Electrochemical Impedance Study of Porous Silicon Prepared by Metal-Assisted Chemical Etching

Covering with thin metal facilitates the etching of p-type silicon in a solution of HF containing KBrO 3 , KIO 3 or K 2 S 2 O 8 as an oxidizing agent. Electroless deposition of Ag, Pd or Au was carried out on p-type Si (100) surface before immersion in the etchant solution. The properties of the for...

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Veröffentlicht in:	SILICON 2019-12, Vol.11 (6), p.2837-2844
Hauptverfasser:	Mogoda, A. S., Ahmad, Y. H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aqueous solutions Chemical etching Chemistry Chemistry and Materials Science Electrochemical impedance spectroscopy Electroless deposition Electroless plating Environmental Chemistry Equivalent circuits Etchants Etching Gold Inorganic Chemistry Lasers Materials Science Microscopy Nanowires Optical Devices Optics Original Paper Oxidizing agents Palladium Photonics Polymer Sciences Porous silicon Potassium bromate Potassium persulfate Silicon Silver
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