slDDGYNt6H1ynwleNUB-Gqv8MlTTFURMTt9_Y8Ov8v-gbiJNpEA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2927437006</pqid></control><display><type>article</type><title>Radiation Hardened Components of Semicustom Analog Microcircuits</title><source>Springer Nature - Complete Springer Journals</source><creator>Dvornikov, O. V. ; Tchekhovsky, V. A. ; Prokopenko, N. N. ; Galkin, Ya. D. ; Kunts, A. V. ; Chumakov, V. E.</creator><creatorcontrib>Dvornikov, O. V. ; Tchekhovsky, V. A. ; Prokopenko, N. N. ; Galkin, Ya. D. ; Kunts, A. V. ; Chumakov, V. E.</creatorcontrib><description>—
An MH2XA031 master slice array (basic matrix crystal (BMC)) is applied for designing and semicustom production of analog integrated circuits (ICs) operating in extreme conditions. It can be effectively used only with a clear understanding of the permissible ranges of changes in the parameters of analog components when exposed to various types of penetrating radiation. In this study, with the help of circuit simulation, the effect of neutron fluence up to 10
14
neutrons/cm
2
and the absorbed dose of gamma rays up to 3 Mrad on the static parameters of the components of the MH2XA031 circuit design library—an ADComp3 comparator, an OAmp2 low zero offset voltage operational amplifier, an OAmp8 multidifferential operational amplifier, and a charge-sensitive amplifier (CSA) with an input double-gate transistor—is studied. It is established that the ADComp3 comparator, the OAmp2 and OAmp8 amplifiers, and the CSA remain operational at an absorbed dose of gamma rays equal to 3 Mrad. The permissible neutron fluence values for ADComp3, OAmp8, and CSA are 10
14
neutrons/cm
2
; and for OAmp2, 10
13
neutrons/cm
2
. It is established that modeling the radiation changes in the parameters of the components at higher neutron fluences (more than 10
14
neutrons/cm
2
) and the absorbed gamma quanta of more than 3 Mrad is advisable after experimental verification of the adequacy of the transistor models used at the specified levels of penetrating radiation.</description><identifier>ISSN: 1063-7397</identifier><identifier>EISSN: 1608-3415</identifier><identifier>DOI: 10.1134/S1063739723070077</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Adequacy ; Analog circuits ; Circuit design ; Comparators ; Electrical Engineering ; Engineering ; Fluence ; Gamma rays ; Integrated circuits ; Mathematical models ; Neutrons ; Operational amplifiers ; Parameters ; Radiation ; Radiation hardening ; Transistors</subject><ispartof>Russian microelectronics, 2023-12, Vol.52 (7), p.599-607</ispartof><rights>Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, No. 7, pp. 599–607. © Pleiades Publishing, Ltd., 2023. Russian Text © The Author(s), 2022, published in Izvestiya Vysshikh Uchebnykh Zavedenii, Elektronika, 2022, Vol. 27, No. 3, pp. 308–321.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1837-3df37d8c5cdaa7029293ab6350ce93ed17cb61bca9f7bc251c1a0693337265943</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063739723070077$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063739723070077$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Dvornikov, O. V.</creatorcontrib><creatorcontrib>Tchekhovsky, V. A.</creatorcontrib><creatorcontrib>Prokopenko, N. N.</creatorcontrib><creatorcontrib>Galkin, Ya. D.</creatorcontrib><creatorcontrib>Kunts, A. V.</creatorcontrib><creatorcontrib>Chumakov, V. E.</creatorcontrib><title>Radiation Hardened Components of Semicustom Analog Microcircuits</title><title>Russian microelectronics</title><addtitle>Russ Microelectron</addtitle><description>—
An MH2XA031 master slice array (basic matrix crystal (BMC)) is applied for designing and semicustom production of analog integrated circuits (ICs) operating in extreme conditions. It can be effectively used only with a clear understanding of the permissible ranges of changes in the parameters of analog components when exposed to various types of penetrating radiation. In this study, with the help of circuit simulation, the effect of neutron fluence up to 10
14
neutrons/cm
2
and the absorbed dose of gamma rays up to 3 Mrad on the static parameters of the components of the MH2XA031 circuit design library—an ADComp3 comparator, an OAmp2 low zero offset voltage operational amplifier, an OAmp8 multidifferential operational amplifier, and a charge-sensitive amplifier (CSA) with an input double-gate transistor—is studied. It is established that the ADComp3 comparator, the OAmp2 and OAmp8 amplifiers, and the CSA remain operational at an absorbed dose of gamma rays equal to 3 Mrad. The permissible neutron fluence values for ADComp3, OAmp8, and CSA are 10
14
neutrons/cm
2
; and for OAmp2, 10
13
neutrons/cm
2
. It is established that modeling the radiation changes in the parameters of the components at higher neutron fluences (more than 10
14
neutrons/cm
2
) and the absorbed gamma quanta of more than 3 Mrad is advisable after experimental verification of the adequacy of the transistor models used at the specified levels of penetrating radiation.</description><subject>Adequacy</subject><subject>Analog circuits</subject><subject>Circuit design</subject><subject>Comparators</subject><subject>Electrical Engineering</subject><subject>Engineering</subject><subject>Fluence</subject><subject>Gamma rays</subject><subject>Integrated circuits</subject><subject>Mathematical models</subject><subject>Neutrons</subject><subject>Operational amplifiers</subject><subject>Parameters</subject><subject>Radiation</subject><subject>Radiation hardening</subject><subject>Transistors</subject><issn>1063-7397</issn><issn>1608-3415</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp1UE1LAzEQDaJgrf4AbwueV2d2dpPmZilqhYpg9bxkk2xJ6W5qsnvw35tSwYN4moH3wXuPsWuEW0Qq79YInARJURAIACFO2AQ5zHIqsTpNf4LzA37OLmLcAiAA5xN2_6aMU4PzfbZUwdjemmzhu73vbT_EzLfZ2nZOj3HwXTbv1c5vsheng9cu6NEN8ZKdtWoX7dXPnbKPx4f3xTJfvT49L-arXOOMRE6mJWFmutJGKQGFLCSphlMF2kqyBoVuODZayVY0uqhQowIuiUgUvJIlTdnN0Xcf_Odo41Bv_RhSoFgnM1FSas0TC4-slDDGYNt6H1ynwleNUB-Gqv8MlTTFURMTt9_Y8Ov8v-gbiJNpEA</recordid><startdate>20231201</startdate><enddate>20231201</enddate><creator>Dvornikov, O. V.</creator><creator>Tchekhovsky, V. A.</creator><creator>Prokopenko, N. N.</creator><creator>Galkin, Ya. D.</creator><creator>Kunts, A. V.</creator><creator>Chumakov, V. E.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20231201</creationdate><title>Radiation Hardened Components of Semicustom Analog Microcircuits</title><author>Dvornikov, O. V. ; Tchekhovsky, V. A. ; Prokopenko, N. N. ; Galkin, Ya. D. ; Kunts, A. V. ; Chumakov, V. E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1837-3df37d8c5cdaa7029293ab6350ce93ed17cb61bca9f7bc251c1a0693337265943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Adequacy</topic><topic>Analog circuits</topic><topic>Circuit design</topic><topic>Comparators</topic><topic>Electrical Engineering</topic><topic>Engineering</topic><topic>Fluence</topic><topic>Gamma rays</topic><topic>Integrated circuits</topic><topic>Mathematical models</topic><topic>Neutrons</topic><topic>Operational amplifiers</topic><topic>Parameters</topic><topic>Radiation</topic><topic>Radiation hardening</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dvornikov, O. V.</creatorcontrib><creatorcontrib>Tchekhovsky, V. A.</creatorcontrib><creatorcontrib>Prokopenko, N. N.</creatorcontrib><creatorcontrib>Galkin, Ya. D.</creatorcontrib><creatorcontrib>Kunts, A. V.</creatorcontrib><creatorcontrib>Chumakov, V. E.</creatorcontrib><collection>CrossRef</collection><jtitle>Russian microelectronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dvornikov, O. V.</au><au>Tchekhovsky, V. A.</au><au>Prokopenko, N. N.</au><au>Galkin, Ya. D.</au><au>Kunts, A. V.</au><au>Chumakov, V. E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Radiation Hardened Components of Semicustom Analog Microcircuits</atitle><jtitle>Russian microelectronics</jtitle><stitle>Russ Microelectron</stitle><date>2023-12-01</date><risdate>2023</risdate><volume>52</volume><issue>7</issue><spage>599</spage><epage>607</epage><pages>599-607</pages><issn>1063-7397</issn><eissn>1608-3415</eissn><abstract>—
An MH2XA031 master slice array (basic matrix crystal (BMC)) is applied for designing and semicustom production of analog integrated circuits (ICs) operating in extreme conditions. It can be effectively used only with a clear understanding of the permissible ranges of changes in the parameters of analog components when exposed to various types of penetrating radiation. In this study, with the help of circuit simulation, the effect of neutron fluence up to 10
14
neutrons/cm
2
and the absorbed dose of gamma rays up to 3 Mrad on the static parameters of the components of the MH2XA031 circuit design library—an ADComp3 comparator, an OAmp2 low zero offset voltage operational amplifier, an OAmp8 multidifferential operational amplifier, and a charge-sensitive amplifier (CSA) with an input double-gate transistor—is studied. It is established that the ADComp3 comparator, the OAmp2 and OAmp8 amplifiers, and the CSA remain operational at an absorbed dose of gamma rays equal to 3 Mrad. The permissible neutron fluence values for ADComp3, OAmp8, and CSA are 10
14
neutrons/cm
2
; and for OAmp2, 10
13
neutrons/cm
2
. It is established that modeling the radiation changes in the parameters of the components at higher neutron fluences (more than 10
14
neutrons/cm
2
) and the absorbed gamma quanta of more than 3 Mrad is advisable after experimental verification of the adequacy of the transistor models used at the specified levels of penetrating radiation.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063739723070077</doi><tpages>9</tpages></addata></record> |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Adequacy Analog circuits Circuit design Comparators Electrical Engineering Engineering Fluence Gamma rays Integrated circuits Mathematical models Neutrons Operational amplifiers Parameters Radiation Radiation hardening Transistors |
| title | Radiation Hardened Components of Semicustom Analog Microcircuits |
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