Design and Testing of Isolated Gate Driver for Cryogenic Environments
Aiming to increase the power density of electrical systems and realize all-electric aircraft, research has been focused on immersing power electronics at cryogenic temperatures as they tend to have lower conduction and switching losses. To ensure proper switching of semiconductor devices at cryogeni...
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Veröffentlicht in: | IEEE transactions on applied superconductivity 2024-05, Vol.34 (3), p.1-4 |
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container_title | IEEE transactions on applied superconductivity |
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creator | Elwakeel, Abdelrahman McNeill, Neville Alzola, Rafael Pena Surapaneni, Ravi Kiran Galla, Gowtham Ybanez, Ludovic Zhang, Min Yuan, Weijia |
description | Aiming to increase the power density of electrical systems and realize all-electric aircraft, research has been focused on immersing power electronics at cryogenic temperatures as they tend to have lower conduction and switching losses. To ensure proper switching of semiconductor devices at cryogenic temperature, their gate driver circuits should ideally be placed in close physical proximity and therefore in the same environment. Although some commercial off-the-shelf gate drivers have been tested at cryogenic temperatures, in this article we present a bespoke magnetically isolated gate driver for cryogenic temperatures. Experiments with the circuit immersed in liquid nitrogen verify the proposals of the article. |
doi_str_mv | 10.1109/TASC.2024.3356496 |
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fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_2926269331</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10411022</ieee_id><sourcerecordid>2926269331</sourcerecordid><originalsourceid>FETCH-LOGICAL-c294t-d0531847a0c13dc53a94a4e4cb12e7921f971792a68a83cca0d3e8b9e4cdd5aa3</originalsourceid><addsrcrecordid>eNpNkMtqAjEUhkNpodb2AQpdBLoem5PLmCxltFYQuqhdh5jJSEQTm4yCb9-IXXRz_rP4zoUPoWcgIwCi3laTr2ZECeUjxkTNVX2DBiCErKgAcVt6IqCSlLJ79JDzlhDgkosBmk1d9puATWjxyuXehw2OHV7kuDO9a_G8VDxN_uQS7mLCTTrHjQve4lk4-RTD3oU-P6K7zuyye_rLIfp-n62aj2r5OV80k2VlqeJ91RLBQPKxIRZYawUzihvuuF0DdWNFoVNjKGlqaSSz1pCWOblWhWhbYQwbotfr3kOKP8fyrt7GYwrlpKaK1rRWjEGh4ErZFHNOrtOH5PcmnTUQfbGlL7b0xZb-s1VmXq4z3jn3j-eFL9Z-AdbsZWQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2926269331</pqid></control><display><type>article</type><title>Design and Testing of Isolated Gate Driver for Cryogenic Environments</title><source>IEEE Electronic Library (IEL)</source><creator>Elwakeel, Abdelrahman ; McNeill, Neville ; Alzola, Rafael Pena ; Surapaneni, Ravi Kiran ; Galla, Gowtham ; Ybanez, Ludovic ; Zhang, Min ; Yuan, Weijia</creator><creatorcontrib>Elwakeel, Abdelrahman ; McNeill, Neville ; Alzola, Rafael Pena ; Surapaneni, Ravi Kiran ; Galla, Gowtham ; Ybanez, Ludovic ; Zhang, Min ; Yuan, Weijia</creatorcontrib><description>Aiming to increase the power density of electrical systems and realize all-electric aircraft, research has been focused on immersing power electronics at cryogenic temperatures as they tend to have lower conduction and switching losses. To ensure proper switching of semiconductor devices at cryogenic temperature, their gate driver circuits should ideally be placed in close physical proximity and therefore in the same environment. Although some commercial off-the-shelf gate drivers have been tested at cryogenic temperatures, in this article we present a bespoke magnetically isolated gate driver for cryogenic temperatures. Experiments with the circuit immersed in liquid nitrogen verify the proposals of the article.</description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/TASC.2024.3356496</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitors ; Cryogenic electronics ; Cryogenic temperature ; Cryogenics ; Driver circuits ; Fly by wire control ; gate driver ; Gate drivers ; Gates (circuits) ; IGBT ; Integrated circuits ; Liquid nitrogen ; MOSFET ; Power supplies ; propulsion ; Semiconductor devices ; Superconducting magnets ; Switching ; Voltage control</subject><ispartof>IEEE transactions on applied superconductivity, 2024-05, Vol.34 (3), p.1-4</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c294t-d0531847a0c13dc53a94a4e4cb12e7921f971792a68a83cca0d3e8b9e4cdd5aa3</citedby><cites>FETCH-LOGICAL-c294t-d0531847a0c13dc53a94a4e4cb12e7921f971792a68a83cca0d3e8b9e4cdd5aa3</cites><orcidid>0000-0002-7953-4704 ; 0000-0003-4296-7730 ; 0009-0009-7067-4207 ; 0000-0001-7918-9480 ; 0000-0002-2451-6779 ; 0000-0001-8277-6387</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10411022$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10411022$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Elwakeel, Abdelrahman</creatorcontrib><creatorcontrib>McNeill, Neville</creatorcontrib><creatorcontrib>Alzola, Rafael Pena</creatorcontrib><creatorcontrib>Surapaneni, Ravi Kiran</creatorcontrib><creatorcontrib>Galla, Gowtham</creatorcontrib><creatorcontrib>Ybanez, Ludovic</creatorcontrib><creatorcontrib>Zhang, Min</creatorcontrib><creatorcontrib>Yuan, Weijia</creatorcontrib><title>Design and Testing of Isolated Gate Driver for Cryogenic Environments</title><title>IEEE transactions on applied superconductivity</title><addtitle>TASC</addtitle><description>Aiming to increase the power density of electrical systems and realize all-electric aircraft, research has been focused on immersing power electronics at cryogenic temperatures as they tend to have lower conduction and switching losses. To ensure proper switching of semiconductor devices at cryogenic temperature, their gate driver circuits should ideally be placed in close physical proximity and therefore in the same environment. Although some commercial off-the-shelf gate drivers have been tested at cryogenic temperatures, in this article we present a bespoke magnetically isolated gate driver for cryogenic temperatures. Experiments with the circuit immersed in liquid nitrogen verify the proposals of the article.</description><subject>Capacitors</subject><subject>Cryogenic electronics</subject><subject>Cryogenic temperature</subject><subject>Cryogenics</subject><subject>Driver circuits</subject><subject>Fly by wire control</subject><subject>gate driver</subject><subject>Gate drivers</subject><subject>Gates (circuits)</subject><subject>IGBT</subject><subject>Integrated circuits</subject><subject>Liquid nitrogen</subject><subject>MOSFET</subject><subject>Power supplies</subject><subject>propulsion</subject><subject>Semiconductor devices</subject><subject>Superconducting magnets</subject><subject>Switching</subject><subject>Voltage control</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkMtqAjEUhkNpodb2AQpdBLoem5PLmCxltFYQuqhdh5jJSEQTm4yCb9-IXXRz_rP4zoUPoWcgIwCi3laTr2ZECeUjxkTNVX2DBiCErKgAcVt6IqCSlLJ79JDzlhDgkosBmk1d9puATWjxyuXehw2OHV7kuDO9a_G8VDxN_uQS7mLCTTrHjQve4lk4-RTD3oU-P6K7zuyye_rLIfp-n62aj2r5OV80k2VlqeJ91RLBQPKxIRZYawUzihvuuF0DdWNFoVNjKGlqaSSz1pCWOblWhWhbYQwbotfr3kOKP8fyrt7GYwrlpKaK1rRWjEGh4ErZFHNOrtOH5PcmnTUQfbGlL7b0xZb-s1VmXq4z3jn3j-eFL9Z-AdbsZWQ</recordid><startdate>20240501</startdate><enddate>20240501</enddate><creator>Elwakeel, Abdelrahman</creator><creator>McNeill, Neville</creator><creator>Alzola, Rafael Pena</creator><creator>Surapaneni, Ravi Kiran</creator><creator>Galla, Gowtham</creator><creator>Ybanez, Ludovic</creator><creator>Zhang, Min</creator><creator>Yuan, Weijia</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-7953-4704</orcidid><orcidid>https://orcid.org/0000-0003-4296-7730</orcidid><orcidid>https://orcid.org/0009-0009-7067-4207</orcidid><orcidid>https://orcid.org/0000-0001-7918-9480</orcidid><orcidid>https://orcid.org/0000-0002-2451-6779</orcidid><orcidid>https://orcid.org/0000-0001-8277-6387</orcidid></search><sort><creationdate>20240501</creationdate><title>Design and Testing of Isolated Gate Driver for Cryogenic Environments</title><author>Elwakeel, Abdelrahman ; McNeill, Neville ; Alzola, Rafael Pena ; Surapaneni, Ravi Kiran ; Galla, Gowtham ; Ybanez, Ludovic ; Zhang, Min ; Yuan, Weijia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c294t-d0531847a0c13dc53a94a4e4cb12e7921f971792a68a83cca0d3e8b9e4cdd5aa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Capacitors</topic><topic>Cryogenic electronics</topic><topic>Cryogenic temperature</topic><topic>Cryogenics</topic><topic>Driver circuits</topic><topic>Fly by wire control</topic><topic>gate driver</topic><topic>Gate drivers</topic><topic>Gates (circuits)</topic><topic>IGBT</topic><topic>Integrated circuits</topic><topic>Liquid nitrogen</topic><topic>MOSFET</topic><topic>Power supplies</topic><topic>propulsion</topic><topic>Semiconductor devices</topic><topic>Superconducting magnets</topic><topic>Switching</topic><topic>Voltage control</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Elwakeel, Abdelrahman</creatorcontrib><creatorcontrib>McNeill, Neville</creatorcontrib><creatorcontrib>Alzola, Rafael Pena</creatorcontrib><creatorcontrib>Surapaneni, Ravi Kiran</creatorcontrib><creatorcontrib>Galla, Gowtham</creatorcontrib><creatorcontrib>Ybanez, Ludovic</creatorcontrib><creatorcontrib>Zhang, Min</creatorcontrib><creatorcontrib>Yuan, Weijia</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Elwakeel, Abdelrahman</au><au>McNeill, Neville</au><au>Alzola, Rafael Pena</au><au>Surapaneni, Ravi Kiran</au><au>Galla, Gowtham</au><au>Ybanez, Ludovic</au><au>Zhang, Min</au><au>Yuan, Weijia</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design and Testing of Isolated Gate Driver for Cryogenic Environments</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>2024-05-01</date><risdate>2024</risdate><volume>34</volume><issue>3</issue><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>Aiming to increase the power density of electrical systems and realize all-electric aircraft, research has been focused on immersing power electronics at cryogenic temperatures as they tend to have lower conduction and switching losses. To ensure proper switching of semiconductor devices at cryogenic temperature, their gate driver circuits should ideally be placed in close physical proximity and therefore in the same environment. Although some commercial off-the-shelf gate drivers have been tested at cryogenic temperatures, in this article we present a bespoke magnetically isolated gate driver for cryogenic temperatures. Experiments with the circuit immersed in liquid nitrogen verify the proposals of the article.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TASC.2024.3356496</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-7953-4704</orcidid><orcidid>https://orcid.org/0000-0003-4296-7730</orcidid><orcidid>https://orcid.org/0009-0009-7067-4207</orcidid><orcidid>https://orcid.org/0000-0001-7918-9480</orcidid><orcidid>https://orcid.org/0000-0002-2451-6779</orcidid><orcidid>https://orcid.org/0000-0001-8277-6387</orcidid></addata></record> |
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subjects | Capacitors Cryogenic electronics Cryogenic temperature Cryogenics Driver circuits Fly by wire control gate driver Gate drivers Gates (circuits) IGBT Integrated circuits Liquid nitrogen MOSFET Power supplies propulsion Semiconductor devices Superconducting magnets Switching Voltage control |
title | Design and Testing of Isolated Gate Driver for Cryogenic Environments |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T12%3A40%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Design%20and%20Testing%20of%20Isolated%20Gate%20Driver%20for%20Cryogenic%20Environments&rft.jtitle=IEEE%20transactions%20on%20applied%20superconductivity&rft.au=Elwakeel,%20Abdelrahman&rft.date=2024-05-01&rft.volume=34&rft.issue=3&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.issn=1051-8223&rft.eissn=1558-2515&rft.coden=ITASE9&rft_id=info:doi/10.1109/TASC.2024.3356496&rft_dat=%3Cproquest_RIE%3E2926269331%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2926269331&rft_id=info:pmid/&rft_ieee_id=10411022&rfr_iscdi=true |