Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector
Quasi-2D thin film of TI material TlBiSe 2 , as well as TlBiSe2/GaN configuration, have been fabricated employing the thermal evaporation technique. Raman peaks of vibrational modes were analyzed in a TlBiSe 2 /GaN heterojunction showing a substrate-induced signal for the surface phonon mode (SPM)....
Gespeichert in:
| Veröffentlicht in: | Journal of electronic materials 2024-03, Vol.53 (3), p.1561-1576 |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1576 |
|---|---|
| container_issue | 3 |
| container_start_page | 1561 |
| container_title | Journal of electronic materials |
| container_volume | 53 |
| creator | Maurya, Gyanendra Kumar Gautam, Vidushi Ahmad, Faizan Singh, Roshani Verma, Sandeep Kandpal, Kavindra Kumar, Rachana Kumar, Mahesh Tiwari, Akhilesh Kumar, Pramod |
| description | Quasi-2D thin film of TI material TlBiSe
2
, as well as TlBiSe2/GaN configuration, have been fabricated employing the thermal evaporation technique. Raman peaks of vibrational modes were analyzed in a TlBiSe
2
/GaN heterojunction showing a substrate-induced signal for the surface phonon mode (SPM). The study of ultrafast kinetics of charge carriers and transient absorption spectroscopy (TAS) gave excited-state spectrum characteristics and exciton dynamics in TlBiSe
2
/GaN heterojunction. The electrical characterization showed that the heterojunction device exhibited a good diode nature with an excellent rectification ratio of 160. The photodetection capabilities were examined by optical power varying from 2.37
µ
W to 3.78
µ
W in the ultraviolet to near-infrared region (300–900 nm). It demonstrated maximum photoresponse at 500 nm in forward and reverse bias. The current conduction mechanism and enhancement in current under light impact were explained using energy band modeling. The present work is important in regarding the development of photodetectors of succeeding generations with a topological insulator material. |
| doi_str_mv | 10.1007/s11664-023-10889-7 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2921361799</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2921361799</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-1f392330bf478975439b96af1a95c25c4698fa017e9d29266f95a0ebac07ef2f3</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKt_wFPA89p87FeO1o-2UKpoW7yF7O6k3bJuapIVPPnXjV3Bm6dhmOedYR6ELim5poRkI0dpmsYRYTyiJM9FlB2hAU3i0Obp6zEaEJ7SKGE8OUVnzu0IoQnN6QB9Lc3eNGZTl6rBs9Z1jfLG4mUzrl-AjSZqgddg_WE8BQ_W7Lq29LVp8V1tKsA60NN6s8XP4PamdfUH4LE1qipUW-HVGnuDF6BsNGu1VRYq_LQ1PiQ9lOHSOTrRqnFw8VuHaPVwv7ydRvPHyez2Zh6VnAofUc0F45wUOs5ykYXHRCFSpakSScmSMk5FrhWhGYiKCZamWiSKQKFKkoFmmg_RVb93b817B87LnelsG07KwNNgJxMiUKynSmucs6Dl3tZvyn5KSuSPaNmLlkG0PIiWWQjxPuQC3G7A_q3-J_UNhKKBpQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2921361799</pqid></control><display><type>article</type><title>Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector</title><source>SpringerNature Journals</source><creator>Maurya, Gyanendra Kumar ; Gautam, Vidushi ; Ahmad, Faizan ; Singh, Roshani ; Verma, Sandeep ; Kandpal, Kavindra ; Kumar, Rachana ; Kumar, Mahesh ; Tiwari, Akhilesh ; Kumar, Pramod</creator><creatorcontrib>Maurya, Gyanendra Kumar ; Gautam, Vidushi ; Ahmad, Faizan ; Singh, Roshani ; Verma, Sandeep ; Kandpal, Kavindra ; Kumar, Rachana ; Kumar, Mahesh ; Tiwari, Akhilesh ; Kumar, Pramod</creatorcontrib><description>Quasi-2D thin film of TI material TlBiSe
2
, as well as TlBiSe2/GaN configuration, have been fabricated employing the thermal evaporation technique. Raman peaks of vibrational modes were analyzed in a TlBiSe
2
/GaN heterojunction showing a substrate-induced signal for the surface phonon mode (SPM). The study of ultrafast kinetics of charge carriers and transient absorption spectroscopy (TAS) gave excited-state spectrum characteristics and exciton dynamics in TlBiSe
2
/GaN heterojunction. The electrical characterization showed that the heterojunction device exhibited a good diode nature with an excellent rectification ratio of 160. The photodetection capabilities were examined by optical power varying from 2.37
µ
W to 3.78
µ
W in the ultraviolet to near-infrared region (300–900 nm). It demonstrated maximum photoresponse at 500 nm in forward and reverse bias. The current conduction mechanism and enhancement in current under light impact were explained using energy band modeling. The present work is important in regarding the development of photodetectors of succeeding generations with a topological insulator material.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-023-10889-7</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Absorption spectroscopy ; Broadband ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Current carriers ; Electrical properties ; Electronics and Microelectronics ; Energy bands ; Excitation spectra ; Excitons ; Gallium nitrides ; Heterojunction devices ; Information technology ; Infrared detectors ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Original Research Article ; Phase transitions ; Photometers ; Quantum computing ; Semiconductors ; Solid State Physics ; Spectrum analysis ; Substrates ; Thin films ; Topological insulators ; Vibration mode</subject><ispartof>Journal of electronic materials, 2024-03, Vol.53 (3), p.1561-1576</ispartof><rights>The Minerals, Metals & Materials Society 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-1f392330bf478975439b96af1a95c25c4698fa017e9d29266f95a0ebac07ef2f3</citedby><cites>FETCH-LOGICAL-c319t-1f392330bf478975439b96af1a95c25c4698fa017e9d29266f95a0ebac07ef2f3</cites><orcidid>0000-0003-1617-3232</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-023-10889-7$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-023-10889-7$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Maurya, Gyanendra Kumar</creatorcontrib><creatorcontrib>Gautam, Vidushi</creatorcontrib><creatorcontrib>Ahmad, Faizan</creatorcontrib><creatorcontrib>Singh, Roshani</creatorcontrib><creatorcontrib>Verma, Sandeep</creatorcontrib><creatorcontrib>Kandpal, Kavindra</creatorcontrib><creatorcontrib>Kumar, Rachana</creatorcontrib><creatorcontrib>Kumar, Mahesh</creatorcontrib><creatorcontrib>Tiwari, Akhilesh</creatorcontrib><creatorcontrib>Kumar, Pramod</creatorcontrib><title>Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector</title><title>Journal of electronic materials</title><addtitle>J. Electron. Mater</addtitle><description>Quasi-2D thin film of TI material TlBiSe
2
, as well as TlBiSe2/GaN configuration, have been fabricated employing the thermal evaporation technique. Raman peaks of vibrational modes were analyzed in a TlBiSe
2
/GaN heterojunction showing a substrate-induced signal for the surface phonon mode (SPM). The study of ultrafast kinetics of charge carriers and transient absorption spectroscopy (TAS) gave excited-state spectrum characteristics and exciton dynamics in TlBiSe
2
/GaN heterojunction. The electrical characterization showed that the heterojunction device exhibited a good diode nature with an excellent rectification ratio of 160. The photodetection capabilities were examined by optical power varying from 2.37
µ
W to 3.78
µ
W in the ultraviolet to near-infrared region (300–900 nm). It demonstrated maximum photoresponse at 500 nm in forward and reverse bias. The current conduction mechanism and enhancement in current under light impact were explained using energy band modeling. The present work is important in regarding the development of photodetectors of succeeding generations with a topological insulator material.</description><subject>Absorption spectroscopy</subject><subject>Broadband</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Current carriers</subject><subject>Electrical properties</subject><subject>Electronics and Microelectronics</subject><subject>Energy bands</subject><subject>Excitation spectra</subject><subject>Excitons</subject><subject>Gallium nitrides</subject><subject>Heterojunction devices</subject><subject>Information technology</subject><subject>Infrared detectors</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Original Research Article</subject><subject>Phase transitions</subject><subject>Photometers</subject><subject>Quantum computing</subject><subject>Semiconductors</subject><subject>Solid State Physics</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Topological insulators</subject><subject>Vibration mode</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKt_wFPA89p87FeO1o-2UKpoW7yF7O6k3bJuapIVPPnXjV3Bm6dhmOedYR6ELim5poRkI0dpmsYRYTyiJM9FlB2hAU3i0Obp6zEaEJ7SKGE8OUVnzu0IoQnN6QB9Lc3eNGZTl6rBs9Z1jfLG4mUzrl-AjSZqgddg_WE8BQ_W7Lq29LVp8V1tKsA60NN6s8XP4PamdfUH4LE1qipUW-HVGnuDF6BsNGu1VRYq_LQ1PiQ9lOHSOTrRqnFw8VuHaPVwv7ydRvPHyez2Zh6VnAofUc0F45wUOs5ykYXHRCFSpakSScmSMk5FrhWhGYiKCZamWiSKQKFKkoFmmg_RVb93b817B87LnelsG07KwNNgJxMiUKynSmucs6Dl3tZvyn5KSuSPaNmLlkG0PIiWWQjxPuQC3G7A_q3-J_UNhKKBpQ</recordid><startdate>20240301</startdate><enddate>20240301</enddate><creator>Maurya, Gyanendra Kumar</creator><creator>Gautam, Vidushi</creator><creator>Ahmad, Faizan</creator><creator>Singh, Roshani</creator><creator>Verma, Sandeep</creator><creator>Kandpal, Kavindra</creator><creator>Kumar, Rachana</creator><creator>Kumar, Mahesh</creator><creator>Tiwari, Akhilesh</creator><creator>Kumar, Pramod</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-1617-3232</orcidid></search><sort><creationdate>20240301</creationdate><title>Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector</title><author>Maurya, Gyanendra Kumar ; Gautam, Vidushi ; Ahmad, Faizan ; Singh, Roshani ; Verma, Sandeep ; Kandpal, Kavindra ; Kumar, Rachana ; Kumar, Mahesh ; Tiwari, Akhilesh ; Kumar, Pramod</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-1f392330bf478975439b96af1a95c25c4698fa017e9d29266f95a0ebac07ef2f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Absorption spectroscopy</topic><topic>Broadband</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Current carriers</topic><topic>Electrical properties</topic><topic>Electronics and Microelectronics</topic><topic>Energy bands</topic><topic>Excitation spectra</topic><topic>Excitons</topic><topic>Gallium nitrides</topic><topic>Heterojunction devices</topic><topic>Information technology</topic><topic>Infrared detectors</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Original Research Article</topic><topic>Phase transitions</topic><topic>Photometers</topic><topic>Quantum computing</topic><topic>Semiconductors</topic><topic>Solid State Physics</topic><topic>Spectrum analysis</topic><topic>Substrates</topic><topic>Thin films</topic><topic>Topological insulators</topic><topic>Vibration mode</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Maurya, Gyanendra Kumar</creatorcontrib><creatorcontrib>Gautam, Vidushi</creatorcontrib><creatorcontrib>Ahmad, Faizan</creatorcontrib><creatorcontrib>Singh, Roshani</creatorcontrib><creatorcontrib>Verma, Sandeep</creatorcontrib><creatorcontrib>Kandpal, Kavindra</creatorcontrib><creatorcontrib>Kumar, Rachana</creatorcontrib><creatorcontrib>Kumar, Mahesh</creatorcontrib><creatorcontrib>Tiwari, Akhilesh</creatorcontrib><creatorcontrib>Kumar, Pramod</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Maurya, Gyanendra Kumar</au><au>Gautam, Vidushi</au><au>Ahmad, Faizan</au><au>Singh, Roshani</au><au>Verma, Sandeep</au><au>Kandpal, Kavindra</au><au>Kumar, Rachana</au><au>Kumar, Mahesh</au><au>Tiwari, Akhilesh</au><au>Kumar, Pramod</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector</atitle><jtitle>Journal of electronic materials</jtitle><stitle>J. Electron. Mater</stitle><date>2024-03-01</date><risdate>2024</risdate><volume>53</volume><issue>3</issue><spage>1561</spage><epage>1576</epage><pages>1561-1576</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>Quasi-2D thin film of TI material TlBiSe
2
, as well as TlBiSe2/GaN configuration, have been fabricated employing the thermal evaporation technique. Raman peaks of vibrational modes were analyzed in a TlBiSe
2
/GaN heterojunction showing a substrate-induced signal for the surface phonon mode (SPM). The study of ultrafast kinetics of charge carriers and transient absorption spectroscopy (TAS) gave excited-state spectrum characteristics and exciton dynamics in TlBiSe
2
/GaN heterojunction. The electrical characterization showed that the heterojunction device exhibited a good diode nature with an excellent rectification ratio of 160. The photodetection capabilities were examined by optical power varying from 2.37
µ
W to 3.78
µ
W in the ultraviolet to near-infrared region (300–900 nm). It demonstrated maximum photoresponse at 500 nm in forward and reverse bias. The current conduction mechanism and enhancement in current under light impact were explained using energy band modeling. The present work is important in regarding the development of photodetectors of succeeding generations with a topological insulator material.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-023-10889-7</doi><tpages>16</tpages><orcidid>https://orcid.org/0000-0003-1617-3232</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 2024-03, Vol.53 (3), p.1561-1576 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_proquest_journals_2921361799 |
| source | SpringerNature Journals |
| subjects | Absorption spectroscopy Broadband Characterization and Evaluation of Materials Chemistry and Materials Science Current carriers Electrical properties Electronics and Microelectronics Energy bands Excitation spectra Excitons Gallium nitrides Heterojunction devices Information technology Infrared detectors Instrumentation Materials Science Optical and Electronic Materials Original Research Article Phase transitions Photometers Quantum computing Semiconductors Solid State Physics Spectrum analysis Substrates Thin films Topological insulators Vibration mode |
| title | Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T02%3A59%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Topological%20Insulator%20TlBiSe2/GaN%20Vertical%20Heterojunction%20Diode%20for%20High%20Responsive%20Broadband%20UV%20to%20Near-Infrared%20Photodetector&rft.jtitle=Journal%20of%20electronic%20materials&rft.au=Maurya,%20Gyanendra%20Kumar&rft.date=2024-03-01&rft.volume=53&rft.issue=3&rft.spage=1561&rft.epage=1576&rft.pages=1561-1576&rft.issn=0361-5235&rft.eissn=1543-186X&rft_id=info:doi/10.1007/s11664-023-10889-7&rft_dat=%3Cproquest_cross%3E2921361799%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2921361799&rft_id=info:pmid/&rfr_iscdi=true |