Thermogravimetric study of metal–organic precursors and their suitability for hybrid molecular beam epitaxy

Although metal–organic (MO) precursors are widely used in technologically relevant deposition techniques, reports on their temperature-dependent evaporation and decomposition behaviors are scarce. Here, MO precursors of the metals Ti, V, Al, Hf, Zr, Ge, Ta, and Pt were subjected to thermogravimetric...

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Veröffentlicht in:Journal of materials research 2024-02, Vol.39 (3), p.436-448
Hauptverfasser: Fazlioglu-Yalcin, Benazir, Hilse, Maria, Engel-Herbert, Roman
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creator Fazlioglu-Yalcin, Benazir
Hilse, Maria
Engel-Herbert, Roman
description Although metal–organic (MO) precursors are widely used in technologically relevant deposition techniques, reports on their temperature-dependent evaporation and decomposition behaviors are scarce. Here, MO precursors of the metals Ti, V, Al, Hf, Zr, Ge, Ta, and Pt were subjected to thermogravimetric analysis to experimentally determine their vapor pressure curves and to gain insight into their temperature-dependent decomposition kinetics. Benzoic acid was used as a calibration standard and vapor pressure curves were extracted from thermogravimetric measurements using the Langmuir equation. The obtained data is used to discuss the suitability of these MO precursors in chemical vapor deposition-based thin film growth approaches in general, and hybrid molecular beam epitaxy in particular. All MOs, except for Ta- and one Ti-based MOs, were deemed suitable for gas inlet systems. The Ta-based MO demonstrated suitability for an effusion cell, while all MOs showed compatibility with cracker usage. Graphical Abstract
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Here, MO precursors of the metals Ti, V, Al, Hf, Zr, Ge, Ta, and Pt were subjected to thermogravimetric analysis to experimentally determine their vapor pressure curves and to gain insight into their temperature-dependent decomposition kinetics. Benzoic acid was used as a calibration standard and vapor pressure curves were extracted from thermogravimetric measurements using the Langmuir equation. The obtained data is used to discuss the suitability of these MO precursors in chemical vapor deposition-based thin film growth approaches in general, and hybrid molecular beam epitaxy in particular. All MOs, except for Ta- and one Ti-based MOs, were deemed suitable for gas inlet systems. The Ta-based MO demonstrated suitability for an effusion cell, while all MOs showed compatibility with cracker usage. 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subjects Applied and Technical Physics
Benzoic acid
Biomaterials
Chemical vapor deposition
Chemistry and Materials Science
Decomposition
Epitaxial growth
Film growth
Germanium
Inorganic Chemistry
Materials Engineering
Materials Science
Molecular beam epitaxy
Nanotechnology
Precursors
Tantalum
Temperature dependence
Thermogravimetric analysis
Thin films
Titanium
Vapor pressure
Zirconium
title Thermogravimetric study of metal–organic precursors and their suitability for hybrid molecular beam epitaxy
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